RN2Z SILICON RECTIFIER DIODE Forward Current – 2.0 Ampere Features • For pulse rectification applications Mechanical Data • Case: Resin molded Absolute Maximum Ratings and Characteristics Symbols Rating Units Transient Peak Reverse Voltage VRSM 200 V Peak Reverse Voltage VRM 200 V IF(AV) 2 A IFSM 70 A Junction Temperature Tj -40 to +150 O Storage Temperature Range TS -40 to +150 O Symbol Value(max.) Unit VF 0.92 V IR 50 µA HIR 4 mA Trr-1 100 nS Trr-2 50 nS θj-1 12 Average Forward Current O at TC = 125 C Peak Surge Forward Current 10mS Single Half Sine C C Characteristics ( Ta=25oC,unless otherwise specified ) Forward Voltage Drop at IF=2A Reverse Leakage Current at VR=VRM Reverse Leakage Current Under High Temperature o at VR=VRM,, Tj=150 C Reverse Recovery Time, Recovery point 90% at IF=IRP=100mA Reverse Recovery Time, Recovery point 75% at IF=100Ma,IRP=200mA Thermal Resistance Between Junction and Lead O C/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2003