CYPRESS CY62167DV30L

CY62167DV30
MoBL
16-Mbit (1M x 16) Static RAM
Features
reduces power consumption by 99% when addresses are not
toggling. The device can also be put into standby mode when
deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are
HIGH). The input/output pins (I/O0 through I/O15) are placed
in a high-impedance state when: deselected (CE1HIGH or CE2
LOW), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a Write operation (CE1 LOW, CE2 HIGH and WE
LOW).
• Very high speed: 55 ns
• Wide voltage range: 2.20V – 3.60V
• Ultra-low active power
— Typical active current: 2 mA @ f = 1 MHz
— Typical active current: 15 mA @ f = fmax
• Ultra-low standby power
Writing to the device is accomplished by taking Chip Enables
(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0
through I/O7), is written into the location specified on the
address pins (A0 through A19). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8 through I/O15) is written into
the location specified on the address pins (A0 through A19).
• Easy memory expansion with CE1, CE2, and OE
features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball BGA and 48-pin TSOPI
Functional Description[1]
The CY62167DV30 is a high-performance CMOS static RAM
organized as 1M words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life (MoBL) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
1M × 16
RAM Array
SENSE AMPS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
ROW DECODER
Logic Block Diagram
Reading from the device is accomplished by taking Chip
Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE)
LOW while forcing the Write Enable (WE) HIGH. If Byte Low
Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory will appear
on I/O8 to I/O15. See the truth table at the back of this data
sheet for a complete description of Read and Write modes.
I/O0 – I/O7
I/O8 – I/O15
COLUMN DECODER
A11
A12
A13
A14
A15
A16
A17
A18
A19
BHE
WE
CE2
CE1
OE
BLE
Power-down
Circuit
CE2
BHE
BLE
CE1
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05328 Rev. *E
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised June 21, 2004
CY62167DV30
MoBL
Pin Configuration[2, 3, 4, 5]
FBGA
Top View
1
2
3
4
5
6
BLE
OE
A0
A1
A2
CE2
A
I/O8
BHE
A3
A4
CE1
I/O0
B
I/O9
I/O10
A5
A6
I/O1
I/O2
C
VSS
I/O11
A17
A7
I/O3
Vcc
D
VCC
I/O12 DNU
A16
I/O4
Vss
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
A19
A12
A13
WE
I/O7
G
A18
A8
A9
A10
A11
DNU
H
48TSOPI (Forward)
Top View
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
DNU
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
Vss
I/O15/A20
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
Vcc
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
Vss
CE1
A0
Notes:
2. NC pins are not connected on the die.
3. DNU pins have to be left floating.
4. The BYTE pin in the 48-TSOPI package has to be tied HIGH to use the device as a 1M × 16 SRAM. The 48-TSOPI package can also be used as a 2M × 8 SRAM
by tying the BYTE signal LOW. For 2M × 8 Functionality, please refer to the CY62168DV30 datasheet. In the 2M × 8 configuration, Pin 45 is A20.
5. Ball H6 for the FBGA package can be used to upgrade to a 32M density.
Document #: 38-05328 Rev. *E
Page 2 of 12
CY62167DV30
MoBL
Maximum Ratings
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-up Current..................................................... > 200 mA
Storage Temperature ................................ –65°C to + 150°C
Operating Range
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage to Ground Potential .......–0.2V to VCC + 0.3V
Device
DC Voltage Applied to Outputs
in High-Z State[6, 7] .................................–0.2V to VCC + 0.3V
CY62167DV30L
Range
Ambient
Temperature
Industrial
–40°C to +85°C
VCC[8]
CY62167DV30LL
DC Input Voltage[6, 7] .............................–0.2V to VCC + 0.3V
2.20V to
3.60V
Product Portfolio
Power Dissipation
Operating ICC(mA)
VCC Range (V)
Product
CY62167DV30L
Min.
Typ.[9]
Max.
2.20
3.0
3.60
f = 1MHz
Typ.[9]
Max.
55
2
4
70
CY62167DV30LL
55
2
Standby ISB2(µA)
f = fmax
Speed
(ns)
4
70
Typ.[9]
Max.
Typ.[9]
Max.
15
30
2.5
30
12
25
2.5
22
15
30
12
25
Electrical Characteristics Over the Operating Range
CY62167DV30-55
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
Test Conditions
IOH = –0.1 mA
Min. Typ.
VCC = 2.20V
2.0
IOH = –1.0 mA
VCC = 2.70V
2.4
IOL = 0.1 mA
VCC = 2.20V
IOL = 2.1mA
VCC = 2.70V
[9]
CY62167DV30-70
Max. Min. Typ.[9] Max. Unit
2.0
V
2.4
V
0.4
0.4
0.4
V
0.4
V
VCC = 2.2V to 2.7V
1.8
VCC 1.8
+0.3V
VCC
+0.3V
V
VCC= 2.7V to 3.6V
2.2
VCC 2.2
+0.3V
VCC
+0.3V
V
VCC = 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
V
VCC= 2.7V to 3.6V
VIL
Input LOW Voltage
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage Current GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage
Current
–1
+1
–1
+1
µA
ICC
VCC Operating Supply f = fMAX = 1/tRC
Current
f = 1 MHz
ISB1
ISB2
GND < VO < VCC, Output Disabled
VCC = VCCmax
IOUT = 0 mA
CMOS levels
15
30
12
25
mA
2
4
2
4
mA
Automatic CE
Power-down
Current — CMOS
Inputs
CE1 > VCC − 0.2V or CE2 < 0.2V
L
VIN > VCC – 0.2V, VIN < 0.2V)
LL
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE, BLE), VCC = 3.60V
2.5
30
2.5
25
µA
2.5
22
2.5
22
Automatic CE
Power-down
Current — CMOS
Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
L
2.5
30
2.5
30
LL
2.5
22
2.5
22
µA
Notes:
6. VIL(min.) = –2.0V for pulse durations less than 20 ns.
7. VIH(Max) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full Device AC operation requires linear VCC ramp from 0 to VCC(min.)> = 500 µs.
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
Document #: 38-05328 Rev. *E
Page 3 of 12
CY62167DV30
MoBL
Capacitance[10, 11]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
Unit
8
pF
10
pF
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
Thermal Resistance
Parameter
Description
Test Conditions
ΘJA
Thermal Resistance
(Junction to Ambient)[10]
ΘJC
Thermal Resistance
(Junction to Case)[10]
BGA
TSOP I
Unit
55
60
°C/W
16
4.3
°C/W
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board
AC Test Loads and Waveforms
R1
VCC
OUTPUT
50 pF
VCC
R2
10%
GND
Rise Time = 1 V/ns
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
RTH
OUTPUT
V
Parameters
2.50V
3.0V
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
VDR
VCC for Data Retention
ICCDR
Data Retention Current
Conditions
Min.
Typ.[9] Max.
1.5
L
VCC= 1.5V
CE1 > VCC – 0.2V, CE2 < 0.2V,
LL
VIN > VCC – 0.2V or VIN < 0.2V
tCDR[10]
Chip Deselect to Data Retention Time
tR[12]
Operation Recovery Time
Unit
V
15
µA
10
0
ns
tRC
ns
Data Retention Waveform[13]
VCC
VCC, min.
tCDR
DATA RETENTION MODE
VDR > 1.5 V
VCC, min.
tR
CE1 or
BHE.BLE
or
CE2
Notes:
10. Tested initially and after any design or process changes that may affect these parameters.
11. This applies for all packages.
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs.
13. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Document #: 38-05328 Rev. *E
Page 4 of 12
CY62167DV30
MoBL
Switching Characteristics Over the Operating Range[14]
55 ns
Parameter
Description
Min.
70 ns
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
55
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE1 LOW and CE2 HIGH to Data Valid
55
70
ns
tDOE
OE LOW to Data Valid
25
35
ns
25
ns
55
[15]
tLZOE
OE LOW to LOW Z
tHZOE
OE HIGH to High Z[15, 16]
tLZCE
CE1 LOW and CE2 HIGH to Low Z[15]
tPU
CE1 LOW and CE2 HIGH to Power-up
tPD
CE1 HIGH and CE2 LOW to Power-down
tDBE
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low
Z[15]
BLE/BHE HIGH to HIGH
70
ns
10
20
ns
ns
5
10
ns
25
ns
55
70
ns
55
70
ns
0
0
10
Z[15, 16]
ns
10
20
LOW to High Z[15, 16]
CE1 HIGH and CE2
tHZBE
10
5
tHZCE
tLZBE
70
ns
10
20
ns
25
ns
Write Cycle[17]
tWC
Write Cycle Time
55
70
ns
tSCE
CE1 LOW and CE2 HIGH to Write End
40
60
ns
tAW
Address Set-Up to Write End
40
60
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
40
45
ns
tBW
BLE / BHE LOW to Write End
40
60
ns
tSD
Data Set-Up to Write End
25
30
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE
tLZWE
WE LOW to
High-Z[15, 16]
[15]
WE HIGH to Low-Z
20
10
25
10
ns
ns
Notes:
14. Test conditions for all parameters other than three-state parameters assume signal transition time of 1 ns/V, timing reference levels of VCC(typ)/2, input pulse
levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.
15. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any
given device.
16. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.
17. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate
a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal
that terminates the Write.
Document #: 38-05328 Rev. *E
Page 5 of 12
CY62167DV30
MoBL
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[18, 19]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle 2 (OE Controlled)[19, 20]
ADDRESS
tRC
CE1
tPD
CE2
tHZCE
tACE
BHE/BLE
tLZBE
tDBE
tHZBE
OE
tHZOE
tDOE
DATA OUT
VCC
SUPPLY
CURRENT
tLZOE
HIGH IMPEDANCE
tPU
HIGH
IMPEDANCE
DATA VALID
tLZCE
50%
50%
ICC
ISB
Notes:
18. The device is continuously selected. OE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH.
19. WE is HIGH for read cycle.
Document #: 38-05328 Rev. *E
Page 6 of 12
CY62167DV30
MoBL
Switching Waveforms (continued)
Write Cycle 1 (WE Controlled)[17, 21, 22, 23]
tWC
ADDRESS
tSCE
CE1
CE2
tSA
tAW
tPWE
tHA
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
VALID DATA
See Note 23
tHZOE
Notes:
20. Address valid prior to or coincident with CE1, BHE, BLE transition LOW and CE2 transition HIGH.
21. Data I/O is high-impedance if OE = VIH.
22. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high-impedance state.
23. During this period, the I/Os are in output state and input signals should not be applied.
Document #: 38-05328 Rev. *E
Page 7 of 12
CY62167DV30
MoBL
Switching Waveforms (continued)
Write Cycle 2 (CE1 or CE2 Controlled)[17, 21, 22, 23]
tWC
ADDRESS
tSCE
CE1
CE2
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
VALID DATA
See Note 23
tHZOE
Write Cycle 3 (WE Controlled, OE LOW)[22, 23]
tWC
ADDRESS
tSCE
CE1
CE2
tBW
BHE/BLE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
See Note 23
VALID DATA
tHZWE
Document #: 38-05328 Rev. *E
tHD
tLZWE
Page 8 of 12
CY62167DV30
MoBL
Switching Waveforms (continued)
Write Cycle 4 (BHE/BLE Controlled, OE LOW)[22, 23]
tWC
ADDRESS
CE1
CE2
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tHD
tSD
DATA I/O
See Note 23
VALID DATA
Truth Table
CE1
CE2
WE
OE
BHE
BLE
H
X
X
X
X
X
X
L
X
X
X
X
Inputs/Outputs
Mode
Power
High Z
Deselect/Power-Down
Standby (ISB)
High Z
Deselect/Power-Down
Standby (ISB)
X
X
X
X
H
H
High Z
Deselect/Power-Down
Standby (ISB)
L
H
H
L
L
L
Data Out (I/O0–I/O15)
Read
Active (ICC)
L
H
H
L
H
L
Data Out (I/O0–I/O7);
High Z (I/O8–I/O15)
Read
Active (ICC)
L
H
H
L
L
H
High Z (I/O0–I/O7);
Data Out (I/O8–I/O15)
Read
Active (ICC)
L
H
H
H
L
H
High Z
Output Disabled
Active (ICC)
L
H
H
H
H
L
High Z
Output Disabled
Active (ICC)
L
H
H
H
L
L
High Z
Output Disabled
Active (ICC)
L
H
L
X
L
L
Data In (I/O0–I/O15)
Write
Active (ICC)
L
H
L
X
H
L
Data In (I/O0–I/O7);
High Z (I/O8–I/O15)
Write
Active (ICC)
L
H
L
X
L
H
High Z (I/O0–I/O7);
Data In (I/O8–I/O15)
Write
Active (ICC)
Document #: 38-05328 Rev. *E
Page 9 of 12
CY62167DV30
MoBL
Ordering Information
Speed
(ns)
55
Ordering Code
CY62167DV30L-55BVI
CY62167DV30LL-55BVI
CY62167DV30L-55ZI
CY62167DV30LL-55ZI
CY62167DV30L-70BVI
CY62167DV30LL-70BVI
CY62167DV30L-70ZI
CY62167DV30LL-70ZI
55
70
70
Package
Name
Package Type
BV48B 48-ball Fine Pitch BGA (8 mm × 9.5mm × 1 mm)
Z48A
BV48B
Z48A
Operating
Range
Industrial
48 Pin TSOP I
Industrial
48-ball Fine Pitch BGA (8 mm × 9.5mm × 1 mm)
Industrial
48-pin TSOP I
Industrial
Package Diagrams
48-Lead VFBGA (8 x 9.5 x 1 mm) BV48B
BOTTOM VIEW
TOP VIEW
A1 CORNER
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
2
3
4
5
6
6
5
4
3
2
1
A
B
C
C
E
F
G
D
E
F
2.625
9.50±0.10
D
0.75
A
B
5.25
9.50±0.10
1
Ø0.30±0.05(48X)
G
H
H
A
1.875
A
B
0.75
8.00±0.10
B
0.10 C
0.21±0.05
0.25 C
0.55 MAX.
3.75
8.00±0.10
0.15(4X)
1.00 MAX
0.26 MAX.
SEATING PLANE
C
51-85178-**
Document #: 38-05328 Rev. *E
Page 10 of 12
CY62167DV30
MoBL
Package Diagrams
DIMENSIONS IN INCHES[MM] MIN.
48-Lead TSOP I (12 mm x 18.4 mm x 1.0 mm) Z48A
MAX.
JEDEC # MO-142
0.037[0.95]
0.041[1.05]
N
1
0.020[0.50]
TYP.
0.472[12.00]
0.007[0.17]
0.011[0.27]
0.002[0.05]
0.006[0.15]
0.724 [18.40]
0.047[1.20]
MAX.
SEATING PLANE
0.004[0.10]
0.787[20.00]
0.004[0.10]
0.008[0.21]
0.010[0.25]
GAUGE PLANE
0°-5°
0.020[0.50]
0.028[0.70]
51-85183-*A
MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semiconductor Corporation. All product and
company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05328 Rev. *E
Page 11 of 12
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY62167DV30
MoBL
Document History Page
Document Title:CY62167DV30 MoBL 16-Mbit (1M x 16) Static RAM
Document Number: 38-05328
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
118408
09/30/02
GUG
New Data Sheet
*A
123692
02/11/03
DPM
Changed Advanced to Preliminary
Added package diagram
*B
126555
04/25/03
DPM
Minor change: Changed Sunset Owner from DPM to HRT
*C
127841
09/10/03
XRJ
Added 48 TSOP I package
*D
205701
AJU
Changed BYTE pin usage description for 48 TSOPI package
*E
238050
See ECN
Document #: 38-05328 Rev. *E
KKV/AJU Replaced 48-lead VFBGA package diagram; Modified Package Name in
Ordering Information table from BV48A to BV48B
Page 12 of 12