FAIRCHILD BC182B

BC182LB
BC182LB
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 10.
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
50
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
100
mA
TJ, TSTG
Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
Units
V
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage
Test Condition
Min.
Typ.
Max.
Units
IC = 2mA, IB = 0
50
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
60
V
6
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
ICBO
Collector Cut-off Current
VCB = 50V, VBE = 0
15
nA
IEBO
Emitter-Base Leakage Current
VEB = 4V, IE = 0
15
nA
0.25
0.6
V
On Characteristics
hFE
DC Current Gain
VCE(sat)
VCE = 5V, IC = 10µA
VCE = 5V, IC = 100mA
40
80
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100mA, IB = 5mA
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2mA
0.55
VCE = 5V, IC = 10mA, f = 100MHz
150
Dynamic Characteristics
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
VCE = 10V, IC = 0, f = 1MHz
hfe
Small Signal Current Gain
VCE = 5V, IC = 2mA, f = 1KHz
NF
Noise Figure
VCE = 5V, IC = 0.2mA
RS = 2KΩ, f = 1KHz, BW = 200Hz
©2002 Fairchild Semiconductor Corporation
V
1.2
V
0.7
V
MHz
5
240
pF
500
10
dB
Rev. A1, August 2002
Symbol
PD
Parameter
Total Device Dissipation @TA=25°C
Derate above 25°C
Max.
350
2.8
Units
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
357
mW/°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC182LB
Thermal Characteristics TA=25°C unless otherwise noted
BC182LB
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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As used herein:
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1