TAK CHEONG ® TCBAW76 SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units 500 -65 to +150 mW °C +175 °C Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current Peak Forward Surge Current (Pulse Width = 1.0 µsecond) 450 mA 2 A IFSURGE DEVICE MARKING DIAGRAM L AW 76 L : Logo These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Fast Switching Device (TRR <4.0 nS) DO-35 Package (JEDEC) Through-Hole Device Type Mounting Anode Cathode Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable ELECTRICAL SYMBOL RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Limits Test Condition Min Unit Max BV Breakdown Voltage IR=5µA IR Reverse Leakage Current VR=50V 100 nA VR=50V TA = 150° 100 uA 1.0 Volts 75 Volts VF Forward Voltage IF=100mA TRR Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA 4 IF= 10mA, VR=6V, RL=100Ω, IRR=1mA 2 VR=0V, f=1MHZ 4 C Capacitance nS pF Number: DB-037 June 2008 / D Page 1 TAK CHEONG ® SEM IC O N DU C TO R Typical Characteristics 1.5 400 Total Capacitance [pF] PD - Power Dissipation [mW] 500 300 200 100 f = 1MHz Ta = 25℃ 1.0 0.5 0.0 0 0 25 50 75 100 125 150 175 0 200 5 10 Temperature [℃ ] 15 20 25 30 VR - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Figure 2. Total Capacitance Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature 60 Ta=25℃ IR - Leakage Current [nA] BV - Reverse Voltage [V] 160 150 140 130 120 110 40 30 20 10 0 1 10 100 10 IR - Reverse Current [uA] Figure 3. Reverse Voltage vs Reverse Current BV – 1.0uA to 100uA 1500 1400 Ta=25℃ 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0.001 VR - Reverse Voltage [V] 100 Figure 4. Reverse Current vs Reverse Voltage IR – 10V to 100V 1000 VF - Forward Voltage (mV) VF - Forward Voltage [mV] Ta=25℃ 50 0.100 10.000 IF - Forw ard Current [m A] 1000.000 Figure 5. Forward Voltage vs Forward Current VF – 0.001mA to 800mA 800 600 Ta= -40℃ Ta=25℃ 400 Ta=65℃ Ta=125℃ 200 0 0.01 0.1 1 10 IF - Forw ard Current (m A) 100 Figure 6. Forward Voltage vs Ambient Temperature VF – 0.01mA to 100mA (-40 to +125 Deg C) Number: DB-037 June 2008 / D Page 2 TAK CHEONG ® SEM IC O N DU C TO R Package Outline Package Case Outline DO-35 DO-35 DIM Millimeters Inches Min Max Min Max A 0.46 0.55 0.018 0.022 B 3.05 5.08 0.120 0.200 C 25.40 38.10 1.000 1.500 D 1.53 2.28 0.060 0.090 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. Number: DB-037 June 2008 / D Page 3 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A