SAVANTIC 2SC1683

SavantIC Semiconductor
Product Specification
2SC1683
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SA843
·High breakdown voltage
·Large collector power dissipation
APPLICATIONS
·Audio frequency power amplifier
·Color TV vertical deflection output
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
500
mA
2
A
20
W
IC
Collector current
ICM
Collector current-peak
PT
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
TC=25
SavantIC Semiconductor
Product Specification
2SC1683
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; IB=0
150
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA ; IE=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=0.5mA ; IC=0
5
V
Collector-emitter saturation voltage
IC=500mA; IB=50mA
1.0
V
VBE
Base-emitter on voltage
IC=400m A ; VCE=10V
1.0
V
ICBO
Collector cut-off current
VCB=200V ;IE=0
50
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
50
µA
hFE
DC current gain
IC=400m A ; VCE=10V
VCEsat
CONDITIONS
hFE Classifications
P
Q
60-140
85-200
2
MIN
60
TYP.
MAX
200
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC1683