VISHAY 80EBU04

80EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PTTM
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
RoHS
• Screw mounting only
COMPLIANT
• Lead (Pb)-free plating
Cathode
Anode
• Designed and qualified for industrial level
BENEFITS
PowerTabTM
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
DESCRIPTION/APPLICATIONS
trr (typical)
50 ns
IF(AV)
80 A
VR
400 V
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
MAX.
UNITS
400
V
VR
IF(AV)
TC = 101 °C
Single pulse forward current
IFSM
TC = 25 °C
800
Maximum repetitive forward current
IFRM
Square wave, 20 kHz
160
Continuous forward current
Operating junction and
storage temperatures
80
TJ, TStg
A
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
Vr
VF
TEST CONDITIONS
IR = 100 µA
MIN.
TYP.
MAX.
400
-
-
UNITS
IF = 80 A
-
1.1
1.3
IF = 80 A, TJ = 175 °C
-
0.92
1.08
0.98
1.15
-
50
µA
IF = 80 A, TJ = 125 °C
VR = VR rated
-
V
Reverse leakage current
IR
TJ = 150 °C, VR = VR rated
-
-
2
mA
Junction capacitance
CT
VR = 200 V
-
50
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
Document Number: 93025
Revision: 30-Oct-08
For technical questions, contact: [email protected]
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80EBU04
Vishay High Power Products Ultrafast Soft Recovery Diode,
80 A FRED PTTM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V
-
50
60
TJ = 25 °C
-
87
-
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
UNITS
ns
-
151
-
-
9.3
-
-
17.2
-
TJ = 25 °C
-
405
-
TJ = 125 °C
-
1300
-
MIN.
TYP.
MAX.
-
-
0.70
-
0.2
-
-
-
5.02
g
-
0.18
-
oz.
1.2
(10)
-
2.4
(20)
N·m
(lbf · in)
IF = 80 A
VR = 200 V
dIF/dt = 200 A/µs
TJ = 25 °C
TJ = 125 °C
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to heatsink
RthCS
TEST CONDITIONS
K/W
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
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UNITS
Case style PowerTabTM
For technical questions, contact: [email protected]
80EBU04
Document Number: 93025
Revision: 30-Oct-08
80EBU04
Ultrafast Soft Recovery Diode, Vishay High Power Products
80 A FRED PTTM
1000
T J = 175˚C
Reverse Current - I R (µA)
Instantaneous Forward Current - I F (A)
1000
100
100
125˚C
10
1
25˚C
0.1
0.01
0.001
T = 175˚C
0
J
100
200
300
400
T = 125˚C
Reverse Voltage - VR (V)
T = 25˚C
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
J
J
Junction Capacitance - C T (pF)
1000
10
T J = 25˚C
100
1
0
0.5
1
1.5
2
10
2.5
1
Forward Voltage Drop - VFM (V)
10
100
1000
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance Z thJC (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93025
Revision: 30-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
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80EBU04
Vishay High Power Products Ultrafast Soft Recovery Diode,
80 A FRED PTTM
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
160
200
IF = 160A
IF = 80A
IF = 40A
140
DC
trr ( ns )
Allowable Case Temperature (°C)
180
120
150
100 Square wave (D = 0.50)
80% Rated Vr applied
80
100
see note (1)
60
0
20
40
60
80
100
120
Average Forward Current - IF(AV) (A)
50
100
1000
di F /dt (A/µs )
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
4500
140
4000
120
3500
100
3000
80
Qrr ( nC )
Average Power Loss ( Watts )
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
60
40
20
20
40
60
80
100
IF = 160A
IF = 80A
IF = 40A
2000
1500
1000
0
0
2500
Vr = 200V
Tj = 125˚C
Tj = 25˚C
120
Average Forward Current - IF(AV) (A)
500
0
100
1000
di F /dt (A/µs )
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions, contact: [email protected]
Document Number: 93025
Revision: 30-Oct-08
80EBU04
Ultrafast Soft Recovery Diode, Vishay High Power Products
80 A FRED PTTM
VR = 200 V
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93025
Revision: 30-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
5
80EBU04
Vishay High Power Products Ultrafast Soft Recovery Diode,
80 A FRED PTTM
ORDERING INFORMATION TABLE
Device code
80
E
B
U
04
1
2
3
4
5
1
-
Current rating (80 = 80 A)
2
-
Single diode
3
-
PowerTabTM (ultrafast/hyperfast only)
4
-
Ultrafast recovery
5
-
Voltage rating (04 = 400 V)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95240
Part marking information
http://www.vishay.com/doc?95370
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For technical questions, contact: [email protected]
Document Number: 93025
Revision: 30-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1