MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 1dB Insertion Loss , 30dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating J4 J3 J5 Description The MA4SW510 is a SP5T series-shunt broad band switch made with M/A-COM’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies. J2 J1 J6 Yellow areas indicate 2.5µM thick gold bond pads Applications These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50ns switching speeds are achieved. Absolute Maximum Ratings TAMB = +25°C (Unless otherwise specified) PARAMETER VALUE Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C RF C.W. Incident Power +30dBm Forward Bias Current ± 20mA Reverse Applied Voltage -25 Volts Notes: 1. Exceeding any one of these values may result in permanent damage to the chip. 2. Maximum operating conditions for combination of RF power, D.C. bias and temperature: +30dBm C.W. @ 15mA/diode @ +85°C MA4SW510 Schematic 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Typical Driver Connections Control Level ( DC Current ) at Port J5 J6 Condition of RF Output Condition of RF Output Condition of RF Output Condition of RF Output Condition of RF Output J2 - J1 J3 - J1 J4 - J1 J5 - J1 J6 - J1 Isolation Isolation Isolation Isolation J2 J3 J4 -20 mA +20 mA +20 mA +20 mA +20 mA Low Loss +20 mA -20 mA +20 mA +20 mA +20 mA Isolation Low Loss Isolation Isolation Isolation +20 mA +20 mA -20 mA +20 mA +20 mA Isolation Isolation Low Loss Isolation Isolation +20 mA +20 mA +20 mA -20 mA +20 mA Isolation Isolation Isolation Low Loss Isolation +20 mA +20 mA +20 mA +20 mA -20 mA Isolation Isolation Isolation Isolation Low Loss RF Electrical Specifications @ TAMB = 25°C, ± 20mA bias current (probed on-wafer measurements) Parameter Frequency Insertion Loss 20 GHz Isolation 20 GHz Input Return Loss Minimum 28 Nominal Maximum Units 0.9 1.4 dB 38 dB 20 GHz 22 dB Output Return Loss 20 GHz 23 dB Switching Speed1 10 GHz 1 50 nS Note: 1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF and a resistor between 150Ω - 220Ω to achieve 50ns rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Typical Microwave Performance INSERTION LOSS 0.000 Loss (dB) -0.200 -0.400 -0.600 -0.800 -1.000 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 16.0 18.0 20.0 Frequency (GHz) J2 J3 J4 J5 J6 ISOLATION 0 -10 Isolation (dB) -20 -30 -40 -50 -60 -70 -80 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 Frequency (GHz) J2 J3 J4 J5 J6 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Typical Microwave Performance OUTPUT RETURN LOSS 0 -5 Loss (dB) -10 -15 -20 -25 -30 -35 -40 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) J2 J3 J4 J5 J6 INPUT RETURN LOSS 0 -5 -10 -15 Loss (dB) -20 -25 -30 -35. -40. 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) J2 J3 J4 J5 J6 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Operation of the MA4SW510 Switch The simultaneous application of negative DC current to the low loss port and positive DC current to the remaining Isolated ports as shown in Fig.1 achieves operation of the MA4SW510 diode switch. The backside area of the die is the RF and DC return ground plane. The DC return is achieved on common Port J1. Constant current sources should supply the DC control currents. The voltages at these points will not exceed ±1.5 volts (1.2 volts typical) for supply currents up to ± 20 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. The bias network design should yield >30 dB RF to DC isolation. Best insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the DC return path, (J1). A minimum value of -2V is recommended at this return node, which is achievable with a standard , 65V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz operation is shown in Fig.1. 2 – 18 GHz Bias Network Schematic J1 39 pF 22 pF DC Bias 39 pF 22 nH 100 Ω 22 nH J6 MA4SW510 Die J5 22 pF J4 J2 J3 Fig. 1 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 ASSEMBLY AND HANDLING INSTRUCTIONS Cleanliness These chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MA4SW510 PIN switch is ESD, Class 1A sensitive (HBM). The proper ESD handling procedures must be used. Wire Bonding Thermosonic wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A heat stage temperature of 150oC and a force of 18 to 22 grams should be used. If ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. RF bond wires should be kept as short as possible. Chip Mounting The HMIC switches have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat. Eutectic Die Attachment: An 80/20, gold-tin, eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the temperature at the chip should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three seconds should be required for attachment. Solders rich in tin should not be used. Epoxy Die Attachment: A minimum amount of epoxy, 1-2 mils thick, should be used to attach chip. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement. Cure epoxy per product instructions. Typically 150°C for 1 hour. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4SW510 HMIC™ Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 MA4SW510 Chip Dimensions Notes: 1. Topside and backside metallization is gold , 2.5µm thick typical. 2. Yellow areas indicate bonding pads Chip Dimensions* DIM A B C D E F G All Pads Thickness INCHES 0.0680 0.0340 0.0580 0.0370 0.0295 0.0295 0.0325 .005 X .005 0.005 μM 1723 858 1473 938 750 750 825 120 X 120 127 *All chip dimension tolerances are ±.0005” 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.