IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Available • P-Channel 1.5 RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements Qgd (nC) Configuration Single • Lead (Pb)-free Available S TO-220 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G COMPLIANT D D P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw UNIT V - 3.5 - 2.0 A - 14 0.32 W/°C PD 40 W dV/dt - 5.0 V/ns TJ, Tstg - 55 to + 150 300c °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. ISD ≤ - 3.5 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. c. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 1 IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 µA - 200 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = - 200 V, VGS = 0 V - - - 100 VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 ID = - 1.5 Ab VGS = - 10 V VDS = - 50 V, ID = - 1.5 Ab µA - - 1.5 Ω 1.0 - - S - 350 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 VGS = - 10 V ID = - 4.0 A, VDS = - 160 V, see fig. 11 and 18b - 100 - - 30 - - - 22 - - 12 pF nC Gate-Drain Charge Qgd - - 10 Turn-On Delay Time td(on) - 15 - - 25 - - 20 - - 15 - - 4.5 - - 7.5 - - - - 3.5 - - - 14 - - - 7.0 V - 300 450 ns - 1.9 2.9 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = - 100 V, ID = - 1.5 A, RG = 50 Ω, RD = 67 Ω, see fig. 17b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 3.5 A, VGS = 0 Vb TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SiHF9620 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Document Number: 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 3 IRF9620, SiHF9620 Vishay Siliconix Fig. 6 - Typical Transconductance vs. Drain Current Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Breakdown Voltage vs. Temperature www.vishay.com 4 Fig. 9 - Normalized On-Resistance vs. Temperature Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SiHF9620 Vishay Siliconix L Vary tp to obtain required IL VGS = - 10 V VDS V DD tp + D.U.T. EC 0.05 Ω IL VDD = 0.5 VDS EC = 0.75 VDS Fig. 15 - Clamped Inductive Test Circuit VDD IL tp VDS EC Fig. 12 - Typical On-Resistance vs. Drain Current Fig. 16 - Clamped Inductive Waveforms RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 13 - Maximum Drain Current vs. Case Temperature Fig. 17a - Switching Time Test Circuit td(on) tr td(off) tf VGS 10 % 90 % VDS Fig. 14 - Power vs. Temperature Derating Curve Document Number: 91082 S-81272-Rev. A, 16-Jun-08 Fig. 17b - Switching Time Waveforms www.vishay.com 5 IRF9620, SiHF9620 Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG - 15 V 0.2 µF 12 V 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = - 5 V for logic level and - 3 V drive devices Fig. 19 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91082. www.vishay.com 6 Document Number: 91082 S-81272-Rev. A, 16-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1