VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2853RG FEATURES VSMY2853G • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • Peak wavelength: λp = 850 nm • High reliability • High radiant power 22689 • Very high radiant intensity • Angle of half intensity: ϕ = ± 28° DESCRIPTION • Suitable for high pulse current operation SurfLightTM As part of the portfolio, the VSMY2853 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Terminal configurations: gullwing or reverse gullwing • Package matches with detector VEMD2503X01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR touch panels • IR illumination • 3D TV PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY2853RG 35 ± 28 850 10 VSMY2853G 35 ± 28 850 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2853RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2853G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.1, 28-Mar-13 Document Number: 83480 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 190 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb - 40 to + 85 °C Storage temperature range Soldering temperature Thermal resistance junction/ambient Tstg - 40 to + 100 °C acc. figure 7, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21890 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 10 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21891 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms VF Radiant intensity TYP. MAX. UNIT 1.65 1.9 V IF = 1 A, tp = 100 μs VF 2.9 V IF = 1 mA TKVF - 1.45 mV/K IF = 10 mA TKVF - 1.3 mV/K IR not designed for reverse operation μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ 125 IF = 100 mA, tp = 20 ms Ie Reverse current Junction capacitance MIN. 20 35 pF 50 mW/sr IF = 1 A, tp = 100 μs Ie 380 mW/sr IF = 100 mA, tp = 20 ms φe 55 mW IF = 100 mA TKφe - 0.35 %/K Peak wavelength IF = 100 mA λp Spectral bandwidth IF = 30 mA Δλ 30 nm Temperature coefficient of λp IF = 30 mA TKλp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 10 ns Fall time IF = 100 mA, 20 % to 80 % tf 10 ns Radiant power Temperature coefficient of radiant power ϕ Angle of half intensity Rev. 1.1, 28-Mar-13 ± 28 840 850 deg 870 nm Document Number: 83480 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Φe, rel - Relative Radiant Power 1 0.1 0.01 IF = 30 mA 0.75 0.5 0.25 0.001 0 0.5 1 1.5 2 2.5 3 VF - Forward Voltage (V) 22097 0 650 3.5 750 Fig. 3 - Forward Current vs. Forward Voltage 850 Fig. 5 - Relative Radiant Power vs. Wavelength 0° 1000 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 10° 20° 30° tp = 100 µs 100 10 1 0.1 0.001 0.01 0.1 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 22688 Fig. 4 - Radiant Intensity vs. Forward Current SOLDER PROFILE Fig. 6 - Relative Radiant Intensity vs. Angular Displacement DRYPACK 300 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 40° 1.0 1 IF - Forward Current (A) Temperature (°C) 950 λ - Wavelength (nm) 21776-1 ϕ - Angular Displacement IF - Forward Current (A) tp = 100 µs 1 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.1, 28-Mar-13 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 83480 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2853RG Rev. 1.1, 28-Mar-13 Document Number: 83480 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2853G Rev. 1.1, 28-Mar-13 Document Number: 83480 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2853RG Rev. 1.1, 28-Mar-13 Document Number: 83480 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2853G Rev. 1.1, 28-Mar-13 Document Number: 83480 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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