VISHAY BAS282-GS18

BAS281 / 282 / 283
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
e2
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612009
Applications
Mechanical Data
• General purpose and switching Schottky barrier
diode
• HF-Detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC / DC converter for notebooks
Case: QuadroMELF Glass case SOD80
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Ordering code
Remarks
BAS281
Part
VR = 40 V
Type differentiation
BAS281-GS18 or BAS281-GS08
Tape and Reel
BAS282
VR = 50 V
BAS282-GS18 or BAS282-GS08
Tape and Reel
BAS283
VR = 60 V
BAS283-GS18 or BAS283-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Part
Symbol
Value
Unit
BAS281
VR
40
V
BAS282
VR
50
V
BAS283
Peak forward surge current
Repetitive peak forward current
Forward current
Document Number 85500
Rev. 1.7, 17-Mar-06
tp = 1 s
VR
60
V
IFSM
500
mA
IFRM
150
mA
IF
30
mA
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BAS281 / 282 / 283
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction to ambient air
Symbol
Value
Unit
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
on PC board
50 mm x 50 mm x 1.6 mm
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max
Unit
330
mV
VF
410
mV
VF
1000
mV
VR = VRmax
IR
200
nA
VR = 1 V, f = 1 MHz
CD
1.6
pF
IF = 0.1 mA
VF
IF = 1 mA
IF = 15 mA
Reverse current
Diode capacitance
Forward voltage
Min
Typ.
Typical Characteristics
1000
14
VR = 60 V
V R = VRRM
12
I R - Reverse Current (µA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
RthJA = 540 kW
10
8
Limit at
PPRR - Limit
at100
100%%VRVR
6
4
PR - Limit at 80 % VR
10
1
2
0.1
25
0
25
15794
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
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2
100
15795
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
Document Number 85500
Rev. 1.7, 17-Mar-06
BAS281 / 282 / 283
Vishay Semiconductors
2.0
CD - Diode Capacitance (pF)
I F - Forward Current (A)
1000
100
Tj =150 °C
10
Tj = 25 °C
1
0.1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0
15796
0.5
1
1.5
2.0
0.1
15797
V F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
12071
Document Number 85500
Rev. 1.7, 17-Mar-06
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BAS281 / 282 / 283
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85500
Rev. 1.7, 17-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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