VISHAY BAT85S-TR

BAT85S
Vishay Semiconductors
Small Signal Schottky Diode
Features
• Integrated protection ring against static
discharge
e2
• Very low forward voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT85S
Ordering code
Type Marking
Remarks
BAT85S-TR or BAT85S-TAP
BAT85S
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Symbol
Value
VR
Unit
30
V
Peak forward surge current
tp ≤ 10 ms
IFSM
5
A
Repetitive peak forward current
tp ≤ 1 s
IFRM
300
mA
IF
200
mA
PCB mounting, l = 4 mm;
VRWM = 25 V, Tamb = 50 °C
IFAV
200
mA
Forward continuous current
Average forward current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
350
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
Document Number 85513
Rev. 1.8, 26-Feb-07
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1
BAT85S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Max
Unit
IF = 0.1 mA
Symbol
VF
Min
Typ.
240
mV
IF = 1 mA
VF
320
mV
IF = 10 mA
VF
400
mV
IF = 30 mA
VF
500
mV
IF = 100 mA
VF
800
mV
Reverse current
VR = 25 V
IR
2
µA
Diode capacitance
VR = 1 V, f = 1 MHz
CD
10
pF
Reverse Recovery Time
IF = 10 mA to IR = 10 mA to iR = 1 mA
trr
5
ns
Typical Characteristics
1000
200
VR = 30 V
180
IF - Forward Current (mA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
160
140
RthJA = 540 kW
120
PR - Limit
at 100 % VR
100
80
PR - Limit
at 80 % VR
60
40
Tj = 25 °C
10
1
20
0.1
0
25
50
75
100
125
0
150
Tj - Junction Temperature (°C)
15822
0.5
1.0
1.5
VF - Forward Voltage (V)
15824
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
1000
10
CD - Diode Capacitance (pF)
IR - Reverse Current (µA)
Tj = 125 °C
100
VR = VRRM
100
10
f = 1 MHz
9
8
7
6
5
4
3
2
1
1
0
25
15823
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
0.1
15825
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85513
Rev. 1.8, 26-Feb-07
BAT85S
Vishay Semiconductors
Package Dimensions in millimeters (inches): DO35
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85513
Rev. 1.8, 26-Feb-07
www.vishay.com
3
BAT85S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85513
Rev. 1.8, 26-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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