CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B 64-Kbit (8 K × 8) SPI nvSRAM 64-Kbit (8 K × 8) SPI nvSRAM Features ■ ■ ■ 64-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 8 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using SPI instruction (Software STORE) ❐ RECALL to SRAM initiated on power-up (Power-Up RECALL) or by SPI instruction (Software RECALL) ❐ Support automatic STORE on power-down with a small capacitor (except for CY14MX064Q1B) High reliability ❐ Infinite read, write, and RECALL cycles 1million STORE cycles to QuantumTrap ❐ Data retention: 20 years at 85 C ■ High speed serial peripheral interface (SPI) ❐ 40-MHz clock rate SPI write and read with zero cycle delay ❐ Supports SPI mode 0 (0,0) and mode 3 (1,1) ❐ ■ ■ ■ SPI access to special functions ❐ Nonvolatile STORE/RECALL ❐ 8-byte serial number ❐ Manufacturer ID and Product ID ❐ Sleep mode Industry standard configurations ❐ Operating voltages: • CY14MB064Q1B/CY14MB064Q2B: VCC = 2.7 V to 3.6 V • CY14ME064Q1B/CY14ME064Q2B: VCC = 4.5 V to 5.5 V ❐ Industrial temperature ❐ 8-pin small outline integrated circuit (SOIC) package ❐ Restriction of hazardous substances (RoHS) compliant Functional Overview The Cypress CY14MX064Q combines a 64 Kbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 8 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down (except for CY14MX064Q1B). On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instruction. Configuration Write protection ❐ Hardware protection using Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array CY14MX064Q1B CY14MX064Q2B AutoStore Feature No Yes Software STORE Yes Yes Low power consumption ❐ Average active current of 3 mA at 40 MHz operation ❐ Average standby mode current of 120 A ❐ Sleep mode current of 8 A Logic Block Diagram Serial Number 8x8 Manufacturer ID / Product ID Status Register QuantumTrap 8Kx8 WRSR/RDSR/WREN RDSN/WRSN/RDID SI CS SCK SPI Control Logic Write Protection Instruction decoder READ/WRITE STORE/RECALL/ASENB/ASDISB Memory Data & Address Control SRAM 8Kx8 STORE RECALL WP SO VCC VCAP Power Control Block Cypress Semiconductor Corporation Document Number: 001-70382 Rev. *H SLEEP • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised May 6, 2013 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Contents Pinout ................................................................................ 3 Pin Definitions .................................................................. 3 Device Operation .............................................................. 4 SRAM Write ................................................................. 4 SRAM Read ................................................................ 4 STORE Operation ....................................................... 4 AutoStore Operation .................................................... 4 Software STORE Operation ........................................ 5 RECALL Operation ...................................................... 5 Hardware RECALL (Power-Up) .................................. 5 Software RECALL ....................................................... 5 Disabling and Enabling AutoStore ............................... 5 Serial Peripheral Interface ............................................... 6 SPI Overview ............................................................... 6 SPI Modes ................................................................... 7 SPI Operating Features .................................................... 8 Power-Up .................................................................... 8 Power-Down ................................................................ 8 Active Power and Standby Power Modes ................... 8 SPI Functional Description .............................................. 9 Status Register ............................................................... 10 Read Status Register (RDSR) Instruction ................. 10 Write Status Register (WRSR) Instruction ................ 10 Write Protection and Block Protection ......................... 11 Write Enable (WREN) Instruction .............................. 11 Write Disable (WRDI) Instruction .............................. 11 Block Protection ........................................................ 12 Hardware Write Protection (WP) ............................... 12 Memory Access .............................................................. 12 Read Sequence (READ) Instruction .......................... 12 Write Sequence (WRITE) Instruction ........................ 12 nvSRAM Special Instructions ........................................ 14 Software STORE (STORE) Instruction ..................... 14 Software RECALL (RECALL) Instruction .................. 14 Document Number: 001-70382 Rev. *H AutoStore Enable (ASENB) Instruction ..................... 14 AutoStore Disable (ASDISB) Instruction ................... 15 Special Instructions ....................................................... 15 SLEEP Instruction ..................................................... 15 Serial Number ................................................................. 15 WRSN (Serial Number Write) Instruction .................. 15 RDSN (Serial Number Read) Instruction ................... 16 Device ID ......................................................................... 16 RDID (Device ID Read) Instruction ........................... 17 HOLD Pin Operation ................................................. 17 Maximum Ratings ........................................................... 18 Operating Range ............................................................. 18 DC Electrical Characteristics ........................................ 18 Data Retention and Endurance ..................................... 19 Capacitance .................................................................... 19 Thermal Resistance ........................................................ 19 AC Test Loads and Waveforms ..................................... 20 AC Test Conditions ........................................................ 20 AC Switching Characteristics ....................................... 21 Switching Waveforms .................................................... 21 AutoStore or Power-Up RECALL .................................. 22 Software Controlled STORE and RECALL Cycles ...... 23 Switching Waveforms .................................................... 23 Ordering Information ...................................................... 24 Ordering Code Definitions ......................................... 24 Package Diagrams .......................................................... 25 Acronyms ........................................................................ 26 Document Conventions ................................................. 26 Units of Measure ....................................................... 26 Document History Page ................................................. 27 Sales, Solutions, and Legal Information ...................... 28 Worldwide Sales and Design Support ....................... 28 Products .................................................................... 28 PSoC Solutions ......................................................... 28 Page 2 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Pinout Figure 1. 8-pin SOIC pinout [1, 2] CS 1 8 SO 2 WP 3 CY14MX064Q1B 7 Top View 6 not to scale VSS 4 5 VCC CS 1 8 HOLD SO 2 VCAP 3 CY14MX064Q2B 7 Top View 6 not to scale VSS 4 SCK SI 5 VCC HOLD SCK SI Pin Definitions Pin Name [1, 2] I/O Type Description CS Input Chip Select. Activates the device when pulled LOW. Driving this pin high puts the device in low power standby mode. SCK Input Serial Clock. Runs at speeds up to a maximum of fSCK. Serial input is latched at the rising edge of this clock. Serial output is driven at the falling edge of the clock. Serial Input. Pin for input of all SPI instructions and data. SI Input SO Output WP Input Write Protect. Implements hardware write protection in SPI. HOLD Input HOLD Pin. Suspends serial operation. VCAP NC Serial Output. Pin for output of data through SPI. Power supply AutoStore Capacitor. Supplies power to the nvSRAM during power loss to STORE data from the SRAM to nonvolatile elements. If AutoStore is not needed, this pin must be left as No Connect. It must never be connected to ground. No connect No Connect: This pin is not connected to the die. VSS Power supply Ground VCC Power supply Power supply Notes 1. CY14MX064Q1B part does not have VCAP pin and does not support AutoStore. 2. CY14MX064Q2B part does not have WP pin. Document Number: 001-70382 Rev. *H Page 3 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Device Operation CY14MX064Q is a 64 Kbit serial (SPI) nvSRAM memory with a nonvolatile element in each memory cell. All the reads and writes to nvSRAM happen to the SRAM, which gives nvSRAM the unique capability to handle infinite writes to the memory. The data in SRAM is secured by a STORE sequence which transfers the data in parallel to the nonvolatile QuantumTrap cells. A small capacitor (VCAP) is used to AutoStore the SRAM data in nonvolatile cells when power goes down providing power-down data security. The QuantumTrap nonvolatile elements built in the reliable SONOS technology make nvSRAM the ideal choice for secure data storage. The 64-Kbit memory array is organized as 8 K words × 8 bits. The memory can be accessed through a standard SPI interface that enables very high clock speeds up to 40 MHz with zero cycle delay read and write cycles. This device supports SPI modes 0 and 3 (CPOL, CPHA = 0, 0 and 1, 1) and operates as SPI slave. The device is enabled using the Chip Select (CS) pin and accessed through Serial Input (SI), Serial Output (SO), and Serial Clock (SCK) pins. This device provides the feature for hardware and software write protection through the WP pin and WRDI instruction respectively along with mechanisms for block write protection (1/4, 1/2, or full array) using BP0 and BP1 pins in the Status Register. Further, the HOLD pin is used to suspend any serial communication without resetting the serial sequence. CY14MX064Q uses the standard SPI opcodes for memory access. In addition to the general SPI instructions for read and write, it provides four special instructions that allow access to four nvSRAM specific functions: STORE, RECALL, AutoStore Disable (ASDISB), and AutoStore Enable (ASENB). The major benefit of nvSRAM over serial EEPROMs is that all reads and writes to nvSRAM are performed at the speed of SPI bus with zero cycle delay. Therefore, no wait time is required after any of the memory accesses. The STORE and RECALL operations need finite time to complete and all memory accesses are inhibited during this time. While a STORE or RECALL operation is in progress, the busy status of the device is indicated by the RDY bit of the Status Register. The device is available in three different pin configurations that enable you to choose a part which fits in best in their application. The feature summary is given in Table 1. Table 1. Feature Summary Feature CY14MX064Q1B CY14MX064Q2B WP Yes No VCAP No Yes AutoStore No Yes Power-Up RECALL Yes Yes Software STORE Yes Yes SRAM Write All writes to nvSRAM are carried out on the SRAM and do not use up any endurance cycles of the nonvolatile memory. This allows you to perform infinite write operations. A write cycle is Document Number: 001-70382 Rev. *H performed through the WRITE instruction. The WRITE instruction is issued through the SI pin of the nvSRAM and consists of the WRITE opcode, two bytes of address, and one byte of data. Write to nvSRAM is done at SPI bus speed with zero cycle delay. The device allows burst mode writes to be performed through SPI. This enables write operations on consecutive addresses without issuing a new WRITE instruction. When the last address in memory is reached in burst mode, the address rolls over to 0x0000 and the device continues to write. The SPI write cycle sequence is defined explicitly in the Memory Access section of SPI Protocol Description. SRAM Read A read cycle is performed at the SPI bus speed. The data is read out with zero cycle delay after the READ instruction is executed. The READ instruction is issued through the SI pin of the nvSRAM and consists of the READ opcode and two bytes of address. The data is read out on the SO pin. This device allows burst mode reads to be performed through SPI. This enables reads on consecutive addresses without issuing a new READ instruction. When the last address in memory is reached in burst mode read, the address rolls over to 0x0000 and the device continues to read. The SPI read cycle sequence is defined explicitly in the Memory Access section of SPI Protocol Description. STORE Operation STORE operation transfers the data from the SRAM to the nonvolatile QuantumTrap cells. The device STOREs data to the nonvolatile cells using one of the two STORE operations: AutoStore, activated on device power-down; and Software STORE, activated by a STORE instruction. During the STORE cycle, an erase of the previous nonvolatile data is first performed, followed by a program of the nonvolatile elements. After a STORE cycle is initiated, read/write to CY14MX064Q is inhibited until the cycle is completed. The RDY bit in the Status Register can be monitored by the system to detect if a STORE or Software RECALL cycle is in progress. The busy status of nvSRAM is indicated RDY bit being set to ‘1’. To avoid unnecessary nonvolatile STOREs, AutoStore operation is ignored unless at least one write operation has taken place since the most recent STORE or RECALL cycle. However, software initiated STORE cycles are performed regardless of whether a write operation has taken place. AutoStore Operation The AutoStore operation is a unique feature of nvSRAM which automatically stores the SRAM data to QuantumTrap cells during power-down. This STORE makes use of an external capacitor (VCAP) and enables the device to safely STORE the data in the nonvolatile memory when power goes down. During normal operation, the device draws current from VCC to charge the capacitor connected to the VCAP pin. When the voltage on the VCC pin drops below VSWITCH during power-down, the device inhibits all memory accesses to nvSRAM and automatically performs a conditional STORE operation using the Page 4 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B charge from the VCAP capacitor. The AutoStore operation is not initiated if no write cycle has been performed since last RECALL. Note If a capacitor is not connected to VCAP pin, AutoStore must be disabled by issuing the AutoStore Disable instruction (AutoStore Disable (ASDISB) Instruction on page 15). If AutoStore is enabled without a capacitor on the VCAP pin, the device attempts an AutoStore operation without sufficient charge to complete the STORE. This will corrupt the data stored in nvSRAM, Status Register as well as the serial number and it will unlock the SNL bit. To resume normal functionality, the WRSR instruction must be issued to update the nonvolatile bits BP0, BP1, and WPEN in the Status Register. Figure 2 shows the proper connection of the storage capacitor (VCAP) for AutoStore operation. Refer to DC Electrical Characteristics on page 18 for the size of the VCAP. Note CY14MX064Q1B does not support AutoStore operation. You must perform Software STORE operation by using the SPI STORE instruction to secure the data. Figure 2. AutoStore Mode VCC 10 kOhm A RECALL operation transfers the data stored in the nonvolatile QuantumTrap elements to the SRAM. A RECALL may be initiated in two ways: Hardware RECALL, initiated on power-up and Software RECALL, initiated by a SPI RECALL instruction. Internally, RECALL is a two step procedure. First, the SRAM data is cleared. Next, the nonvolatile information is transferred into the SRAM cells. All memory accesses are inhibited while a RECALL cycle is in progress. The RECALL operation does not alter the data in the nonvolatile elements. Hardware RECALL (Power-Up) During power-up, when VCC crosses VSWITCH, an automatic RECALL sequence is initiated, which transfers the content of nonvolatile memory on to the SRAM. The data would previously have been stored on the nonvolatile memory through a STORE sequence. A Power-Up RECALL cycle takes tFA time to complete and the memory access is disabled during this time. Software RECALL Software RECALL allows you to initiate a RECALL operation to restore the content of nonvolatile memory on to the SRAM. A Software RECALL is issued by using the SPI instruction for RECALL. 0.1 uF VCC CS RECALL Operation A Software RECALL takes tRECALL time to complete during which all memory accesses to nvSRAM are inhibited. The controller must provide sufficient delay for the RECALL operation to complete before issuing any memory access instructions. VCAP Disabling and Enabling AutoStore VCAP VSS Software STORE Operation Software STORE enables the user to trigger a STORE operation through a special SPI instruction. STORE operation is initiated by executing STORE instruction irrespective of whether a write has been performed since the last NV operation. A STORE cycle takes tSTORE time to complete, during which all the memory accesses to nvSRAM are inhibited. The RDY bit of the Status Register may be polled to find the Ready or Busy status of the nvSRAM. After the tSTORE cycle time is completed, the SRAM is activated again for read and write operations. Document Number: 001-70382 Rev. *H If the application does not require the AutoStore feature, it can be disabled by using the ASDISB instruction. If this is done, the nvSRAM does not perform a STORE operation at power-down. AutoStore can be re enabled by using the ASENB instruction. However, these operations are not nonvolatile and if you need this setting to survive the power cycle, a STORE operation must be performed following AutoStore Disable or Enable operation. Note CY14MX064Q2B comes with the factory with autoStore enabled and CY14MX064Q1B/CY14MX064Q2B with 0x00 written in all cells. In CY14MX064Q1B, VCAP pin is not present and AutoStore option is not available. Note If AutoStore is disabled and VCAP is not required, then the VCAP pin must be left open. The VCAP pin must never be connected to ground. The Power-Up RECALL operation cannot be disabled in any case. Page 5 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Serial Peripheral Interface Serial Clock (SCK) SPI Overview Serial clock is generated by the SPI master and the communication is synchronized with this clock after CS goes LOW. The SPI is a four- pin interface with Chip Select (CS), Serial Input (SI), Serial Output (SO), and Serial Clock (SCK) pins. CY14MX064Q provides serial access to nvSRAM through SPI interface. The SPI bus on CY14MX064Q can run at speeds up to 40 MHz. The SPI is a synchronous serial interface which uses clock and data pins for memory access and supports multiple devices on the data bus. A device on SPI bus is activated using the CS pin. The relationship between chip select, clock, and data is dictated by the SPI mode. This device supports SPI modes 0 and 3. In both these modes, data is clocked into the nvSRAM on the rising edge of SCK starting from the first rising edge after CS goes active. The SPI protocol is controlled by opcodes. These opcodes specify the commands from the bus master to the slave device. After CS is activated the first byte transferred from the bus master is the opcode. Following the opcode, any addresses and data are then transferred. The CS must go inactive after an operation is complete and before a new opcode can be issued. The commonly used terms used in SPI protocol are given below: SPI Master The SPI master device controls the operations on a SPI bus. A SPI bus may have only one master with one or more slave devices. All the slaves share the same SPI bus lines and the master may select any of the slave devices using the CS pin. All the operations must be initiated by the master activating a slave device by pulling the CS pin of the slave LOW. The master also generates the SCK and all the data transmission on SI and SO lines are synchronized with this clock. CY14MX064Q enables SPI modes 0 and 3 for data communication. In both these modes, the inputs are latched by the slave device on the rising edge of SCK and outputs are issued on the falling edge. Therefore, the first rising edge of SCK signifies the arrival of the first bit (MSB) of SPI instruction on the SI pin. Further, all data inputs and outputs are synchronized with SCK. Data Transmission - SI/SO SPI data bus consists of two lines, SI and SO, for serial data communication. The SI is also referred to as Master Out Slave In (MOSI) and SO is referred to as Master In Slave Out (MISO). The master issues instructions to the slave through the SI pin, while the slave responds through the SO pin. Multiple slave devices may share the SI and SO lines as described earlier. CY14MX064Q has two separate pins for SI and SO, which can be connected with the master as shown in Figure 3 on page 7. Most Significant Bit (MSB) The SPI protocol requires that the first bit to be transmitted is the Most Significant Bit (MSB). This is valid for both address and data transmission. The 64-Kbit serial nvSRAM requires a 2-byte address for any read or write operation. However, since the address is only 13 bits, it implies that the first three bits which are fed in are ignored by the device. Although these three bits are ‘don’t care’, Cypress recommends that these bits are treated as 0s to enable seamless transition to higher memory densities. Serial Opcode SPI Slave The SPI slave device is activated by the master through the Chip Select line. A slave device gets the SCK as an input from the SPI master and all the communication is synchronized with this clock. SPI slave never initiates a communication on the SPI bus and acts on the instruction from the master. CY14MX064Q operates as a SPI slave and may share the SPI bus with other SPI slave devices. After the slave device is selected with CS going LOW, the first byte received is treated as the opcode for the intended operation. CY14MX064Q uses the standard opcodes for memory accesses. In addition to the memory accesses, it provides additional opcodes for the nvSRAM specific functions: STORE, RECALL, AutoStore Enable, and AutoStore Disable. Refer to Table 2 on page 9 for details. Chip Select (CS) If an invalid opcode is received, the opcode is ignored and the device ignores any additional serial data on the SI pin till the next falling edge of CS and the SO pin remains tri-stated. For selecting any slave device, the master needs to pull-down the corresponding CS pin. Any instruction can be issued to a slave device only while the CS pin is LOW. When the device is not selected, data through the SI pin is ignored and the serial output pin (SO) remains in a high impedance state. Note A new instruction must begin with the falling edge of CS. Therefore, only one opcode can be issued for each active Chip Select cycle. Document Number: 001-70382 Rev. *H Invalid Opcode Status Register CY14MX064Q has an 8-bit Status Register. The bits in the Status Register are used to configure the SPI bus. These bits are described in the Table 4 on page 10. Page 6 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Figure 3. System Configuration Using SPI nvSRAM SCK M OSI M IS O SCK SI SO SCK SI SO u C o n tro lle r CY14MX064Q CY14MX064Q CS HO LD CS HO LD CS1 HO LD 1 CS2 HO LD 2 SPI Modes CY14MX064Q may be driven by a microcontroller with its SPI peripheral running in either of the following two modes: ■ SPI Mode 0 (CPOL = 0, CPHA = 0) ■ SPI Mode 3 (CPOL = 1, CPHA = 1) For both these modes, the input data is latched in on the rising edge of SCK starting from the first rising edge after CS goes active. If the clock starts from a HIGH state (in mode 3), the first rising edge after the clock toggles, is considered. The output data is available on the falling edge of SCK. Figure 4. SPI Mode 0 CS 0 1 2 3 4 5 6 7 SCK SI 7 6 5 4 3 2 1 0 MSB LSB The two SPI modes are shown in Figure 4 and Figure 5. The status of clock when the bus master is in standby mode and not transferring data is: ■ SCK remains at 0 for Mode 0 ■ SCK remains at 1 for Mode 3 CPOL and CPHA bits must be set in the SPI controller for either Mode 0 or Mode 3. The device detects the SPI mode from the status of SCK pin when the device is selected by bringing the CS pin LOW. If SCK pin is LOW when the device is selected, SPI Mode 0 is assumed and if SCK pin is HIGH, it works in SPI Mode 3. Figure 5. SPI Mode 3 CS 0 2 3 4 5 6 7 SCK SI 7 MSB Document Number: 001-70382 Rev. *H 1 6 5 4 3 2 1 0 LSB Page 7 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B SPI Operating Features Power-Up Power-up is defined as the condition when the power supply is turned on and VCC crosses Vswitch voltage. As described earlier, at power-up nvSRAM performs a Power-Up RECALL operation for tFA duration during which, all memory accesses are disabled. The following are the device status after power-up. ■ Selected (Active power mode) if CS pin is LOW ■ Deselected (Standby power mode) if CS pin is HIGH ■ Not in the Hold condition ■ Status Register state: ❐ Write Enable (WEN) bit is reset to ‘0’. ❐ WPEN, BP1, BP0 unchanged from previous STORE operation. The WPEN, BP1, and BP0 bits of the Status Register are non-volatile bits and remain unchanged from the previous STORE operation. Document Number: 001-70382 Rev. *H Power-Down At power-down (continuous decay of VCC), when VCC drops from the normal operating voltage and below the VSWITCH threshold voltage, the device stops responding to any instruction sent to it. If a write cycle is in progress and the last data bit D0 has been received when the power goes down, it is allowed tDELAY time to complete the write. After this, all memory accesses are inhibited and a conditional AutoStore operation is performed (AutoStore is not performed if no writes have happened since the last RECALL cycle). This feature prevents inadvertent writes to nvSRAM from happening during power-down. However, to completely avoid the possibility of inadvertent writes during power-down, ensure that the device is deselected and is in standby power mode, and the CS follows the voltage applied on VCC. Active Power and Standby Power Modes When CS is LOW, the device is selected and is in the active power mode. The device consumes ICC current, as specified in DC Electrical Characteristics on page 18. When CS is HIGH, the device is deselected and the device goes into the standby power mode after tSB time if a STORE or RECALL cycle is not in progress. If a STORE/RECALL cycle is in progress, the device goes into the standby power mode after the STORE or RECALL cycle is completed. In the standby power mode, the current drawn by the device drops to ISB. Page 8 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B SPI Functional Description The CY14MX064Q uses an 8-bit instruction register. Instructions and their opcodes are listed in Table 2. All instructions, addresses, and data are transferred with the MSB first and start with a HIGH to LOW CS transition. There are, in all, 14 SPI instructions which provide access to most of the functions in nvSRAM. Further, the WP, and HOLD pins provide additional functionality driven through hardware. Table 2. Instruction Set Instruction Category Instruction Name Opcode Operation Status Register Control Instructions Status Register access RDSR 0000 0101 Read Status Register WRSR 0000 0001 Write Status Register WREN 0000 0110 Set write enable latch WRDI 0000 0100 Reset write enable latch READ 0000 0011 Read data from memory array WRITE 0000 0010 Write data to memory array STORE 0011 1100 Software STORE RECALL 0110 0000 Software RECALL ASENB 0101 1001 AutoStore Enable ASDISB 0001 1001 AutoStore Disable Sleep SLEEP 1011 1001 Sleep mode enable Serial number WRSN 1100 0010 Write serial number RDSN 1100 0011 Read serial number RDID 1001 1111 Read manufacturer JEDEC ID and product ID Write protection and block protection SRAM Read/Write Instructions Memory access Special NV Instructions nvSRAM special functions Special Instructions Device ID read Reserved Instructions Reserved 0001 1110 0000 1001 - Reserved - 0000 1011 1100 1001 1001 1001 The SPI instructions are divided based on their functionality in the following types: ❐ Status Register control instructions: • Status Register access: RDSR and WRSR instructions • Write protection and block protection: WREN and WRDI instructions along with WP pin and WEN, BP0, and BP1 bits ❐ SRAM read/write instructions • Memory access: READ and WRITE instructions Document Number: 001-70382 Rev. *H ❐ Special NV instructions • nvSRAM special instructions: STORE, RECALL, ASENB, and ASDISB ❐ Special instructions • SLEEP, WRSN, RDSN, RDID Page 9 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Status Register from the factory for WEN, BP0, BP1, bits 4 -5, SNL and WPEN is ‘0’. The Status Register bits are listed in Table 3. The Status Register consists of a Ready bit (RDY) and data protection bits BP1, BP0, WEN, and WPEN. The RDY bit can be polled to check the Ready or Busy status while a nvSRAM STORE or Software RECALL cycle is in progress. The Status Register can be modified by WRSR instruction and read by RDSR instruction. However, only the WPEN, BP1, and BP0 bits of the Status Register can be modified by using the WRSR instruction. The WRSR instruction has no effect on WEN and RDY bits. The default value shipped SNL (bit 6) of the Status Register is used to lock the serial number written using the WRSN instruction. The serial number can be written using the WRSN instruction multiple times while this bit is still '0'. When set to '1', this bit prevents any modification to the serial number. This bit is factory programmed to '0' and can only be written to once. After this bit is set to '1', it can never be cleared to '0'. Table 3. Status Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 WPEN (0) SNL (0) X (0) X (0) BP1 (0) BP0 (0) WEN (0) RDY Table 4. Status Register Bit Definition Bit Definition Description Bit 0 (RDY) Ready Read only bit indicates the ready status of device to perform a memory access. This bit is set to ‘1’ by the device while a STORE or Software RECALL cycle is in progress. Bit 1 (WEN) Write Enable WEN indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up. WEN = '1' --> Write enabled WEN = '0' --> Write disabled Bit 2 (BP0) Block Protect bit ‘0’ Used for block protection. For details see Table 5 on page 12. Bit 3 (BP1) Block Protect bit ‘1’ Used for block protection. For details see Table 5 on page 12. Bit 4-5 Don’t care These bits are non-writable and always return ‘0’ upon read. Bit 6 (SNL) Serial Number Lock Set to '1' for locking serial number Bit 7 (WPEN) Write Protect Enable bit Used for enabling the function of Write Protect Pin (WP). For details see Table 6 on page 12. Read Status Register (RDSR) Instruction The Read Status Register instruction provides access to the Status Register. This instruction is used to probe the Write Enable status of the device or the Ready status of the device. RDY bit is set by the device to 1 whenever a STORE or Software RECALL cycle is in progress. The block protection and WPEN bits indicate the extent of protection employed. This instruction is issued after the falling edge of CS using the opcode for RDSR. Write Status Register (WRSR) Instruction The WRSR instruction enables the user to write to the Status Register. However, this instruction cannot be used to modify bit 0 (RDY), bit 1 (WEN) and bits 4-5. The BP0 and BP1 bits can be used to select one of four levels of block protection. Further, WPEN bit must be set to ‘1’ to enable the use of Write Protect (WP) pin. Document Number: 001-70382 Rev. *H WRSR instruction is a write instruction and needs writes to be enabled (WEN bit set to ‘1’) using the WREN instruction before it is issued. The instruction is issued after the falling edge of CS using the opcode for WRSR followed by eight bits of data to be stored in the Status Register. WRSR instruction can be used to modify only bits 2, 3, 6 and 7 of the Status Register. Note In CY14MX064Q, the values written to Status Register are saved to nonvolatile memory only after a STORE operation. If AutoStore is disabled (or while using CY14MX064Q1B), any modifications to the Status Register must be secured by performing a Software STORE operation. Note CY14MX064Q2B does not have WP pin. Any modification to bit 7 of the Status Register has no effect on the functionality of CY14MX064Q2B. Page 10 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Figure 6. Read Status Register (RDSR) Instruction Timing CS 0 1 2 3 4 5 6 7 0 1 0 1 2 3 4 5 6 7 SCK Op-Code SI 0 0 0 0 0 1 0 HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 MSB LSB Data Figure 7. Write Status Register (WRSR) Instruction Timing CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Data in Opcode SI SO 0 0 0 0 0 0 0 1 D7 X MSB X X D3 D2 X X LSB HI-Z Write Protection and Block Protection CY14MX064Q provides features for both software and hardware write protection using WRDI instruction and WP. Additionally, this device also provides block protection mechanism through BP0 and BP1 pins of the Status Register. The write enable and disable status of the device is indicated by WEN bit of the Status Register. The write instructions (WRSR, WRITE and WRSN) and nvSRAM special instruction (STORE, RECALL, ASENB and ASDISB) need the write to be enabled (WEN bit = ‘1’) before they can be issued. Figure 8. WREN Instruction CS 0 1 2 3 4 5 6 7 SCK 0 SI 0 0 0 0 1 1 0 HI-Z SO Write Enable (WREN) Instruction Write Disable (WRDI) Instruction On power-up, the device is always in the write disable state. The following WRITE, WRSR, WRSN, or nvSRAM special instruction must therefore be preceded by a Write Enable instruction. If the device is not write enabled (WEN = ‘0’), it ignores the write instructions and returns to the standby state when CS is brought HIGH. A new CS falling edge is required to re-initiate serial communication. The instruction is issued following the falling edge of CS. When this instruction is used, the WEN bit of Status Register is set to ‘1’. WEN bit defaults to ‘0’ on power-up. Write Disable instruction disables the write by clearing the WEN bit to ‘0’ in order to protect the device against inadvertent writes. This instruction is issued following the falling edge of CS followed by opcode for WRDI instruction. The WEN bit is cleared on the rising edge of CS following a WRDI instruction. Note After completion of a write instruction (WRSR, WRITE, WRSN) or nvSRAM special instruction (STORE, RECALL, ASENB, and ASDISB) instruction, WEN bit is cleared to ‘0’. This is done to provide protection from any inadvertent writes. Therefore, WREN instruction needs to be used before a new write instruction is issued. Figure 9. WRDI Instruction CS 0 2 3 4 5 6 7 SCK SI SO Document Number: 001-70382 Rev. *H 1 0 0 0 0 0 1 0 0 HI-Z Page 11 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Block Protection Memory Access Block protection is provided using the BP0 and BP1 pins of the Status Register. These bits can be set using WRSR instruction and probed using the RDSR instruction. The nvSRAM is divided into four array segments. One-quarter, one-half, or all of the memory segments can be protected. Any data within the protected segment is read only. Table 5 shows the function of Block Protect bits. All memory accesses are done using the READ and WRITE instructions. These instructions cannot be used while a STORE or RECALL cycle is in progress. A STORE cycle in progress is indicated by the RDY bit of the Status Register. Table 5. Block Write Protect Bits Level Status Register Bits Array Addresses Protected BP1 BP0 0 0 0 None 1 (1/4) 0 1 0x1800–0x1FFF 2 (1/2) 1 0 0x1000–0x1FFF 3 (All) 1 1 0x0000–0x1FFF Hardware Write Protection (WP) The write protect pin (WP) is used to provide hardware write protection. WP pin enables all normal read and write operations when held HIGH. When the WP pin is brought LOW and WPEN bit is ‘1’, all write operations to the Status Register are inhibited. The hardware write protection function is blocked when the WPEN bit is ‘0’. This allows you to install the device in a system with the WP pin tied to ground, and still write to the Status Register. WP pin can be used along with WPEN and Block Protect bits (BP1 and BP0) of the Status Register to inhibit writes to memory. When WP pin is LOW and WPEN is set to ‘1’, any modifications to the Status Register are disabled. Therefore, the memory is protected by setting the BP0 and BP1 bits and the WP pin inhibits any modification of the Status Register bits, providing hardware write protection. Note WP going LOW when CS is still LOW has no effect on any of the ongoing write operations to the Status Register. Note CY14MX064Q2B does not have WP pin and therefore does not provide hardware write protection. Table 6 summarizes all the protection features of this device. Table 6. Write Protection Operation WPEN WP Unprotected Status WEN Protected Blocks Blocks Register X X 0 Protected Protected Protected 0 X 1 Protected Writable Writable 1 LOW 1 Protected Writable Protected 1 HIGH 1 Protected Writable Writable Document Number: 001-70382 Rev. *H Read Sequence (READ) Instruction The read operations on this device are performed by giving the instruction on the SI pin and reading the output on SO pin. The following sequence needs to be followed for a read operation: After the CS line is pulled LOW to select a device, the read opcode is transmitted through the SI line followed by two bytes of address (A12-A0). The most significant address bits (A15-A13) are don’t cares. After the last address bit is transmitted on the SI pin, the data (D7–D0) at the specific address is shifted out on the SO line on the falling edge of SCK starting with D7. Any other data on SI line after the last address bit is ignored. CY14MX064Q allows reads to be performed in bursts through SPI which can be used to read consecutive addresses without issuing a new READ instruction. If only one byte is to be read, the CS line must be driven HIGH after one byte of data comes out. However, the read sequence may be continued by holding the CS line LOW and the address is automatically incremented and data continues to shift out on SO pin. When the last data memory address (0x1FFF) is reached, the address rolls over to 0x0000 and the device continues to read. Write Sequence (WRITE) Instruction The write operations on this device are performed through the SI pin. To perform a write operation, if the device is write disabled, then the device must first be write enabled through the WREN instruction. When the writes are enabled (WEN = ‘1’), WRITE instruction is issued after the falling edge of CS. A WRITE instruction constitutes transmitting the WRITE opcode on SI line followed by two bytes of address (A12 - A0) and the data (D7-D0) which is to be written. The most significant address bits (A15 A13) are don’t cares. CY14MX064Q enables writes to be performed in bursts through SPI which can be used to write consecutive addresses without issuing a new WRITE instruction. If only one byte is to be written, the CS line must be driven HIGH after the D0 (LSB of data) is transmitted. However, if more bytes are to be written, CS line must be held LOW and address is incremented automatically. The following bytes on the SI line are treated as data bytes and written in the successive addresses. When the last data memory address (0x1FFF) is reached, the address rolls over to 0x0000 and the device continues to write. The WEN bit is reset to ‘0’ on completion of a WRITE sequence. Note When a burst write reaches a protected block address, it continues the address increment into the protected space but does not write any data to the protected memory. If the address roll over takes the burst write to unprotected space, it resumes writes. The same operation is true if a burst write is initiated within a write protected block. Page 12 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Figure 10. Read Instruction Timing CS 1 2 3 4 5 6 0 7 1 2 3 4 5 6 0 0 0 0 0 12 13 14 15 0 1 2 3 4 5 6 7 13-bit Address Op-Code SI 7 ~ ~ ~ ~ 0 SCK 0 1 1 X X A12 A11 A10 A9 A8 X MSB A3 A2 A1 A0 LSB HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 MSB LSB Data Figure 11. Burst Mode Read Instruction Timing 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 Op-Code 0 0 0 0 0 0 1 2 3 4 5 6 7 0 7 0 1 2 3 4 5 6 7 13-bit Address 0 1 1 X X X A12 A11 A10 A9 A8 MSB ~ ~ SI 12 13 14 15 ~ ~ 0 SCK ~ ~ CS A3 A2 A1 A0 LSB Data Byte N ~ ~ Data Byte 1 HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 D7 D0 D7 D6 D5 D4 D3 D2 D1 D0 MSB MSB LSB LSB Figure 12. Write Instruction Timing CS 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 Op-Code SI 0 0 0 0 0 0 ~ ~ ~ ~ 0 SCK 12 13 14 15 0 1 2 3 4 5 6 7 13-bit Address 1 0 X X X 12 11 10 9 MSB SO Document Number: 001-70382 Rev. *H 8 3 2 1 0 D7 D6 D5 D4 D3 D2 D1 D0 LSB MSB Data LSB HI-Z Page 13 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Figure 13. Burst Mode Write Instruction Timing CS 2 3 4 5 6 0 7 1 2 3 4 5 6 7 12 13 14 15 0 1 2 3 4 5 6 7 0 7 ~ ~ 1 ~ ~ 0 SCK 0 1 0 0 0 0 0 1 0 X X X A12 A11 A10 A9 A8 MSB 4 5 6 7 ~ ~ 0 13-bit Address ~ ~ SI 3 Data Byte N Data Byte 1 Op-Code 2 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D0 D7 D6 D5 D4 D3 D2 D1 D0 LSB MSB LSB HI-Z SO nvSRAM Special Instructions CY14MX064Q provides four special instructions which enables access to the nvSRAM specific functions: STORE, RECALL, ASDISB, and ASENB. Table 7 lists these instructions. Table 7. nvSRAM Special Instructions Function Name STORE RECALL ASENB ASDISB Opcode 0011 1100 0110 0000 0101 1001 0001 1001 Operation Software STORE Software RECALL AutoStore Enable AutoStore Disable Software STORE (STORE) Instruction To issue this instruction, the device must be write enabled (WEN bit = ‘1’). The instruction is performed by transmitting the STORE opcode on the SI pin following the falling edge of CS. The WEN bit is cleared on the positive edge of CS following the STORE instruction. Figure 14. Software STORE Operation CS 1 2 3 4 5 6 Figure 15. Software RECALL Operation CS 0 1 2 3 7 SCK 4 5 6 7 SCK SI 0 1 1 0 0 0 0 0 HI-Z SO When a STORE instruction is executed, nvSRAM performs a Software STORE operation. The STORE operation is performed irrespective of whether a write has taken place since the last STORE or RECALL operation. 0 The instruction is performed by transmitting the RECALL opcode on the SI pin following the falling edge of CS. The WEN bit is cleared on the positive edge of CS following the RECALL instruction. AutoStore Enable (ASENB) Instruction The AutoStore Enable instruction enables the AutoStore on CY14MX064Q2B. This setting is not nonvolatile and needs to be followed by a STORE sequence to survive the power cycle. To issue this instruction, the device must be write enabled (WEN = ‘1’). The instruction is performed by transmitting the ASENB opcode on the SI pin following the falling edge of CS. The WEN bit is cleared on the positive edge of CS following the ASENB instruction. Note If ASDISB and ASENB instructions are executed in CY14MX064Q2B, the device is busy for the duration of software sequence processing time (tSS). However, ASDISB and ASENB instructions have no effect on CY14MX064Q1B as AutoStore is internally disabled. Figure 16. AutoStore Enable Operation SI SO 0 0 1 1 1 1 0 0 CS 0 HI-Z Software RECALL (RECALL) Instruction When a RECALL instruction is executed, nvSRAM performs a Software RECALL operation. To issue this instruction, the device must be write enabled (WEN = ‘1’). 2 3 4 5 6 7 SCK SI SO Document Number: 001-70382 Rev. *H 1 0 1 0 1 1 0 0 1 HI-Z Page 14 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B AutoStore Disable (ASDISB) Instruction to the SRAM has been performed since the last STORE or RECALL cycle. AutoStore is enabled by default in CY14MX064Q2B. The ASDISB instruction disables the AutoStore. This setting is not nonvolatile and needs to be followed by a STORE sequence to survive the power cycle. To issue this instruction, the device must be write enabled (WEN = ‘1’). The instruction is performed by transmitting the ASDISB opcode on the SI pin following the falling edge of CS. The WEN bit is cleared on the positive edge of CS following the ASDISB instruction. Figure 18. Sleep Mode Entry t SLEEP CS 0 SI 1 CS 1 2 3 4 5 6 7 0 3 4 5 6 7 1 1 1 0 0 1 HI-Z SO SCK Serial Number 0 SI 2 SCK Figure 17. AutoStore Disable Operation 0 1 0 0 1 1 0 0 1 The serial number is an 8 byte programmable memory space provided to you uniquely identify this device. It typically consists of a two byte Customer ID, followed by five bytes of unique serial number and one byte of CRC check. However, nvSRAM does not calculate the CRC and it is up to the system designer to utilize the eight byte memory space in whatever manner desired. The default value for eight byte locations are set to ‘0x00’. HI-Z SO Special Instructions SLEEP Instruction SLEEP instruction puts the nvSRAM in sleep mode. When the SLEEP instruction is issued, the nvSRAM takes tSS time to process the SLEEP request. Once the SLEEP command is successfully registered and processed, the nvSRAM performs a STORE operation to secure the data to nonvolatile memory and then enters into SLEEP mode. The device starts consuming IZZ current after tSLEEP time from the instance when SLEEP instruction is registered. The device is not accessible for normal operations after SLEEP instruction is issued. Once in sleep mode, the SCK and SI pins are ignored and SO will be Hi-Z but device continues to monitor the CS pin. To wake the nvSRAM from the sleep mode, the device must be selected by toggling the CS pin from HIGH to LOW. The device wakes up and is accessible for normal operations after tWAKE duration after a falling edge of CS pin is detected. WRSN (Serial Number Write) Instruction The serial number can be written using the WRSN instruction. To write serial number the write must be enabled using the WREN instruction. The WRSN instruction can be used in burst mode to write all the 8 bytes of serial number. The serial number is locked using the SNL bit of the Status Register. Once this bit is set to '1', no modification to the serial number is possible. After the SNL bit is set to '1', using the WRSN instruction has no effect on the serial number. A STORE operation (AutoStore or Software STORE) is required to store the serial number in nonvolatile memory. If AutoStore is disabled, you must perform a Software STORE operation to secure and lock the serial Number. If SNL bit is set to ‘1’ and is not stored (AutoStore disabled), the SNL bit and serial number defaults to ‘0’ at the next power cycle. If SNL bit is set to ‘1’ and is stored, the SNL bit can never be cleared to ‘0’. This instruction requires the WEN bit to be set before it can be executed. The WEN bit is reset to '0' after completion of this instruction. Note Whenever nvSRAM enters into sleep mode, it initiates nonvolatile STORE cycle which results in an endurance cycle per sleep command execution. A STORE cycle starts only if a write Figure 19. WRSN Instruction 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK SI 1 1 0 0 0 0 1 0 Document Number: 001-70382 Rev. *H Byte - 1 D7 D6 D5 D4 D3 D2 D1 D0 MSB SO 56 57 58 59 60 61 62 63 Byte - 8 Op-Code ~ ~ 0 ~ ~ CS D7 D6 D5 D4 D3 D2 D1 D0 8-Byte Serial Number LSB HI-Z Page 15 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B RDSN (Serial Number Read) Instruction the device does not loop back. RDSN instruction can be issued by shifting the op-code for RDSN in through the SI pin of nvSRAM after CS goes LOW. This is followed by nvSRAM shifting out the eight bytes of serial number through the SO pin. The serial number is read using RDSN instruction. A serial number read may be performed in burst mode to read all the eight bytes at once. After the last byte of serial number is read, Figure 20. RDSN Instruction CS 1 2 1 1 0 3 4 5 6 7 0 1 2 3 4 5 6 7 56 57 58 59 60 61 62 63 ~ ~ 0 SCK Op-Code SI 0 0 0 1 1 Byte - 1 SO D7 D6 D5 D4 D3 D2 D1 D0 MSB ~ ~ Byte - 8 HI-Z D7 D6 D5 D4 D3 D2 D1 D0 LSB 8-Byte Serial Number Device ID Device ID is 4-byte read only code identifying a type of product uniquely. This includes the product family code, configuration and density of the product. Table 8. Device ID Device ID description Device Device ID (4 bytes) CY14MB064Q1B CY14MB064Q2B CY14ME064Q1B CY14ME064Q2B 0x06810889 0x06818809 0x06811089 0x06819009 31–21 (11 bits) Manufacture ID 00000110100 00000110100 00000110100 00000110100 20–7 (14 bits) Product ID 00001000010001 00001100010000 00001000100001 00001100100000 6–3 (4 bits) Density ID 0001 0001 0001 0001 2–0 (3 bits) Die Rev 001 001 001 001 The device ID is divided into four parts as shown in Table 8: 2. Product ID (14 bits) 1. Manufacturer ID (11 bits) The product ID is defined as shown in the Table 8. This is the JEDEC assigned manufacturer ID for Cypress. JEDEC assigns the manufacturer ID in different banks. The first three bits of the manufacturer ID represent the bank in which ID is assigned. The next eight bits represent the manufacturer ID. 3. Density ID (4 bits) Cypress’s manufacturer ID is 0x34 in bank 0. Therefore the manufacturer ID for all Cypress nvSRAM products is: Cypress ID - 000_0011_0100 Document Number: 001-70382 Rev. *H The 4 bit density ID is used as shown in Table 8 for indicating the 64 Kb density of the product. 4. Die Rev (3 bits) This is used to represent any major change in the design of the product. The die rev is defined as shown in the Table 8. Page 16 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B RDID (Device ID Read) Instruction This instruction is used to read the JEDEC assigned manufacturer ID and product ID of the device. This instruction can be used to identify a device on the bus. RDID instruction can be issued by shifting the op-code for RDID in through the SI pin of nvSRAM after CS goes LOW. This is followed by nvSRAM shifting out the four bytes of device ID through the SO pin. Figure 21. RDID instruction CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCK Op-Code SI 1 0 0 1 1 1 1 1 Byte - 4 SO HI-Z Byte - 3 Byte - 2 Byte - 1 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 LSB MSB 4-Byte Device ID HOLD Pin Operation This pin can be used by the master with the CS pin to pause the serial communication by bringing the pin HOLD LOW and deselecting an SPI slave to establish communication with another slave device, without the serial communication being reset. The communication may be resumed at a later point by selecting the device and setting the HOLD pin HIGH. Document Number: 001-70382 Rev. *H Figure 22. HOLD Operation CS SCK ~ ~ ~ ~ The HOLD pin is used to pause the serial communication. When the device is selected and a serial sequence is underway, HOLD is used to pause the serial communication with the master device without resetting the ongoing serial sequence. To pause, the HOLD pin must be brought LOW when the SCK pin is LOW. To resume serial communication, the HOLD pin must be brought HIGH when the SCK pin is LOW (SCK may toggle during HOLD). While the device serial communication is paused, inputs to the SI pin are ignored and the SO pin is in the high impedance state. HOLD SO Page 17 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Maximum Ratings Transient voltage (< 20 ns) on any pin to ground potential ................. –2.0 V to VCC + 2.0 V Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Package power dissipation capability (TA = 25 °C) ................................................. 1.0 W Storage temperature ................................ –65 C to +150 C Maximum accumulated storage time At 150 C ambient temperature ...................... 1000 h At 85 C ambient temperature .................... 20 Years Maximum junction temperature ................................. 150 C Surface mount lead soldering temperature (3 seconds) ......................................... +260 C DC output current (1 output at a time, 1s duration) .... 15 mA Static discharge voltage (per MIL-STD-883, Method 3015) .......................... > 2001 V Supply voltage on VCC relative to VSS CY14MB064Q: VCC = 2.7 V to 3.6 V ...........–0.5 V to +4.1 V CY14ME064Q: VCC = 4.5 V to 5.5 V ...........–0.5 V to +7.0 V DC voltage applied to outputs in High Z state .................................... –0.5 V to VCC + 0.5 V Operating Range Input voltage ....................................... –0.5 V to VCC + 0.5 V CY14MB064Q Latch up current ..................................................... > 140 mA Device Ambient Temperature Range Industrial VCC –40 C to +85 C 2.7 V to 3.6 V CY14ME064Q 4.5 V to 5.5 V DC Electrical Characteristics Over the Operating Range Parameter Description VCC Power supply Test Conditions CY14MB064Q CY14ME064Q fSCK = 40 MHz; Values obtained CY14MB064Q without output loads CY14ME064Q (IOUT = 0 mA) All inputs don’t care, VCC = Max Average current for duration tSTORE All inputs cycling at CMOS levels. Values obtained without output loads (IOUT = 0 mA) All inputs don't care. Average current for duration tSTORE CY14MB064Q CS > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V). CY14ME064Q Standby current level after nonvolatile cycle is complete. Inputs are static. fSCK = 0 MHz. tSLEEP time after SLEEP Instruction is registered. All inputs are static and configured at CMOS logic level. ICC1 Average VCC current ICC2 ISB Average VCC current during STORE Average VCC current, fSCK = 1 MHz, VCC = VCC(Typ), 25 °C Average VCAP current during AutoStore cycle VCC standby current IZZ Sleep mode current IIX IOZ VIH VIL VOH Input leakage current Off-state output leakage current Input HIGH voltage Input LOW voltage Output HIGH Voltage IOUT = –2 mA VOL VCAP[4] Output LOW voltage Storage capacitor IOUT = 4 mA Between VCAP pin and VSS ICC3 ICC4 Min 2.7 4.5 – – Typ [3] 3.0 5.0 – – Max 3.6 5.5 3 4 Unit V V mA mA – – 3 mA – – 1 mA – – 3 mA – – – – 120 150 A A – – 8 A –1 –1 – – +1 +1 A A – – – – – 47 VCC + 0.5 0.8 – – 0.4 180 V V V 2.0 Vss – 0.5 CY14MB064Q 2.4 CY14ME064Q VCC – 0.4 – 42 V F Notes 3. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested. 4. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor on VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore it is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options. Document Number: 001-70382 Rev. *H Page 18 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B DC Electrical Characteristics (continued) Over the Operating Range Parameter Description VVCAP[5, 6] Maximum voltage driven on VCAP pin by the device Test Conditions VCC = Max CY14MB064Q CY14ME064Q Min – – Typ [3] Max – VCC – VCC– 0.5 Unit V Data Retention and Endurance Over the Operating Range Parameter Description DATAR Data retention NVC Nonvolatile STORE operations Min Unit 20 Years 1,000 K Max Unit 7 pF 7 pF Test Conditions 8-pin SOIC Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. 101.08 C/W 37.86 C/W Capacitance Parameter [6] Description CIN Input capacitance COUT Output pin capacitance Test Conditions TA = 25 C, f = 1 MHz, VCC = VCC(Typ) Thermal Resistance Parameter [6] JA JC Description Thermal resistance (junction to ambient) Thermal resistance (junction to case) Notes 5. Maximum voltage on VCAP pin (VVCAP) is provided for guidance when choosing the VCAP capacitor. The voltage rating of the VCAP capacitor across the operating temperature range should be higher than the VVCAP voltage. 6. These parameters are guaranteed by design and are not tested. Document Number: 001-70382 Rev. *H Page 19 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B AC Test Loads and Waveforms Figure 23. AC Test Loads and Waveforms For 3 V (CY14MB064Q1B/CY14MB064Q2B): 577 577 3.0 V 3.0 V R1 For Tri-state specs R1 OUTPUT OUTPUT R2 789 30 pF R2 789 5 pF For 5 V (CY14ME064Q1B/CY14ME064Q2B): 963 963 5.0 V 5.0 V R1 For Tri-state specs R1 OUTPUT OUTPUT 30 pF R2 512 5 pF R2 512 AC Test Conditions Input pulse levels.................................................... 0 V to 3 V Input rise and fall times (10% to 90%)......................... < 3 ns Input and output timing reference levels........................ 1.5 V Document Number: 001-70382 Rev. *H Page 20 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B AC Switching Characteristics Over the Operating Range Parameters [7] Cypress Parameter Alt. Parameter fSCK fSCK tCL[8] tWL tCH[8] tWH tCS tCE tCSS tCES tCEH tCSH tSD tSU tHD tH tHH tHD tSH tCD tCO tV tHZ tHHZ[8] [8] tHLZ tLZ tOH tHO tHZCS[8] tDIS 40 MHz Description Clock frequency, SCK Clock pulse width LOW Clock pulse width HIGH CS HIGH time CS setup time CS hold time Data in setup time Data in hold time HOLD hold time HOLD setup time Output Valid HOLD to output HIGH Z HOLD to output LOW Z Output hold time Output disable time Min Max – 11 11 20 10 10 5 5 5 5 – – – 0 – 40 – – – – – – – – – 9 15 15 – 20 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns Switching Waveforms Figure 24. Synchronous Data Timing (Mode 0) tCS CS tCSS tCH tCL tCSH SCK tSD SI tHD VALID IN VALID IN VALID IN tOH tCO SO HI-Z tHZCS HI-Z ~ ~ ~ ~ Figure 25. HOLD Timing CS SCK tHH tHH tSH tSH HOLD tHHZ tHLZ SO Notes 7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH and load capacitance shown in Figure 23. 8. These parameters are guaranteed by design and are not tested. Document Number: 001-70382 Rev. *H Page 21 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B AutoStore or Power-Up RECALL Over the Operating Range Parameter tFA [9] CY14MX064Q Min Max – 20 Description Power-Up RECALL duration tSTORE [10] Unit ms STORE cycle duration – 8 ms tDELAY VSWITCH Time allowed to complete SRAM write cycle – 25 ns tVCCRISE[12] tWAKE tSLEEP tSB [12] VCC rise time – – 150 2.65 4.40 – V V s – – – 20 8 100 ms ms µs [11, 12] Low voltage trigger level CY14MB064Q CY14ME064Q Time for nvSRAM to wake up from SLEEP mode Time to enter SLEEP mode after issuing SLEEP instruction Time to enter into standby mode after CS going HIGH Switching Waveforms Figure 26. AutoStore or Power-Up RECALL [13] VCC VSWITCH t VCCRISE Note 10 10 t STORE Note tSTORE AutoStore tDELAY tDELAY POWERUP RECALL tFA tFA Read & Write Inhibited (RWI) POWER-UP RECALL Read & Write BROWN OUT AutoStore POWER-UP RECALL Read & Write POWER DOWN AutoStore Notes 9. tFA starts from the time VCC rises above VSWITCH. 10. If an SRAM write has not taken place since the last nonvolatile cycle, AutoStore is not initiated. 11. On a Software STORE / RECALL, AutoStore Enable / Disable and AutoStore initiation, SRAM operation continues to be enabled for time tDELAY. 12. These parameters are guaranteed by design and are not tested. 13. Read and Write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH. Document Number: 001-70382 Rev. *H Page 22 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Software Controlled STORE and RECALL Cycles Over the Operating Range CY14MX064Q Parameter tRECALL tSS [14, 15] Description Unit Min Max RECALL duration – 600 s Soft sequence processing time – 500 s Switching Waveforms Figure 27. Software STORE Cycle [15] CS CS 0 1 2 3 4 5 6 7 0 SCK SI Figure 28. Software RECALL Cycle [15] 1 2 3 4 5 6 7 SCK 0 0 1 1 1 1 0 0 SI 0 1 1 0 0 0 0 0 tRECALL tSTORE HI-Z RWI RDY RDY Figure 29. AutoStore Enable Cycle CS 0 1 2 3 4 5 6 Figure 30. AutoStore Disable Cycle CS 7 0 SCK SI HI-Z RWI 1 2 3 4 5 6 7 SCK 0 1 0 1 1 0 0 1 SI 0 0 0 1 1 0 0 1 tSS RWI tSS HI-Z RDY RWI HI-Z RDY Notes 14. This is the amount of time it takes to take action on a soft sequence command. Vcc power must remain HIGH to effectively register command. 15. Commands such as STORE and RECALL lock out I/O until operation is complete which further increases this time. See the specific command. Document Number: 001-70382 Rev. *H Page 23 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Ordering Information Package Diagram Ordering Code CY14MB064Q1B-SXI Operating Range Package Type Industrial 51-85066 8-pin SOIC (with WP) CY14MB064Q1B-SXIT 8-pin SOIC (with WP) CY14ME064Q2B-SXI 8-pin SOIC (with VCAP) CY14ME064Q2B-SXIT 8-pin SOIC (with VCAP) The above part is Pb-free. This table contains final information. Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 14 M B 064 Q 1 B - S X I T Option: T - Tape and Reel Blank - Std. Temperature: I - Industrial (–40 °C to 85 °C) Pb-free Package: S - 8-pin SOIC Die revision: Blank - No Rev B - 2nd Rev 1 - With WP 2 - With VCAP Q - Serial (SPI) nvSRAM Density: 064 - 64 Kb Metering Voltage: B - 3.0 V E - 5.0 V 14 - nvSRAM Cypress Document Number: 001-70382 Rev. *H Page 24 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Package Diagrams Figure 31. 8-pin SOIC (150 mils) Package Outline, 51-85066 51-85066 *F Document Number: 001-70382 Rev. *H Page 25 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Acronyms Acronym Document Conventions Description Units of Measure CPHA clock phase CPOL clock polarity °C degree Celsius CMOS complementary metal oxide semiconductor Hz hertz CRC cyclic redundancy check kHz kilohertz EEPROM electrically erasable programmable read-only memory k kilohm EIA electronic industries alliance MHz megahertz I/O input/output A microampere JEDEC joint electron devices engineering council mA milliampere LSB least significant bit F microfarad MSB most significant bit s microsecond nvSRAM nonvolatile static random access memory ms millisecond RWI read and write inhibit ns nanosecond RoHS restriction of hazardous substances ohm SNL serial number lock % percent SPI serial peripheral interface pF picofarad SONOS silicon-oxide-nitride-oxide semiconductor V volt SOIC small outline integrated circuit W watt SRAM static random access memory Document Number: 001-70382 Rev. *H Symbol Unit of Measure Page 26 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Document History Page Document Title: CY14MB064Q1B/CY14MB064Q2B, CY14ME064Q1B/CY14ME064Q2B, 64-Kbit (8 K × 8) SPI nvSRAM Document Number: 001-70382 Orig. of Submission Rev. ECN No. Description of Change Change Date ** 3291153 GVCH 06/23/2011 New data sheet *A 3403128 GVCH 10/12/2011 Updated SPI Operating Features (Updated Power-Up (description)). Updated SPI Functional Description (Updated Table 2). Updated Special Instructions (Updated SLEEP Instruction (description), updated Figure 18). *B 3514367 GVCH 02/01/2012 Removed Best Practices. Updated Ordering Information (Added CY14MB064Q2B-SXIT, CY14MB064Q1B-SXIT, CY14ME064Q2B-SXIT and CY14ME064Q1B-SXIT). *C 3539393 GVCH 03/16/2012 Updated AutoStore or Power-Up RECALL (Referred Note 12 in tSB parameter). *D 3605955 GVCH 05/02/2012 No technical update *E 3702613 GVCH 08/03/2012 Updated DC Electrical Characteristics (Added VVCAP parameter and its details, added Note 5 and referred the same note in VVCAP parameter, also referred Note 6 in VVCAP parameter). *F 3759535 GVCH 09/28/2012 Updated Maximum Ratings (Removed “Ambient temperature with power applied” and included “Maximum junction temperature”). *G 3823702 GVCH 11/28/2012 Changed status from “Preliminary” to “Final”. Updated Ordering Information (Updated part numbers). *H 3988751 GVCH 05/06/2013 Updated Package Diagrams: spec 51-85066 – Changed revision from *E to *F. Document Number: 001-70382 Rev. *H Page 27 of 28 CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive psoc.cypress.com/solutions cypress.com/go/clocks PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2011-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-70382 Rev. *H Revised May 6, 2013 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 28 of 28