CAT5113 100-Tap Digitally Programmable Potentiometer (DPP™) FEATURES DESCRIPTION 100-position linear taper potentiometer The CAT5113 is a single digitally programmable potentiometer (DPP™) designed as a electronic replacement for mechanical potentiometers. Ideal for automated adjustments on high volume production lines, they are also well suited for applications where equipment requiring periodic adjustment is either difficult to access or located in a hazardous or remote environment. Non-volatile EEPROM wiper storage 10nA ultra-low standby current Single supply operation: 2.5V – 6.0V Increment up/down serial interface Resistance values: 1kΩ, 10kΩ, 50kΩ and 100kΩ Available in PDIP, SOIC, TSSOP and MSOP packages The CAT5113 contains a 100-tap series resistor array connected between two terminals RH and RL. An up/ down counter and decoder that are controlled by three input pins, determines which tap is connected to the wiper, RW. The wiper setting, stored in nonvolatile memory, is not lost when the device is powered down and is automatically reinstated when power is returned. The wiper can be adjusted to test new system values without affecting the stored setting. Wiper-control of the CAT5113 is accomplished with ¯¯ , U/D ¯ , and INC ¯¯¯ . The INC ¯¯¯ three input control pins, CS input increments the wiper in the direction which is ¯ input. The CS ¯¯ determined by the logic state of the U/D input is used to select the device and also store the wiper position prior to power down. APPLICATIONS Automated product calibration Remote control adjustments Offset, gain and zero control Tamper-proof calibrations Contrast, brightness and volume controls Motor controls and feedback systems Programmable analog functions The digitally programmable potentiometer can be used as a three-terminal resistive divider or as a twoterminal variable resistor. For Ordering Information details, see page 12. FUNCTIONAL DIAGRAM U/D INC CS VCC 29 U/D INC RH 30 RH Control and Memory RH 31 5-BIT UP/DOWN COUNTER 5-BIT NONVOLATILE MEMORY ONE 28 OF THIRTY TWO DECODER RW CS TRANSFER GATES RESISTOR ARRAY RW 2 Power On Recall GND RL VCC GND STORE AND RECALL CONTROL CIRCUITRY 1 0 RL RW General © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice Detailed 1 RL Electronic Potentiometer Implementation Doc. No. MD-2009 Rev. T CAT5113 PIN CONFIGURATION PDIP 8-Lead (L) SOIC 8 Lead (V) MSOP 8 Lead (Z) PIN DESCRIPTIONS Name Function TSSOP 8 Lead (Y) ¯¯¯ 1 INC 8 VCC ¯¯ 1 CS 8 RL ¯ 2 U/D ¯¯ 7 CS VCC 2 7 RWB 6 RL ¯¯¯ 3 INC 5 RWB ¯ 4 U/D RH 3 CAT GND 4 CAT ¯¯¯ INC ¯ U/D Increment Control RH Potentiometer High Terminal Up/Down Control GND Ground 6 GND 5 RH RW Buffered Wiper Terminal RL Potentiometer Low Terminal ¯¯ CS Chip Select VCC Supply Voltage PIN DESCRIPTION ¯¯¯ : Increment Control Input INC ¯¯¯ input moves the wiper in the up or down The INC ¯ input. direction determined by the condition of the U/D ¯¯¯ and U/D ¯ inputs will not high state, activity on the INC affect or change the position of the wiper. ¯ : Up/Down Control Input U/D ¯ input controls the direction of the wiper The U/D ¯¯ is low, any movement. When in a high state and CS ¯¯¯ will cause the wiper to high-to-low transition on INC move one increment toward the RH terminal. When in ¯¯ is low, any high-to-low transition a low state and CS ¯¯¯ will cause the wiper to move one increment on INC towards the RL terminal. The CAT5113 operates like a digitally controlled potentiometer with RH and RL equivalent to the high and low terminals and RW equivalent to the mecha– nical potentiometer's wiper. There are 100 available tap positions including the resistor end points, RH and RL. There are 99 resistor elements connected in series between the RH and RL terminals. The wiper terminal is connected to one of the 100 taps and ¯¯¯, U/D ¯ and CS ¯¯ . These controlled by three inputs, INC inputs control a seven-bit up/down counter whose output is decoded to select the wiper position. The selected wiper position can be stored in non-volatile ¯¯¯ and CS ¯¯ inputs. memory using the INC DEVICE OPERATION RH: High End Potentiometer Terminal RH is the high end terminal of the potentiometer. It is not required that this terminal be connected to a potential greater than the RL terminal. Voltage applied to the RH terminal cannot exceed the supply voltage, VCC or go below ground, GND. ¯¯ set LOW the CAT5113 is selected and will With CS ¯ and INC ¯¯¯ inputs. HIGH to LOW respond to the U/D ¯¯¯ wil increment or decrement the transitions on INC ¯ input and wiper (depending on the state of the U/D seven-bit counter). The wiper, when at either fixed terminal, acts like its mechanical equivalent and does not move beyond the last position. The value of the ¯¯ counter is stored in nonvolatile memory whenever CS ¯¯¯ input is also HIGH. transitions HIGH while the INC When the CAT5113 is powered-down, the last stored wiper counter position is maintained in the nonvolatile memory. When power is restored, the contents of the memory are recalled and the counter is set to the value stored. RW: Wiper Potentiometer Terminal RW is the wiper terminal of the potentiometer. Its position on the resistor array is controlled by the ¯¯¯, U/D ¯ and CS ¯¯ . Voltage applied to control inputs, INC the RW terminal cannot exceed the supply voltage, VCC or go below ground, GND. RL: Low End Potentiometer Terminal RL is the low end terminal of the potentiometer. It is not required that this terminal be connected to a potential less than the RH terminal. Voltage applied to the RL terminal cannot exceed the supply voltage, VCC or go below ground, GND. RL and RH are electrically interchangeable. ¯¯¯ set low, the CAT5113 may be de-selected With INC and powered down without storing the current wiper position in nonvolatile memory. This allows the system to always power up to a preset value stored in nonvolatile memory. ¯¯ : Chip Select CS The chip select input is used to activate the control input of the CAT5113 and is active low. When in a Doc. No. MD-2009 Rev. T 2 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT5113 OPERATION MODES ¯¯¯ INC ¯¯ CS ¯ U/D Operation High to Low Low High Wiper toward H High to Low Low Low Wiper toward L High Low to High X Store Wiper Position Low Low to High X No Store, Return to Standby X High X Standby ABSOLUTE MAXIMUM RATINGS(1) Parameters Supply Voltage VCC to GND Inputs ¯¯ to GND CS ¯¯¯ to GND INC ¯ to GND U/D H to GND L to GND W to GND Ratings Units -0.5 to +7V V -0.5 to VCC +0.5 -0.5 to VCC +0.5 -0.5 to VCC +0.5 -0.5 to VCC +0.5 -0.5 to VCC +0.5 -0.5 to VCC +0.5 V V V V V V Parameters Operating Ambient Temperature Commercial (‘C’ or Blank suffix) Industrial (‘I’ suffix) Junction Temperature Storage Temperature Lead Soldering (10s max) Ratings Units 0 to 70 -40 to +85 +150 -65 to 150 +300 ºC ºC ºC ºC ºC Max Units RELIABILITY CHARACTERISTICS Symbol Parameter Test Method Min VZAP(2) ILTH(2) (3) Typ ESD Susceptibility MIL-STD-883, Test Method 3015 2000 V Latch-Up JEDEC Standard 17 100 mA TDR Data Retention MIL-STD-883, Test Method 1008 100 Years NEND Endurance MIL-STD-883, Test Method 1003 1,000,000 Stores DC ELECTRICAL CHARACTERISTICS VCC = +2.5V to +6V unless otherwise specified Power Supply Symbol Parameter VCC Operating Voltage Range ICC1 Supply Current (Increment) ICC2 Supply Current (Write) ISB1(3) Supply Current (Standby) Conditions Min Typ Max Units 2.5 – 6.0 V VCC = 6V, f = 1MHz, IW = 0 – – 100 µA VCC = 6V, f = 250kHz, IW = 0 – – 50 µA Programming, VCC = 6V – – 1000 µA VCC = 3V ¯¯ = VCC - 0.3V CS ¯ , INC ¯¯¯ = VCC - 0.3V or GND U/D – – 500 µA – 0.01 1 µA Notes: (1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. (2) This parameter is tested initially and after a design or process change that affects the parameter. (3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to VCC + 1V (4) IW = source or sink (5) These parameters are periodically sampled and are not 100% tested. © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 3 Doc. No. MD-2009 Rev. T CAT5113 Logic Inputs Symbol Parameter Conditions IIH Input Leakage Current VIN = VCC – – 10 µA IIL Input Leakage Current VIN = 0V – – -10 µA 2 – VCC V 0 – 0.8 V VCC x 0.7 – VCC + 0.3 V -0.3 – VCC x 0.2 V VIH1 TTL High Level Input Voltage VIL1 TTL Low Level Input Voltage VIH2 CMOS High Level Input Voltage VIL2 CMOS Low Level Input Voltage 4.5V ≤ VCC ≤ 5.5V 2.5V ≤ VCC ≤ 6V Min Typ Max Units Potentiometer Characteristics Symbol RPOT Parameter Potentiometer Resistance Conditions Min Typ -01 Device 1 -10 Device 10 -50 Device 50 -00 Device 100 Pot. Resistance Tolerance Max Units kΩ ±20 % VRH Voltage on RH pin 0 VCC V VRL Voltage on RL pin 0 VCC V Resolution 1 % INL Integral Linearity Error IW ≤ 2µA 0.5 1 LSB DNL Differential Linearity Error IW ≤ 2µA 0.25 0.5 LSB RWI Wiper Resistance VCC = 5V, IW = 1mA 400 Ω VCC = 2.5V, IW = 1mA 1000 Ω 4.4 mA IW Wiper Current TCRPOT TC of Pot Resistance TCRATIO Ratiometric TC VN CH/CL/CW fc Noise (1) -4.4 300 20 100kHz / 1kHz Potentiometer Capacitances Frequency Response ppm/ºC Passive Attenuator, 10kΩ ppm/ºC 8/24 nV/√Hz 8/8/25 pF 1.7 MHz Note: (1) This parameter is not 100% tested. Doc. No. MD-2009 Rev. T 4 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT5113 AC CONDITIONS OF TEST VCC Range 2.5V ≤ VCC ≤ 6V Input Pulse Levels 0.2VCC to 0.7VCC Input Rise and Fall Times 10ns Input Reference Levels 0.5VCC AC OPERATING CHARACTERISTICS VCC = +2.5V to +6.0V, VH = VCC, VL = 0V, unless otherwise specified Symbol tCI tDI tID tIL tIH tIC tCPH tCPH tIW tCYC tR, tF tPU (2) (2) tWR Parameter Min Typ(1) Max Units ¯¯ to INC ¯¯¯ Setup CS ¯ to INC ¯¯¯ Setup U/D 100 – – ns 50 – – ns ¯ to INC ¯¯¯ Hold U/D ¯¯¯ LOW Period INC 100 – – ns 250 – – ns ¯¯¯ HIGH Period INC ¯¯¯ Inactive to CS ¯¯ Inactive INC 250 – – ns 1 – – µs ¯¯ Deselect Time (NO STORE) CS ¯¯ Deselect Time (STORE) CS 100 – – ns 10 – – ms ¯¯¯ to VOUT Change INC ¯¯¯ Cycle Time INC – 1 5 µs 1 – – µs ¯¯¯ Input Rise and Fall Time INC – – 500 µs Power-up to Wiper Stable – – 1 ms Store Cycle – 5 10 ms A.C. TIMING CS tCI tIL tCYC tIC tIH (store) tCPH 90% INC 90% 10% tDI tID tF U /D tIW tR MI(3) RW Notes: (1) (2) (3) Typical values are for TA = 25ºC and nominal supply voltage. This parameter is periodically sampled and not 100% tested. MI in the A.C. Timing diagram refers to the minimum incremental change in the W output due to a change in the wiper position. © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 5 Doc. No. MD-2009 Rev. T CAT5113 APPLICATIONS INFORMATION Potentiometer Configuration (a) resistive divider (b) variable resistance (c) two-port Applications V1 (-) 3 + R3 1 +5V +5V 9 R2 4 – R1 1 DPP 7 R2 10 + 11 A3 8 RA 6 V2 (+) 5 6 1 DPP 7 VO pRPOT 5 4 3 R3 – + 3 555 R4 6 +2.5V 7 A1 = A2 = A3 = ¼ LM6064 R2 = R3 = R4 = 5kΩ RPOT = 10kΩ 0.01µF +200mV – 1 DPP 7 4 + 20kΩ 8 2 5 2 1 0.01µF Programmable Sq. Wave Oscillator (555) 7 +5V 10kΩ 0.01µF 0.003µF C IC3A ¼ 74HC132 OSC 8 (1-p)R POT R2 Programmable Instrumentation Amplifier + ICIB 6 VREF = 1V 5 499kΩ VCORR – CS 4 7 RB 4 CAT5113/5114 R1 8 2 8 +5V +5V – 2 2 R4 499kΩ +5V 2 CAT5111/5112 IC2 3 – + 4 1 VOUT = 1V ± 1mV 11 ICIA Sensor -5V VSHIFT = 100mV 499kΩ 499kΩ VSENSOR = 1V ± 50mV Sensor Auto Referencing Circuit Doc. No. MD-2009 Rev. T 6 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT5113 +5V 100kΩ 8 2 1 DPP CAT5113/5114 7 VO (REG) VOUT 4 R1 11kΩ 2952 VIN (UNREG) SHUTDOWN SD FB 1.23V GND 6.8µF 1 DPP 7 7 – A1 3 R3 10kΩ 5 CAT5113/5114 4 IS 3 + 1MΩ 5 +5V 2 330Ω 3 6 8 2 pR (1-p)R 330Ω R2 820Ω 1µF +5V 0.1µF +5V 2 10k 6 4 3 6 7 – + A2 VO 6 4 LT1097 +2.5V Programmable I to V Convertor Programmable Voltage Regulator +5V IC1 393 IC2 74HC132 – 1 OSC CLO + R1 VLL 2 3 R2 – CHI 7 10kΩ 0.1µF + 6 R3 5 +5V VUL C1 0.001µF 1µF +5V IC3 CAT5111/5112 +5V 6 2 3 – R2 10k Ω 3 + 7 4 6 VO A1 1 DPP 7 0 ≤ VO ≤ 2.5V AI IC4 4 – 0.001µF 8 2 VO + +5V 2 +5V 10kΩ 1 DPP 7 C2 R1 VS 50kΩ 5 8 R3 100k Ω +2.5V CAT5113/5114 4 VS +2.5V 0 ≤ VS ≤ 2.5V Automatic Gain Control Programmable Bandpass Filter CAT5111/5112 +5V Serial Bus R1 100k Ω +5V – R1 100k Ω VS +5V 2 – + +2.5V R1 100k Ω 3 + R 2.5kΩ 7 IS 1 11 R1 100k Ω + 7 5 +2.5V – A2 6 A1 = A2 = LMC6064A Programmable Current Source/Sink © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 7 Doc. No. MD-2009 Rev. T CAT5113 PACKAGE OUTLINES PDIP 8-LEAD (300MIL) (L) E1 E D A2 A c A1 L e eB b2 b SYMBOL A A1 A2 b b2 c D E E1 e eB L MIN NOM MAX 4.57 0.38 3.05 0.36 1.14 0.21 9.02 7.62 6.09 7.87 2.92 0.46 0.26 7.87 6.35 2.54 BSC 3.81 0.56 1.77 0.35 10.16 8.25 7.11 9.65 3.81 For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC Standard MS001. (3) Dimensioning and tolerancing per ANSI Y14.5M-1982 Doc. No. MD-2009 Rev. T 8 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT5113 SOIC 8-LEAD NARROW BODY (150MIL) (V) E1 E h x 45 D C A Ө1 e A1 L b SYMBOL MIN A1 A b C D E E1 e h L Ө1 0.10 1.35 0.33 0.19 4.80 5.80 3.80 NOM MAX 0.25 1.75 0.51 0.25 5.00 6.20 4.00 1.27 BSC 0.25 0.40 0° 0.50 1.27 8° For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC Specification MS-012. © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 9 Doc. No. MD-2009 Rev. T CAT5113 8-LEAD TSSOP (Y) D 5 8 SEE DETAIL A c E E1 E/2 GAGE PLANE 4 1 PIN #1 IDENT. 0.25 θ1 L A2 SEATING PLANE SEE DETAIL A A e A1 b SYMBOL A A1 A2 b c D E E1 e L θ1 MIN 0.05 0.80 0.19 0.09 2.90 6.30 4.30 0.50 0.00 NOM 0.90 3.00 6.4 4.40 0.65 BSC 0.60 MAX 1.20 0.15 1.05 0.30 0.20 3.10 6.50 4.50 0.75 8.00 For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC Standard MO-153 Doc. No. MD-2009 Rev. T 10 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT5113 8-LEAD MSOP (Z) E1 e e E e D GAUGE PLANE A2 A c L2 θ b L A1 L1 SYMBOL MIN NOM MAX 0.05 0.10 0.15 A A1 1.1 A2 0.75 0.85 0.95 b 0.28 0.33 0.38 D 2.90 3.00 3.10 E 4.80 4.90 5.00 E1 2.90 3.00 3.10 c e L 0.65 BSC 0.35 0.45 0.55 L1 L2 Ө 0º 6º For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf. Notes: (1) (2) (3) All dimensions are in millimeters. Angles in degrees. Complies with JEDEC Specification MS-187. Stand off height/coplanarity are considered as special characteristics. © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 11 Doc. No. MD-2009 Rev. T CAT5113 EXAMPLE OF ORDERING INFORMATION Prefix CAT Device # Suffix 5113 V Optional Company ID I -10 Temperature Range I = Industrial (-40ºC to 85ºC) Product Number 5113 Resistance -01: 1 kΩ -10: 10 kΩ -50: 50 kΩ -00: 100 kΩ Package L: PDIP V: SOIC Y: TSSOP Z: MSOP – G(4) T3 Tape & Reel T: Tape & Reel 3: 3000/Reel Lead Finish Blank: Matte-Tin G: NiPdAu Notes: (1) (2) (3) (4) All packages are RoHS-compliant (Lead-free, Halogen-free). The standard lead finish is NiPdAu. This device used in the above example is a CAT5113VI-10-GT3 (SOIC, Industrial Temperature, 10kΩ, NiPdAu, Tape & Reel). For Matte-Tin finish, contact factory. ORDERING PART NUMBER CAT5113LI-01-G CAT5113LI-10-G CAT5113LI-50-G CAT5113LI-00-G CAT5113VI-01-G CAT5113VI-10-G CAT5113VI-50-G CAT5113VI-00-G CAT5113YI-01-G CAT5113YI-10-G CAT5113YI-50-G CAT5113YI-00-G CAT5113ZI-01-G CAT5113ZI-10-G CAT5113ZI-50-G CAT5113ZI-00-G Doc. No. MD-2009 Rev. T 12 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice REVISION HISTORY Date Rev. Reason Revised Features Revised DC Electrical Characteristics Updated Potentiometer Parameters Changed Green Package marking for SOIC from W to V Add 1kW version to data sheet 10/09/2003 M 03/10/2004 03/29/2004 04/02/2004 N O P 04/08/2004 Q Eliminated data sheet designation Updated Tape and Reel specs in Ordering Information 01/25/2005 04/22/2006 R S Updated Potentiometer Parameters Updated Example of Ordering Information 06/01/2007 T Added Package Outline Added MD- in front of Document No. Copyrights, Trademarks and Patents Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™ and Quad-Mode™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters 2975 Stender Way Santa Clara, CA 95054 Phone: 408.542.1000 Fax: 408.542.1200 www.catsemi.com Document No: MD-2009 Revision: T Issue date: 06/01/07