VISHAY DG2531

DG2531/DG2532
Vishay Siliconix
0.4-Ω Low-Voltage Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2531/DG2532 is a sub 1-Ω (0.4 Ω at 2.7 V) dual
SPDT analog switches designed for low voltage applications.
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•
•
•
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The DG2531/DG2532 has on-resistance matching (less than
0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that
are guaranteed over the entire voltage range. Additionally,
low logic thresholds makes the DG2531/DG2532 an ideal
interface to low voltage DSP control signals.
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rON: 0.4 Ω at 2.7 V
- 69 dB OIRR at 2.7 V, 100 kHz
MSOP-10 Package
ESD Protection > 2000 V
RoHS
COMPLIANT
BENEFITS
• Reduced Power Consumption
The DG2531/DG2532 has fast switching speed (on/off time
at 40 and 35 ns) with break-before-make guaranteed. In the
On condition, all switching elements conduct equally in both
directions. Off-isolation and crosstalk is - 69 dB at 100 kHz.
The DG2531/DG2532 is built on Vishay Siliconix’s
high-density low voltage CMOS process. An eptiaxial layer is
built in to prevent latchup. The DG2531/DG2532 contains
the additional benefit of 2000 V ESD protection.
Packaged in space saving MSOP-10, the DG2531/DG2532
is a high performance, low rON switches for battery powered
applications.
• High Accuracy
• Reduce Board Space
• 1.6 V Logic Compatible
• High Bandwidth
APPLICATIONS
• Cellular Phones
• Speaker Headset Switching
• Audio and Video Signal Routing
• PCMCIA Cards
• Battery Operated Systems
• Relay Replacement
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2531
MSOP-10
V+
1
10
NO2
NO1
2
9
COM2
COM1
3
8
IN2
IN1
4
7
NC2
6
GND
NC1
5
Top View
TRUTH TABLE
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
DG2532
MSOP-10
V+
1
10
NC2
NC1
2
9
COM2
COM1
3
8
IN2
IN1
4
7
NO2
NO1
5
6
GND
Top View
Document Number: 72742
S-71009–Rev. C, 14-May-07
ORDERING INFORMATION
Temp Range
Package
Part Number
- 40 to 85 °C
MSOP-10
DG2531DQ-T1-E3
DG2532DQ-T1-E3
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DG2531/DG2532
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 300
± 500
- 65 to 150
>2
320
IN, COM, NC, NOa
Continuous Current (NO, NC, COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
(D Suffix)
PESD per Method 3015.7
Unit
V
mA
°C
kV
mW
MSOP-10c
Power Dissipation (Packages)b
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve
Limits
- 40 to 85 °C
Tempa
Minb
VNO, VNC,
VCOM
Full
0
rON
Room
Full
0.4
0.6
0.7
Room
0.12
0.2
Symbol
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatnessd
On-Resistance
Match Between Channelsd
Switch Off Leakage Current
rON
Flatness
ΔrDS(on)
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
V+ = 2.7 V, VCOM = 0.6 V/1.5 V
INO, INC = 100 mA
ICOM(on)
Room
V+ = 3.3 V,
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Ω
0.05
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
Room
Full
-1
- 10
1
10
1.4
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
V
Input Current
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2
IINL or IINH
VIN = 0 or V+
Full
0.5
7
1
pF
1
µA
Document Number: 72742
S-71009–Rev. C, 14-May-07
DG2531/DG2532
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve
Limits
- 40 to 85 °C
Tempa
Minb
Typc
Maxb
Room
Full
40
70
77
Room
Full
35
65
72
Unit
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalk
d
NO, NC Off Capacitanced
Channel-On Capacitanced
VNO or VNC = 2.0 V, RL = 50 Ω, CL = 35 pF
XTALK
CNO(off)
CNC(off)
CNO(on)
CNC(on)
Room
CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω
RL = 50 Ω, CL = 5 pF, f = 100 kHz
1
ns
4
Room
54
Room
- 69
Room
- 69
Room
143
Room
403
pC
dB
VIN = 0 or V+, f = 1 MHz
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.8
VIN = 0 or V+
Full
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72742
S-71009–Rev. C, 14-May-07
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DG2531/DG2532
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.8
1.4
T = 25 °C
IA = 100 mA
V+ = 3.0 V
IS = 100 mA
0.7
r ON – On-Resistance (Ω)
r ON – On-Resistance (Ω)
1.2
1.0
V+ = 1.5 V at 10 mA
0.8
V+ = 1.8 V
0.6
V+ = 2.0 V
V+ = 3.0 V
0.4
V+ = 5.0 V
0.2
0.6
85 °C
0.5
25 °C
0.4
0.3
0.2
0.1
0.0
0.0
0.0
0
1
2
3
4
5
0.5
1.0
rON vs. VCOM and Supply Voltage
2.0
2.5
3.0
rON vs. Analog Voltage and Temperature (NC1)
100 mA
100000
10 mA
V+ = 3.0 V
VIN = 0 V
1000
V+ = 5 V
1 mA
I+ – Supply Current (A)
10000
1.5
VCOM – Analog Voltage (V)
VCOM – Analog Voltage (V)
I+ – Supply Current (nA)
- 40 °C
100 µA
10 µA
1 µA
100
100 nA
10 nA
1 nA
10
10
Temperature (°C)
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
300
10000
250
V+ = 3.0 V
ICOM(on)
ICOM(off)
100
INO(off), INC(off)
10
ICOM(on)
150
Leakage Current (pA)
Leakage Current (pA)
1000
V+ = 3.0 V
200
100
INO(off), INC(off)
50
0
- 50
- 100
- 150
- 200
ICOM(off)
- 250
1
- 60
- 40
- 20
0
20
40
60
80
Temperature (°C)
Leakage Current vs. Temperature
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100
- 300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM – Analog Voltage (V)
Leakage vs. Analog Voltage
Document Number: 72742
S-71009–Rev. C, 14-May-07
DG2531/DG2532
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
80
10
tON V+ = 2 V
tOFF V+ = 2 V
50
40
tOFF V+ = 3 V
30
tON V+ = 3 V
20
Loss
- 10
60
Loss, OIRR, X TALK (dB)
t ON / t OFF - Switching Time (ns)
70
XTA LK
- 30
OIRR
- 50
V+ = 3.0 V
RL = 50 Ω
- 70
10
0
- 60
- 90
- 40
- 20
0
20
40
60
80
100
100 K
1M
10 M
100 M
1G
Frequency (Hz)
Temperature (°C)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation, Crosstalk vs.
Frequency
250
2.00
200
150
1.50
Q – Charge Injection (pC)
VT
– Switching Threshold (V)
1.75
1.25
1.00
0.75
0.50
V+ = 5 V
V+ = 2.0 V
100
50
V+ = 3.0 V
0
- 50
- 100
- 150
- 200
- 250
0.25
- 300
- 350
0.00
0
1
2
3
4
5
V+ –Supply V oltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 72742
S-71009–Rev. C, 14-May-07
6
0
1
2
3
4
5
VCOM – Analog Voltage (V)
Charge Injection vs. Analog Voltage
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DG2531/DG2532
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
NO or NC
Switch
Input
tr < 5 ns
tf < 5 ns
50 %
VINL
Switch Output
COM
VINH
VOUT
0.9 x VOUT
IN
Logic
Input
RL
300 Ω
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
COM
NO
VNO
VO
VINH
tr < 5 ns
tf < 5 ns
VINL
NC
VNC
RL
300 Ω
IN
CL
35 pF
GND
VNC = VNO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
ΔVOUT
VOUT
Rgen
V+
NC or NO
COM
VOUT
+
IN
IN
On
Off
On
CL = 1 nF
VIN = 0 - V+
Q = ΔVOUT x CL
GND
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 72742
S-71009–Rev. C, 14-May-07
DG2531/DG2532
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
IN
COM
COM
RL
Analyzer
0 V, 2.4 V
GND
VCOM
Off Isolation = 20 log V
NO/ NC
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72742.
Document Number: 72742
S-71009–Rev. C, 14-May-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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