VISHAY DG409DQ-T1

DG408/409
Vishay Siliconix
8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
DESCRIPTION
FEATURES
The DG408 is an 8-channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A0, A1, A2). The
DG409 is a dual 4-channel differential analog multiplexer
designed to connect one of four differential inputs to a
common dual output as determined by its 2-bit binary
address (A0, A1). Break-before-make switching action
protects against momentary crosstalk between adjacent
channels.
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, address (Ax)
and enable (EN) are TTL compatible over the full specified
operating temperature range.
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Applications for the DG408/409 include high speed data
acquisition, audio signal switching and routing, ATE
systems, and avionics. High performance and low power
dissipation make them ideal for battery operated and remote
instrumentation applications.
Designed in the 44 V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
Additionally, single supply operation is also allowed. An
epitaxial layer prevents latchup.
For additional information please see Technical Article
TA201 (FaxBack Number 70600).
Low On-Resistance - rDS(on): 100 Ω
Low Charge Injection - Q: 20 pC
Fast Transition Time - tTRANS: 160 ns
Low Power - ISUPPLY: 10 µA
Single Supply Capability
44 V Supply Max Rating
TTL Compatible Logic
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
•
•
Reduced Switching Errors
Reduced Glitching
Improved Data Throughput
Reduced Power Consumption
Increased Ruggedness
Wide Supply Ranges (± 5 V to ± 20 V)
APPLICATIONS
•
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Data Acquisition Systems
Audio Signal Routing
ATE Systems
Battery Powered Systems
High Rel Systems
Single Supply Systems
Medical Instrumentation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line
SOIC and TSSOP
DG408
A0
EN
VS1
S2
S3
S4
D
1
2
16
Decoders/Drivers
Dual-In-Line
SOIC and TSSOP
DG409
15
3
14
4
13
5
12
6
11
7
10
8
9
A1
A0
A2
EN
GND
V-
V+
S1a
S5
S2a
S6
S3a
S7
S4a
S8
Da
Top View
1
2
16
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
A1
GND
V+
S1b
S2b
S3b
S4b
Db
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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1
DG408/409
Vishay Siliconix
TRUTH TABLES AND ORDERING INFORMATION
TRUTH TABLE - DG408
TRUTH TABLE - DG409
A2
A1
A0
EN
On Switch
A1
A0
EN
On Switch
X
X
X
0
None
X
X
0
None
0
0
0
1
1
0
0
1
1
0
0
1
1
2
0
1
1
2
0
1
0
1
3
1
0
1
3
0
1
1
1
4
1
1
1
4
1
0
0
1
5
1
0
1
1
6
1
1
0
1
7
1
1
1
1
8
Logic "0" = VAL ≤ 0.8 V
Logic "1" = VAH ≥ 2.4 V
X = Don’t Care
ORDERING INFORMATION - DG408
ORDERING INFORMATION - DG409
Temp Range
Temp Range
Package
Part Number
16-Pin Plastic DIP
16-Pin SOIC
- 40 to 85 °C
Package
Part Number
DG408DJ
DG408DJ-E3
16-Pin Plastic DIP
DG409DJ
DG409DJ-E3
DG408DY
DG408DY-E3
DG408DY-T1
DG408DY-T1-E3
16-Pin SOIC
DG409DY
DG409DY-E3
DG409DY-T1
DG409DY-T1-E3
16-Pin TSSOP
DG409DQ
DG409DQ-E3
DG409DQ-T1
DG409DQ-T1-E3
DG408DQ
DG408DQ-E3
DG408DQ-T1
DG408DQ-T1-E3
16-Pin TSSOP
- 40 to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Voltages Referenced to VDigital
Inputsa
25
GND
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
30
, VS, VD
Current (Any Terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)
Storage Temperature
Power Dissipation (Package)b
Unit
44
V+
100
(AK Suffix)
- 65 to 150
(DJ, DY Suffix)
- 65 to 125
16-Pin Plastic DIPc
450
16-Pin Narrow SOIC and TSSOPd
600
16-Pin
CerDIPe
LCC-20f
900
V
mA
°C
mW
750
Notes:
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 10 mW/°C above 75 °C.
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
DG408/409
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
15
- 15
VAL = 0.8 V, VAH = 2.4 Vf
Tempb
VANALOG
Full
rDS(on)
VD = ± 10 V, IS = - 10 mA
Room
Full
ΔrDS(on)
VD = ± 10 V
Room
Source Off Leakage Current
IS(off)
VS = ± 10 V
VD = ± 10 V, VEN = 0 V
Room
Full
- 0.5
- 50
0.5
50
- 0.5
-5
0.5
5
Drain Off Leakage Current
ID(off)
Room
Full
Room
Full
Room
Full
Room
Full
-1
- 100
-1
- 50
-1
- 100
-1
- 50
1
100
1
50
1
100
1
50
-1
- 20
-1
- 10
-1
- 20
-1
- 10
1
20
1
10
1
20
1
10
2.4
Parameter
Analog Switch
Symbol
Analog Signal Rangee
Drain-Source
On-Resistance
rDS(on) Matching Between Channelsg
Drain On Leakage Current
ID(on)
VD = ± 10 V
VS = ± 10 V
VEN = 0 V
DG408
VS = VD = ± 10
Sequence Each
Switch On
DG408
DG409
DG409
Typc
- 15
40
100
125
15
Maxd
Unit
15
V
100
125
Ω
15
%
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
Logic High Input Current
IAH
VA = 2.4 V, 15 V
Full
- 10
10
- 10
10
Logic Low Input Current
IAL
VEN = 0 V, 2.4 V, VA = 0 V
Full
- 10
10
- 10
10
Logic Input Capacitance
Cin
f = 1 MHz
Room
8
Dynamic Characteristics
Transition Time
tTRANS
See Figure 2
Full
160
Break-Before-Make Interval
tOPEN
See Figure 4
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
tOFF(EN)
Room
Room
Full
Room
Charge Injection
Q
Off Isolationh
OIRR
Source Off Capacitance
CS(off)
Drain Off Capacitance
CD(off)
Drain On Capacitance
CD(on)
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Positive Supply Current
I+
Negative Supply Current
I-
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
See Figure 3
CL = 10 nF, VS = 0 V
VEN = 0 V, RL = 1 kΩ
f = 100 kHz
VEN = 0 V, VS = 0 V, f = 1 MHz
VEN = 0 V
VD = 0 V
f = 1 MHz
DG408
250
115
V
µA
250
10
150
225
150
105
150
ns
150
Room
20
pC
Room
- 75
dB
Room
3
Room
26
DG409
Room
14
Room
37
DG409
Room
25
Full
10
Full
Room
Full
Full
1
0.2
VEN = 2.4 V, VA = 0 V
0.8
pF
10
DG408
VEN = VA = 0 V or 5 V
2.4
0.8
nA
pF
75
- 75
75
- 75
0.5
2
- 500
0.5
2
- 500
µA
mA
µA
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DG408/409
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Symbol
VAL = 0.8 V, VAH = 2.4 Vf
Tempb
Typc
rDS(on)
VD = 3 V, 10 V, IS = - 1 mA
Room
90
Switching Time of Multiplexere
tTRANS
VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V
Room
180
Enable Turn-On Timee
tON(EN)
Room
180
e
tOFF(EN)
VINH = 2.4 V, VINL = 0 V
VS1 = 5 V
Room
120
Q
CL = 1 nF, VS = 6 V, RS = 0
Room
5
Parameter
Analog Switch
Drain-Source
On-Resistancee,f
Dynamic Characteristics
Enable Turn-Off Time
Charge Injectione
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Mind
Maxd
Maxd
Unit
Ω
ns
pC
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. ΔrDS(on) = rDS(on) MAX - rDS(on) MIN.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
DG408/409
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
60
VS = 0 V for ID(off)
VS = VD for ID(on)
V+ = 15 V
V- = - 15 V
40
60
CD(on)
DG408 ID(off)
CD(off)
I D (pA)
C S, D (pF)
20
40
DG409 ID(off)
DG409 ID(on)
0
- 20
20
DG408 ID(on)
CS(off)
- 40
0
- 60
- 15
- 10
-5
0
5
10
15
0
2
VANALOG – Analog Voltage (V)
100
15
- 20
- 60
DG408 ID(on), ID(off)
- 140
- 15
5
0
DG409 ID(on)
- 100
V+ = 15 V
V- = - 15 V
10
DG409 ID(off)
IS(off) (pA)
I D (pA)
20
V+ = 15 V
V- = - 15 V
VS = -VD for ID(off)
VD = VS(open) for ID(on)
20
12
Drain Leakage Current vs. Source/Drain Voltage
(Single 12-V Supply)
Source/Drain Capacitance vs. Analog Voltage
60
4
6
8
10
VANALOG – Analog V oltage (V)
V+ = 12 V
V- = 0 V
-5
- 10
- 10
-5
0
5
10
VD or VS - Drain or Source Voltage (V)
15
- 15
Drain Leakage Current vs. Source/DrainVoltage
- 10
-5
5
0
VS - Source Voltage (V)
10
15
Source Leakage Current vs. Source Voltage
- 100 mA
2.0
VSUPPLY = ± 15 V
- 10 mA
1.5
VEN = 2.4 V
1.0
I-
V TH (V)
- 1 mA
- 100 µA
- 10 µA
VEN = 0 V or 5 V
0.5
- 1 µA
0.0
- 0.1 µA
4
8
12
16
+VSUPPLY (V)
Input Switching Threshold vs. Supply Voltage
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
20
100
1k
10 k
100 k
1M
10 M
Switching Frequency (Hz)
Negative Supply Current vs. Switching Frequency
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DG408/409
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 mA
100 µA
VSUPPLY = 15 V
10 µA
I+
10 mA
1 µA
100 nA
I+, I-
I+
VEN = 2.4 V
1 mA
10 nA
1 nA
100 µA
- (I-)
VEN = 0 V or 5 V
VSUPPLY = ± 15 V
VA = 0 V
VEN = 0 V
100 pA
10 µA
10 pA
100
1k
10 k
100 k
1M
10 M
- 55 - 35
5
- 15
Switching Frequency (Hz)
45
25
85
65
105
125
Temperature (°C)
Positive Supply Current vs. Switching Frequency
ISUPPLY vs. Temperature
90
CL = 10000 pF
VIN = 5 Vp-p
80
20
70
60
10
Q (pC)
I+ (µA)
15
V+ = 15 V
V- = - 15 V
VIN = 0 V
VEN = 0 V
50
V+ = 15 V
V- = - 15 V
40
30
20
5
10
V+ = 12 V
V- = 0 V
0
0
- 55
5
- 35 - 15
45
25
85
65
105
- 10
- 15
125
- 10
Temperature (°C)
-5
5
0
10
15
VS - Source Voltage (V)
Positive Supply Current vs. Temperature (DG408)
Charge Injection vs. Analog Voltage
160
120
140
V+ = 7.5 V
100
±5V
120
10 V
100
r DS(on) (Ω)
r DS(on) (Ω)
80
±8V
± 10 V
± 12 V
60
12 V
80
15 V
60
20 V
40
22 V
40
± 20 V
20
0
- 20
V- = 0 V
± 15 V
20
0
- 16 - 12
-8
-4
0
4
8
12
VD - Drain Voltage (V)
rDS(on) vs. VD and Supply
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16
20
0
4
8
12
16
20
22
VD - Drain Voltage (V)
rDS(on) vs. VD and Supply (Single Supply)
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
DG408/409
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
130
V+ = 15 V
V- = - 15 V
70
125 °C
110
85 °C
60
125 °C
85 °C
40
25 °C
r DS(on) (Ω)
r DS(on) (Ω)
90
50
30
25 °C
70
0 °C
- 40 °C
50
20
0 °C
- 40 °C
- 55 °C
- 55 °C
30
10
0
V+ = 12 V
V- = 0 V
10
- 15
- 10
0
-5
5
10
15
2
0
VS - Source Voltage (V)
10
8
12
VS - Source Voltage (V)
rDS(on) vs. VS and Temperature
rDS(on) vs. VS and Temperature (Single Supply)
- 150
1
RL = 1 kΩ
V+ = 15 V
V- = - 15 V
RL = 1 kΩ
- 130
0
V+ = 15 V
V- = - 15 V
Ref. 1 Vrms
-1
LOSS (dB)
- 110
(dB)
6
4
- 90
Off-Isolation
- 70
-2
-3
-4
Crosstalk
- 50
RL = 50 Ω
-5
- 30
-6
100
1k
100 k
10 k
1M
10 M
10
100 M
100
1k
f - Frequency (Hz)
10 k
100 k
1M
10 M
100 M
f - Frequency (Hz)
Insertion Loss vs. Frequency
Off Isolation and Crosstalk vs. Frequency
275
200
tTRANS
250
175
225
t (ns)
t (ns)
150
200
tTRANS
175
125
tOFF(EN)
tOFF(EN)
150
tON(EN)
100
125
tON(EN)
75
± 10
100
± 12
± 14
± 16
± 18
± 20
VSUPPLY (V)
Switching Time vs. Bipolar Supply)
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
± 22
8
9
10
11
12
13
14
15
VSUPPLY (V)
Switching Time vs. Single Supply
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DG408/409
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
VREF
GND
D
A0
V+
Level
Shift
AX
V-
Decode/
Drive
S1
V+
EN
Sn
V-
Figure 1.
TEST CIRCUITS
+ 15 V
V+
A2
S1
A1
± 10 V
S2 - S7
A0
DG408
S8
EN
± 10 V
VO
D
GND
V-
50 %
0V
35 pF
300 Ω
50 Ω
Logic
Input
tr < 20 ns
tf < 20 ns
3V
- 15 V
VS1
90 %
Switch
Output
+ 15 V
VO
0V
V+
A1
A0
± 10 V
S1
90 %
VS8
S1a - S4a, Da
DG409
S4b
S1 ON
GND
S8 ON
VO
Db
EN
tTRANS
tTRANS
± 10 V
V300 Ω
50 Ω
35 pF
- 15 V
Figure 2. Transition Time
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
DG408/409
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
S1
-5V
EN
S2 - S8
A0
DG408
A1
A2
GND
VO
D
V-
50 Ω
Logic
Input
50 %
0V
35 pF
1 kΩ
tr < 20 ns
tf < 20 ns
3V
tON(EN)
- 15 V
tOFF(EN)
0V
+ 15 V
Switch
Output
VO
V+
S1b
90 %
-5V
VO
EN
A0
A1
10 %
S1a - S4a, Da
S2b - S4b
DG409
Db
GND
VO
V-
50 Ω
35 pF
1 kΩ
- 15 V
Figure 3. Enable Switching Time
+ 15 V
EN
+ 2.4 V
V+
Logic
Input
All S and Da
+5V
tr < 20 ns
tf < 20 ns
3V
50 %
0V
A0
DG408
DG409
A1
A2
GND
50 Ω
Db, D
VO
VS
V-
- 15 V
300 Ω
80 %
Switch
Output
35 pF
VO
0V
tOPEN
Figure 4. Break-Before-Make Interval
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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DG408/409
Vishay Siliconix
TEST CIRCUITS
+ 15 V
Rg
V+
SX
Logic
Input
EN
OFF
ON
OFF
0V
A0
Channel
Select
3V
VO
D
A1
CL
10 nF
A2
GND
V-
ΔVO
Switch
Output
ΔVO is the measured voltage due to charge transfer
error Q, when the channel turns off.
Q = CL x ΔVO
- 15 V
Figure 5. Charge Injection
+ 15 V
+ 15 V
VIN
VIN
VS
Rg = 50 Ω
V+
S1
V+
SX
SX
VS
S8
S8
A0
D
VO
A1
A0
Rg = 50 Ω
A2
GND
A1
RL
1 kΩ
V-
EN
VO
D
A2
EN
GND
- 15 V
RL
1 kΩ
V-
- 15 V
VOUT
Off Isolation = 20 log
Crosstalk = 20 log
VIN
VOUT
VIN
Figure 6. Off Isolation
Figure 7. Crosstalk
+ 15 V
+ 15 V
VS
V+
S1
V+
Rg = 50 Ω
A0
D
VO
A1
A2
GND
EN
V-
Channel
Select
HP4192A
Impedance
Analyzer
or Equivalent
S8
A1
D
GND
- 15 V
Meter
A2
A0
RL
1 kΩ
Insertion Loss = 20 log
S1
VOUT
EN
f = 1 MHz
V- 15 V
VIN
Figure 8. Insertion Loss
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Figure 9. Source Drain Capacitance
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
DG408/409
Vishay Siliconix
APPLICATIONS HINTS
Overvoltage Protection
A very convenient form of overvoltage protection consists of
adding two small signal diodes (1N4148, 1N914 type) in
series with the supply pins (see Figure 10). This
arrangement effectively blocks the flow of reverse currents.
It also floats the supply pin above or below the normal V+ or
V- value. In this case the overvoltage signal actually
becomes the power supply of the IC. From the point of view
of the chip, nothing has changed, as long as the difference
VS - (V-) doesn’t exceed + 44 V. The addition of these diodes
will reduce the analog signal range to 1 V below V+ and 1 V
above V-, but it preserves the low channel resistance and low
leakage characteristics.
V+
1N4148
SX
D
Vg
DG408
1N4148
V-
Figure 10. Overvoltage Protection Using Blocking Diodes
Differential 4-Channel Sequential Multiplexer/Demultiplexer
8-Channel Sequential Multiplexer/Demultiplexer
+ 15 V
V+
S1
GND
V+
S1a
VAnalog
Output
(Input)
S2
S3
Analog
Inputs
(Outputs)
S4
+ 15 V
- 15 V
DG408
D
S5
Clock
In
NC
DM7493
QB
QC
QA
r01
r02 GND
NC
Differential
Analog
Outputs
(Inputs)
DG409
S1b
S2b
Db
S3b
A1
A2
S4b
A0
EN
QD
AIN
Da
S4a
+ 15 V
BIN
V-
S3a
Differential
Analog
Inputs
(Outputs)
S7
S8
A0
GND
S2a
S6
+ 15 V
- 15 V
Clock
In
J
Q
1/2 MM74C73
CLK
K
CLEAR
+ 15 V
Q
GND
A1
EN
J
Q
1/2 MM74C73
CLK
NC
Q
K
NC
CLEAR
6
Enable In
Reset Enable
(MUX On-Off Control)
Figure 11.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70062.
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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