VISHAY SMBJ9.0A

SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
600 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
SYMBOL
VALUE
UNIT
PPPM
600
W
IPPM
See next table
A
IFSM
100
A
TJ, TSTG
- 55 to + 150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
SMBJ5.0
(+)SMBJ5.0A (5)
(+)
SMBJ6.0
SMBJ6.0A
(+)
SMBJ6.5
(+)
SMBJ6.5A
(+)
SMBJ7.0
(+)
SMBJ7.0A
(+)
SMBJ7.5
(+)
SMBJ7.5A
(+)
SMBJ8.0
(+)
SMBJ8.0A
(+)SMBJ8.5
(+)SMBJ8.5A
(+)SMBJ9.0
(+)
SMBJ9.0A
(+)SMBJ10
(+)
SMBJ10A
(+)
SMBJ11
(+)SMBJ11A
(+)
SMBJ12
(+)SMBJ12A
(+)
SMBJ13
(+)SMBJ13A
(+)SMBJ14
(+)
SMBJ14A
(+)SMBJ15
(+)
SMBJ15A
(+)SMBJ16
(+)SMBJ16A
(+)SMBJ17
(+)
SMBJ17A
(+)
SMBJ18
(+)SMBJ18A
(+)
SMBJ20
(+)SMBJ20A
(+)
SMBJ22
(+)
SMBJ22A
(+)SMBJ24
(+)
SMBJ24A
(+)SMBJ26
(+)
SMBJ26A
(+)
SMBJ28
(+)SMBJ28A
(+)
SMBJ30
(+)
SMBJ30A
(+)SMBJ33
(+)
SMBJ33A
(+)
SMBJ36
(+)
SMBJ36A
(+)SMBJ40
(+)
SMBJ40A
(+)
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2
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
UNI
BI
MIN.
MAX.
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LU
LV
LW
LX
LY
LZ
MD
ME
MF
MG
MH
MK
ML
MM
MN
MP
MQ
MR
KD
KE
KF
KG
AH
AK
KL
KM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
KY
KZ
BD
BE
LF
LG
BH
BK
BL
BM
LN
LM
LQ
LR
BS
BT
LU
LV
BW
BX
BY
BZ
CD
CE
MF
MG
CH
CK
CL
CM
CN
CP
CQ
CR
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK PULSE
SURGE
CURRENT
ID (µA) (3)
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
800
800
800
800
500
500
200
200
100
100
50
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
10.2
11.3
9.3
10.3
8.4
9.3
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88392
Revision: 04-Sep-07
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
SMBJ43
(+)SMBJ43A
(+)
SMBJ45
(+)SMBJ45A
(+)
SMBJ48
(+)SMBJ48A
(+)SMBJ51
(+)
SMBJ51A
SMBJ54
(+)
SMBJ54A
(+)SMBJ58
(+)SMBJ58A
(+)
SMBJ60
(+)
SMBJ60A
(+)
SMBJ64
(+)SMBJ64A
(+)SMBJ70
(+)SMBJ70A
(+)SMBJ75
(+)
SMBJ75A
(+)
SMBJ78
(+)SMBJ78A
(+)SMBJ85
(+)SMBJ85A
(+)
SMBJ90
(+)SMBJ90A
(+)
SMBJ100
(+)
SMBJ100A
(+)SMBJ110
(+)
SMBJ110A
(+)SMBJ120
(+)
SMBJ120A
(+)SMBJ130
(+)
SMBJ130A
(+)
SMBJ150
(+)
SMBJ150A
(+)
SMBJ160
(+)SMBJ160A
(+)
SMBJ170
(+)SMBJ170A
SMBJ188
SMBJ188A
(+)
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
UNI
BI
MIN.
MAX.
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PS
CS
CT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PS
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK PULSE
SURGE
CURRENT
ID (µA) (3)
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
1.7
2.0
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 50 A (uni-directional only)
(+)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
SYMBOL
VALUE
UNIT
RθJA
100
°C/W
RθJL
20
°C/W
(1)
Typical thermal resistance, junction to lead
Note:
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ5.0A-E3/52
0.096
52
750
7" diameter plastic tape and reel
SMBJ5.0A-E3/5B
0.096
5B
3200
13" diameter plastic tape and reel
SMBJ5.0AHE3/52 (1)
0.096
52
750
7" diameter plastic tape and reel
SMBJ5.0AHE3/5B (1)
0.096
5B
3200
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
1.0
3.0
2.0
td - Pulse Width (s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
100
4.0
6000
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
75
50
25
0
Measured at
Zero Bias
1000
VR, Measured at Stand-Off
Voltage VWM
100
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
25
50
75
100
125
150
175
200
1
10
100
TJ - Initial Temperature (°C)
VWM - Reverse Stand-Off Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
200
Document Number: 88392
Revision: 04-Sep-07
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
200
Peak Forward Surge Current (A)
Transient Thermal Impedance (°C/W)
100
10
1.0
0.1
0.001
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
0.01
0.1
1.0
10
100
1000
1
10
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.086 (2.20)
0.155 (3.94)
0.130 (3.30)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1