EIC Z1150AM

Certificate : TH97/10561QM
Z1150AM & Z1180AM
Certificate : TW00/17276EM
SILICON ZENER DIODES
M1A
VZ : 150 & 180 Volts
PD : 1.0 Watts
FEATURES :
*
*
*
*
*
1.00 (25.4)
MIN.
0.085(2.16)
0.075(1.91)
Glass passivated chip
High peak reverse power dissipation
High reliability
Low leakage current
Pb / RoHS Free
0.138(3.51)
0.122(3.10)
1.00 (25.4)
MIN.
0.024(0.60)
0.022(0.55)
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified.
Rating
Symbol
Value
Unit
DC Power Dissipation at TL = 75 °C (1)
PD
1.0
W
Maximum Forward Voltage at I F = 200 mA
VF
1.2
V
Junction Temperature Range
TJ
- 55 to + 175
°C
Storage Temperature Range
TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Type.
Nominal Zener
Test
Maximum Zener
Maximum Reverse
Maximum DC
Voltage (2)
VZ @ IZT
Current
Impedance
Leakage Current
Zener Current
IR @ VR
IZM
IZT
ZZT @ IZT
ZZK @ IZK
IZK
(V)
(mA)
(Ω)
(Ω)
(mA)
(μA)
(V)
(mA)
Z1150AM
150
1.7
1000
6000
0.25
5.0
114.0
6.4
Z1180AM
180
1.4
1200
7000
0.25
5.0
136.8
5.2
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body.
(2) The type number listed have a standard tolerance on the nominal zener voltage of ± 5%.
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Rev. 00 : March 13, 2007