SMD Switching Diode CDSSC4148N-G Voltage: 75 V Current: 150mA RoHS Device 0805 Features 0.087(2.20) 0.071(1.80) -Designed for mounting on small surface. -Silicon Epitaxial Planar Diode. 0.057(1.45) 0.041(1.05) -Fast switching diode. -Lead free 0.037(0.95) 0.029(0.75) Mechanical data 0.026(0.65) 0.010(0.25) -Case: 0805 -Marking: Cathode Band. -Weight: 0.006 gram(approx.). Dimensions in inches and (millimeter) Thermal Characteristics 1) (Parameter at Tamb = 25°C ) Parameter Symbol Forward Power Dissipation Power derating above 25 °C Ptot Value Unit 200 mW 1.60 mW/°C TJ 150 °C Thermal Resistance Junction to Ambient Air RөJA 375 °C/W Operating & Storage Temperature Range TSTG -55 to +150 °C Junction Temperature Maximum Rating (Parameter at Tamb = 25°C ) 1) Symbol Value Unit Pepetitive Peak Reverse Voltage VRMM 100 V Average rectified current sin half wave rectification with resistive load IF(AV) 150 mA Repetitive Peak Forward Current at Tamb=25°C IFRM 300 mA 500 mA 1000 mA Value Unit 1.0 V Parameter Non-Repetitive Surge Forward Current at t<1s and Tj=25°C IFSM at t≤8.3ms and Tj=25°C Electrical Characteristics Parameter MAX. Forward Voltage at IF=10mA MAX. Leakage Current at IF=100mA at VR=20V 1) (Parameter at Tamb = 25°C ) Symbol VF IR 1.25 V 0.025 uA 5 uA Capacitance at VR=0V,f=1MHz Ctot 4 pF Reverse Recovery Time at IF=IR=10mA, RL=100Ω Trr 4 ns at VR=75V Notes: 1.) Valid provided that components are kept at ambient temperature. REV:A QW-B0049 Page 1 SMD Switching Diode RATING AND CHARACTERISTIC CURVES (CDSSC4148N-G) Fig.1 - Forward characteristics Fig.2 - Power De-rating (mA ) 1000 500 IF Power dissipation, (mW) 100 10 -1 TJ TJ = 2 =1 10 5 OC 00 O C 1 -2 400 300 200 100 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (V) 0 20 40 60 80 100 120 140 160 180 200 Tamb-Ambient Temperature, (°C) VF Fig.3 - Forward Current De-rating Fig.4 - Relative Voltage De-rating 500 200 VR / V IF / mA 400 300 100 200 100 0 0 0 25 50 75 100 125 150 175 Tamb-Ambient temperature, (°C) 200 0 25 50 75 100 125 150 175 200 Tamb-Ambient temperature, (°C) REV:A QW-B0049 Page 2 SMD Switching Diode Reel Taping Specification d P0 T P1 E Index hole F W B C Polarity P A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... 10 pitches (min) ....... ....... Start 10 pitches (min) Direction of Feed 0805 0805 C d D D1 D2 0.95 ± 0.05 1.50 ± 0.10 178.0±1.00 60.0±1.00 13.0 ±0.30 0.059 ± 0.004 7.007±0.040 2.362±0.040 0.512 ± 0.012 P P0 P1 W W1 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.20 9.50 ± 0.30 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.008 0.374 ±0.012 SYMBOL A B (mm) 1.65 ± 0.20 (inch) 0.065 ± 0.008 SYMBOL E F (mm) 1.75 ± 0.10 (inch) 0.689 ± 0.004 2.40 ± 0.20 0.094 ± 0.008 0.037 ± 0.002 REV:A QW-B0049 Page 3 SMD Switching Diode Suggested PAD Layout D 0805 A SIZE (mm) (inch) A 1.70-2.10 0.067-0.083 B 0.50-0.90 0.020-0.035 C 1.20-1.40 0.047-0.055 D 2.20-3.00 0.087-0.118 E 1.20 0.047 E C B Standard Packaging REEL PACK Case Type 0805 REEL Reel Size ( pcs ) (inch) 5,000 7 REV:A Page 4 QW-B0049 Comchip Technology CO., LTD.