1N4448 FAST SWITCHING SURFACE MOUNT DIODES 500 mW POWER 100 Volts VOLTAGE FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives 3.0 MECHANICAL DATA • Case: Molded Glass DO-35 • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.13 grams • Mounting Position: Any • Ordering information: Suffix : “ -35 ” to order DO-35 Package • Packing information B - 2K per Bulk box T/R - 10K per 13" plastic Reel T/B - 5K per horiz. tape & Ammo box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) PARAMETER SYMBOL 1N4448 UNITS VRM 100 V VDC 75 V C And f >50Hz IAV 150 mA C IFSM 500 mA PTOT 500 mW Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at Ta=25 Surge Forward Current at t < 1s and Tj= =25 Power Dissipation at Tamb= 25 O O O C Maximum Forward Voltage at IF =100mA VF 1.0 V Maximum Leakage Current at VR =20V at VR =20V ,TJ= 150O C IR 30 50 nA µA Maximum Capacitance at VF =VR =0 CJ 4 pF Maximum Reverse Recovery Time From IF =-IR =10mA to IR R =-1mA ,VR =6V RL =100 Ω trr 4 ns Typical Maximum Thermal Resistance RθJ A 350 Junction Temperature and Storage Temperature Range TJ,TS -65 to +175 O C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-FEB.17.2009 PAGE . 1 1N4448 10 REVERSE CURRENT, mA FORWARD CURRENT, mA 100 10 1.0 TA=150 OC TA=125 OC 1.0 TA=85 OC 0.1 TA=55 OC 0.01 TA=25 OC 0.1 0.2 0.6 0.4 0.8 1.0 1.2 0.001 0 20 30 40 50 REVERSE VOLTAGE, Volts FORWARD VOLTAGE, Volts LEAKAGE CURRENT FORWARD VOLTAGE DIODE CAPACITANCE, pF 10 6.0 4.5 60 W 3.5 VRF=2V 2nF 5k W Vo 1.5 0 0 2 4 6 8 RECTIFICATION EFFCIENCY MEASUREMENT CIRCUIT REVERSE VOLTAGE, Volts TYPICAL CAPATICANCE STAD-FEB.17.2009 PAGE . 2