PANJIT 1N4150

1N4150
FAST SWITCHING SURFACE MOUNT DIODES
POWER
50 Volts
VOLTAGE
500 mWatts
FEATURES
• Fast switching Speed.
• Surface Mount Package Ideally Suited For Automatic Insertion.
• Silicon Epitaxal Planar Construction.
• In compliance with EU RoHS 2002/95/EC directives
3.0
MECHANICAL DATA
• Case: Mini Melf, Glass
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
PARAMETER
SYMBOL
1N4150
UNITS
Reverse Voltage
VR
50
V
Peak Reverse Voltage
VR M
50
V
VR M S
35
V
IF (A V )
200
mA
IF S M
500
mA
PT O T
500
mW
Maximum Forward Voltage at IF =200mA
VF
1.0
V
Maximum Leakage Current at VR = 50V
IR
0.1
µA
Maximum Capacitance (Note 1)
CJ
4
pF
trr
4
ns
Typcal Thermal Resistance
RθJ A
350
Junction Temperature and Storage Temperature Range
TJ ,TS
-65 to +175
RMS Voltage
O
Maximum Average Forward Current at TA =25 C And f > 50Hz
Surge Forward Current at t < 1s and TJ =25
Power Dissipation at Tamb= 25
O
O
C
C
Maximum Reverse Recovery Time (Note 2)
O
C/W
O
C
NOTE:
1. CJ at VR=0, f=1MHZ
2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω
STAD-FEB.06.2009
PAGE . 1
1N4150
1000
TJ =150OC
100
TJ =25OC
REVERSE CURRENT,uA
FORWARD CURRENT, mA
10
10
1.0
0.1
TJ =125OC
1.0
TJ =85OC
0.1
TJ =55OC
0.01
TJ =25OC
0.01
0
1.0
2.0
0.001
0
10
FORWARD VOLTAGE, VOLTS
P D , POWER DISSIPATION (mW)
DIODE CAPACITANCE, pF
3.0
2.0
1.0
2
4
6
REVERSE VOLTAGE, VOLTS
TYPICAL CAPATICANCE
STAD-FEB.06.2009
40
50
LEAKAGE CURRENT
4.0
0
30
REVERSE VOLTAGE, VOLTS
FORWARD VOLTAGE
0
20
8
500
400
300
200
100
0
50
100
150
200
O
AMBIENT TEMPERATURE( C)
POWER DERATING
PAGE . 2