1N5921B~1N5942B SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) FEATURES • Low profile package .034(.86) 1.0(25.4)MIN. • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .028(.71) .205(5.2) .160(4.1) • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: JEDEC DO-41,Molded plastic over passivated junction. • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 1.0(25.4)MIN. .107(2.7) • Polarity: Color band denotes positive end (cathode) • Standard packing: 52mm tape • Weight: 0.0118 ounce, 0.336 gram .080(2.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter DC Power Dissipation on TA=75 O C ,Measure at Zero Lead Length Derate above 75O C ( NOTE 1) Operating Junction and StorageTemperature Range Symbol Value Units PD 1.5 Watts TJ , TSTG -55 to +150 O C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-FEB.10.2009 1 PAGE . 1 1N5921B~1N5942B N o m i na l Ze ne r V o l t a g e Part Number Maximum Leakage Current M a x i m u m Z e n e r Im p e d a n c e IR VR No m. V V Z @ IZT M i n. V M a x. V Ω mA Ω mA µA V 1N5921B 6.8 6.46 7.14 3 55.1 200 1 5 5.2 1N5922B 7.5 7.13 7.88 3 50 400 0.5 5 6 1N5923B 8.2 7.79 8.61 4 45.7 400 0.5 5 6.5 1N5924B 9.1 8.65 9.56 4 41.2 500 0.5 5 7 1N5925B 10 9.5 10.5 5 37.5 500 0.25 5 8 1N5926B 11 10.45 11.55 6 34.1 550 0.25 1 8.4 1N5927B 12 11.4 12.6 7 31.2 550 0.25 1 9.1 1N5928B 13 12.35 13.65 7 28.8 550 0.25 1 9.9 1N5929B 15 14.25 15.75 9 25 600 0.25 1 11.4 1N5930B 16 15.2 16.8 10 23.4 600 0.25 1 12.2 1N5931B 18 17.1 18.9 12 20.8 650 0.25 1 13.7 1N5932B 20 19 21 14 18.7 650 0.25 1 15.2 1N5933B 22 20.9 23.1 18 17 650 0.25 1 16.7 1N5934B 24 22.8 25.2 19 15.6 700 0.25 1 18.2 1N5935B 27 25.65 28.35 23 13.9 700 0.25 1 20.6 1N5936B 30 28.5 31.5 26 12.5 750 0.25 1 22.8 1N5937B 33 31.35 34.65 33 11.4 800 0.25 1 25.1 1N5938B 36 34.2 37.8 38 10.4 850 0.25 1 27.4 1N5939B 39 37.05 40.95 45 9.6 900 0.25 1 29.7 1N5940B 43 40.85 45.15 53 8.7 950 0.25 1 32.7 1N5941B 47 44.65 49.35 67 8 1000 0.25 1 35.8 1N5942B 51 48.45 53.55 70 7.3 1100 0.25 1 38.8 STAD-FEB.10.2009 1 Z ZT @ IZT Z ZK @ IZK PAGE . 2 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 150 180 vz, TEMPERATURE COEFICENT (mV/ OC) MAXIMUM POWER DISSIPATION, Watts 1N5921B~1N5942B 10 V @I Z ZT 8 6 4 2 0 -2 -4 2 200 V @I Z ZT 70 50 30 20 10 20 10 12 Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V) Zz, DYNAMIC IMPEDANCE (OHMS) vz, TEMPERATURE COEFICENT (mV/ OC) Fig.1 Steady State Power Derating 10 8 V , ZENER VOLTAGE (VOLTS) Z O LEAD TEMPERATURE, C 100 6 4 50 30 1K 500 T = 25 O C J I (rms) =0.1 I (dc) Z Z 200 100 50 20 10 5 22V 12V 2 1 0.5 Vz, ZENER VOLTAGE (VOLTS) 6.8V 1 5 2 10 20 50 100 200 500 Iz, ZENER TEST CURRENT (mA) Fig.4 Z ener impedance v.s. zener current Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V) I Z (dc)=1mA 100 70 50 30 20 10mA 10 7 5 3 2 I Z (rms)=0.1I Z (dc) 20mA 5 7 10 20 3 0 40 50 60 70 100 Vz, ZENER VOLTAGE (VOLTS) Fig.5 Z ener impedance v.s. zener voltage STAD-FEB.10.2009 1 Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 1K 200 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 1 2 3 5 10 2030 50 100 PW, PULSE WIDTH (ms) Fig.6 Maximum Surge Power PAGE . 3 1N5921B~1N5942B 100 Iz, ZENER CURRENT (mA) Iz, ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0 .1 0 10 20 30 40 Vz, ZENER VOLTAGE (VOLTS) Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz STAD-FEB.10.2009 1 PAGE . 4