CYPRESS CY7C1176V18

CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
18-Mbit QDR™-II+ SRAM 4-Word Burst
Architecture (2.5 Cycle Read Latency)
Features
Functional Description
■
Separate independent read and write data ports
❐ Supports concurrent transactions
■
300 MHz to 400 MHz clock for high bandwidth
■
4-word burst to reduce address bus frequency
■
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 800 MHz) at 400 MHz
■
Read latency of 2.5 clock cycles
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■
Single multiplexed address input bus latches address inputs
for both read and write ports
■
Separate port selects for depth expansion
■
Data valid pin (QVLD) to indicate valid data on the output
■
Synchronous internally self-timed writes
■
Available in x8, x9, x18, and x36 configurations
■
Full data coherency providing most current data
■
Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]
■
Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
■
Offered in both Pb-free and non Pb-free packages
■
Variable drive HSTL output buffers
■
JTAG 1149.1 compatible test access port
■
Delay Lock Loop (DLL) for accurate data placement
The CY7C1161V18, CY7C1176V18, CY7C1163V18, and
CY7C1165V18 are 1.8V Synchronous Pipelined SRAMs
equipped with QDR™-II+ architecture. QDR-II+ architecture
consists of two separate ports to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR-II+ architecture has separate data inputs and
data outputs to completely eliminate the need to turn around the
data bus that is required with common IO devices. Each port can
be accessed through a common address bus. Addresses for
read and write addresses are latched onto alternate rising edges
of the input (K) clock. Accesses to the QDR-II+ read and write
ports are completely independent of one another. In order to
maximize data throughput, both read and write ports are
equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with four 8-bit words
(CY7C1161V18), 9-bit words (CY7C1176V18), 18-bit words
(CY7C1163V18), or 36-bit words (CY7C1165V18) that burst
sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input
clocks K and K, memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects for each port.
Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the or K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Configurations
With cycle read latency of 2.5 cycles:
CY7C1161V18 – 2M x 8
CY7C1176V18 – 2M x 9
CY7C1163V18 – 1M x 18
CY7C1165V18 – 512K x 36
Selection Guide
400 MHz
375 MHz
333 MHz
300 MHz
Unit
Maximum Operating Frequency
400
375
333
300
MHz
Maximum Operating Current
1080
1020
920
850
mA
Note
1. The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ
= 1.4V to VDD.
Cypress Semiconductor Corporation
Document Number: 001-06582 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 15, 2007
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Logic Block Diagram (CY7C1161V18)
DOFF
Write
Reg
Address
Register
Read Add. Decode
CLK
Gen.
Write
Reg
512K x 8 Array
K
K
Write
Reg
512K x 8 Array
19
Write
Reg
512K x 8 Array
Address
Register
512K x 8 Array
A(18:0)
8
Write Add. Decode
D[7:0]
A(18:0)
19
RPS
Control
Logic
Read Data Reg.
32
VREF
WPS
CQ
16
Reg.
Control
Logic
NWS[1:0]
CQ
16
Reg.
Q[7:0]
Reg.
8
8
QVLD
Logic Block Diagram (CY7C1176V18)
DOFF
VREF
WPS
BWS[0]
Write
Reg
Address
Register
Read Add. Decode
CLK
Gen.
Write
Reg
512K x 9 Array
K
K
Write
Reg
512K x 9 Array
19
Write
Reg
512K x 9 Array
Address
Register
512K x 9 Array
A(18:0)
9
Write Add. Decode
D[8:0]
A(18:0)
19
RPS
Control
Logic
Read Data Reg.
36
Control
Logic
CQ
CQ
18
Reg.
18
Reg.
Q[8:0]
Reg.
9
9
Document Number: 001-06582 Rev. *C
QVLD
Page 2 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Logic Block Diagram (CY7C1163V18)
DOFF
Write
Reg
Address
Register
Read Add. Decode
CLK
Gen.
Write
Reg
256K x 18 Array
K
K
Write
Reg
256K x 18 Array
18
Write
Reg
256K x 18 Array
Address
Register
256K x 18 Array
A(17:0)
18
Write Add. Decode
D[17:0]
18
A(17:0)
RPS
Control
Logic
Read Data Reg.
72
VREF
WPS
CQ
36
Reg.
Control
Logic
BWS[1:0]
CQ
36
Reg.
Q[17:0]
Reg.
18
18
QVLD
Logic Block Diagram (CY7C1165V18)
DOFF
VREF
WPS
BWS[3:0]
Address
Register
Read Add. Decode
CLK
Gen.
Write
Reg
128K x 36 Array
K
K
Write
Reg
128K x 36 Array
17
Write
Reg
128K x 36 Array
Address
Register
Write
Reg
128K x 36 Array
A(16:0)
36
Write Add. Decode
D[35:0]
17
A(16:0)
RPS
Control
Logic
Read Data Reg.
144
Control
Logic
CQ
CQ
72
Reg.
72
Reg.
Q[35:0]
Reg.
36
36
Document Number: 001-06582 Rev. *C
QVLD
Page 3 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Pin Configurations
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1161V18 (2M x 8)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
WPS
NWS1
K
NC/144M
RPS
A
NC/36M
CQ
B
C
D
E
F
G
H
J
K
L
M
N
P
NC
NC
NC
NC
NC
D4
NC
NC
NC
A
VSS
VSS
NC/288M
A
NWS0
A
VSS
A
VSS
VSS
NC
NC
VSS
K
NC
VSS
NC
NC
NC
Q3
D3
NC
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
NC
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DOFF
NC
D5
VREF
NC
Q5
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
NC
NC
VREF
Q1
NC
ZQ
D1
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
R
NC
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
NC
NC
NC
D7
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D0
NC
NC
NC
Q7
A
A
QVLD
A
A
NC
NC
NC
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
CY7C1176V18 (2M x 9)
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/72M
A
WPS
NC
K
NC/144M
RPS
A
NC/36M
CQ
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q4
NC
NC
NC
D5
NC
NC
VSS
VSS
A
NC
VSS
A
VSS
VSS
VSS
NC
VSS
NC
NC
D4
NC
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
NC
NC
DOFF
NC
NC
NC
VDDQ
VDD
VSS
VDDQ
NC
Q6
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
NC
NC
D6
VREF
NC
VDD
VDD
VDD
VDD
NC
VREF
Q2
NC
ZQ
D2
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
R
NC
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
NC
NC
NC
D8
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D1
NC
NC
NC
Q8
A
A
QVLD
A
A
NC
D0
Q0
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
Document Number: 001-06582 Rev. *C
Page 4 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Pin Configurations (continued)
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1163V18 (1M x 18)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
2
3
NC/144M NC/36M
4
5
6
7
8
9
10
11
WPS
BWS1
K
NC/288M
RPS
A
NC/72M
CQ
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
NC
NC
NC
D11
D10
VSS
VSS
A
VSS
NC
VSS
A
VSS
VSS
VSS
NC
Q10
Q7
NC
D8
D7
NC
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
D5
DOFF
NC
VREF
NC
VDDQ
D14
VDDQ
VDDQ
VDD
VDD
VSS
VSS
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
NC
VREF
Q4
ZQ
D4
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
NC
NC
NC
D17
D16
Q16
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
Q1
NC
D2
D1
NC
NC
Q17
A
A
QVLD
A
A
NC
D0
Q0
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
9
10
CY7C1165V18 (512K x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
2
3
NC/288M NC/72M
4
5
6
7
8
WPS
BWS2
K
BWS1
RPS
BWS3
A
K
BWS0
A
VSS
A
D17
Q17
Q8
VSS
VSS
D16
Q16
Q7
D15
D8
D7
Q27
Q18
D18
A
D27
D28
Q28
D20
D19
Q19
VSS
VSS
Q29
D29
Q20
Q30
D30
Q21
D21
DOFF
D31
D22
VREF
Q31
Q32
NC/36M NC/144M
11
CQ
VSS
NC
VSS
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
Q14
Q22
VDDQ
D23
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
D14
Q13
VDDQ
D12
D13
VREF
Q4
Q5
D5
ZQ
D4
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
D33
D34
Q34
D26
D25
Q25
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
D10
Q10
Q1
D9
D2
D1
Q35
D35
Q26
A
A
QVLD
A
A
Q9
D0
Q0
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
Document Number: 001-06582 Rev. *C
Page 5 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Pin Definitions
Pin Name
IO
Pin Description
D[x:0]
InputData Input Signals. Sampled on the rising edge of K and K clocks during valid write operations.
Synchronous CY7C1161V18−D[7:0]
CY7C1176V18−D[8:0]
CY7C1163V18−D[17:0]
CY7C1165V18−D[35:0]
WPS
InputWrite Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active,
Synchronous a write operation is initiated. Deasserting deselects the write port. Deselecting the write port causes
D[x:0] to be ignored.
NWS0, NWS1,
InputNibble Write Select 0, 1 − Active LOW (CY7C1161V18 Only). Sampled on the rising edge of the
Synchronous K and K clocks during Write operations. Used to select the nibble that is written into the device. NWS0
controls D[3:0] and NWS1 controls D[7:4].
All the nibble write selects are sampled on the same edge as the data. Deselecting a nibble write
select causes the corresponding nibble of data to be ignored and not written into the device.
BWS0, BWS1,
BWS2, BWS3
InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks
Synchronous during write operations. Used to select the byte that is written into the device during the current portion
of the write operation. Bytes not written remain unaltered.
CY7C1176V18 − BWS0 controls D[8:0].
CY7C1163V18 − BWS0 controls D[8:0] and BWS1 controls D[17:9]..
CY7C1165V18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
causes the corresponding byte of data to be ignored and not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock duing active read and write operations.
Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 2M x 8 (4 arrays each of 512K x 8) for CY7C1161V18, 2M x 9 (4 arrays each of 512K
x 9) for CY7C1176V18, 1M x 18 (4 arrays each of 256K x 18) for CY7C1163V18, and 512K x 36 (4
arrays each of 128K x 36) for CY7C1165V18. Therefore, only 19 address inputs are needed to access
the entire memory array of CY7C1161V18 and CY7C1176V18, 18 address inputs for CY7C1163V18,
and 17 address inputs for CY7C1165V18. These inputs are ignored when the appropriate port is
deselected.
Q[x:0]
OutputsData Output Signals. These pins drive out the requested data during a read operation. Valid data
Synchronous is driven out on the rising edge of both the K and K clocks during read operations or K and K when
in single clock mode. When the read port is deselected, Q[x:0] are automatically tri-stated.
CY7C1161V18 − Q[7:0].
CY7C1176V18 − Q[8:0].
CY7C1163V18 − Q[17:0].
CY7C1165V18 − Q[35:0].
RPS
InputRead Port Select − Active LOW. Sampled on the rising edge of positive input clock (K). When active,
Synchronous a read operation is initiated. Deasserting causes the read port to be deselected. When deselected,
the pending access is enabled to complete and the output drivers are automatically tri-stated following
the next rising edge of the K clock. Each read access consists of a burst of four sequential transfers.
QVLD
Valid Output
Indicator
Valid Output Indicator. Indicates valid output data. QVLD is edge-aligned with CQ and CQ.
K
InputClock
Positive Input Clock Input. Rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
InputClock
Negative Input Clock Input. K is used to capture synchronous inputs presented to the device and
to drive out data through Q[x:0] when in single clock mode.
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the QDR-II+. The timings for the echo clocks are shown in “Switching Characteristics”
on page 23.
CQ
Document Number: 001-06582 Rev. *C
Page 6 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Pin Definitions (continued)
Pin Name
IO
Pin Description
CQ
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the QDR-II+. The timings for the echo clocks are shown in “Switching Characteristics”
on page 23.
ZQ
Input
Output Impedance Matching Input. Used to tune the device outputs to the system data bus
impedance. CQ, CQ and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin is connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned-off operation are different from those listed in this data sheet. For normal
operation, this pin is connected to a pull up through a 10 KΩ or less pull up resistor. The device
behaves in QDR-I mode when the DLL is turned off. In this mode, the device operates at a frequency
of up to 167 MHz with QDR-I timing.
TDO
Output
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
InputReference
TDO for JTAG.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and
AC measurement points.
Power Supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power Supply Power supply inputs for the outputs of the device.
Document Number: 001-06582 Rev. *C
Page 7 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Functional Overview
Write Operations
The CY7C1161V18, CY7C1176V18, CY7C1163V18, and
CY7C1165V18 are synchronous pipelined burst SRAMs
equipped with both a read port and a write port. The read port is
dedicated to read operations and the write port is dedicated to
write operations. Data flows into the SRAM through the write port
and out through the read port. These devices multiplex the
address inputs in order to minimize the number of address pins
required. By having separate read and write ports, the QDR-II+
completely eliminates the need to “turn-around” the data bus. It
avoids any possible data contention, thereby, simplifying system
design. Each access consists of four 8-bit data transfers in the
case of CY7C1161V18, four 9-bit data transfers in the case of
CY7C1176V18, four 18-bit data transfers in the case of
CY7C1163V18, and four 36-bit data transfers in the case of
CY7C1165V18 in two clock cycles.
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise, the data presented to D[17:0] is latched and stored into
the lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K), the information presented to D[17:0] is also stored
into the write data register, provided BWS[1:0] are both asserted
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Write accesses are
initiated on every other rising edge of the positive input clock (K).
Doing so pipelines the data flow such that 18 bits of data can be
transferred into the device on every rising edge of the input
clocks (K and K).
Accesses for both ports are initiated on the positive input clock
(K). All synchronous input and output timings are referenced to
the rising edge of the Input clocks (K/K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the Input clocks (K and K) also.
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1163V18 is described in the following sections. The same
basic descriptions apply to CY7C1161V18, CY7C1176V18, and
CY7C1165V18.
Read Operations
The CY7C1163V18 is organized internally as four arrays of 256K
x 18. Accesses are completed in a burst of four sequential 18-bit
data words. Read operations are initiated by asserting RPS
active at the rising edge of the positive input clock (K). The
address presented to address inputs are stored in the Read
address register. Following the next two K clock rises, the corresponding lowest order 18-bit word of data is driven onto the
Q[17:0] using K as the output timing reference. On the subsequent rising edge of K, the next 18-bit data word is driven onto
the Q[17:0]. This process continues until all four 18-bit data words
have been driven out onto Q[17:0]. The requested data is valid
0.45 ns from the rising edge of the Input clock K or K. In order to
maintain the internal logic, each read access must be allowed to
complete. Each read access consists of four 18-bit data words
and takes two clock cycles to complete. Therefore, read
accesses to the device cannot be initiated on two consecutive K
clock rises. The internal logic of the device ignores the second
read request. Read accesses can be initiated on every other K
clock rise. Doing so pipelines the data flow such that data is
transferred out of the device on every rising edge of the input
clocks K and K.
When the read port is deselected, the CY7C1163V18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the negative input clock (K). This allows for a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Document Number: 001-06582 Rev. *C
When deselected, the write port ignores all inputs after the
pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C1163V18. A
write operation is initiated as described in the Write Operations
section above. The bytes that are written are determined by
BWS0 and BWS1, which are sampled with each set of 18-bit data
words. Asserting the appropriate byte write select input during
the data portion of a write enables the data being presented to
be latched and written into the device. Deasserting the byte write
select input during the data portion of a write allows the data
stored in the device for that byte to remain unaltered. This feature
is used to simplify read, modify, and write operations to a byte
write operation.
Concurrent Transactions
The read and write ports on the CY7C1163V18 operate
completely independent of one another. Because each port
latches the address inputs on different clock edges, the user can
read or write to any location, regardless of the transaction on the
other port. If the ports access the same location when a read
follows a write in successive clock cycles, the SRAM delivers the
most recent information associated with the specified address
location. This includes forwarding data from a write cycle initiated
on the previous K clock rise.
Read accesses and write access are scheduled such that one
transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports are deselected, the
read port takes priority. If a read is initiated on the previous cycle,
the write port assumes priority (because read operations cannot
be initiated on consecutive cycles). If a write was initiated on the
previous cycle, the read port assumes priority (because write
operations cannot be initiated on consecutive cycles). Therefore,
asserting both port selects active from a deselected state results
in alternating read or write operations initiated, with the first
access being a read.
Page 8 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Depth Expansion
Valid Data Indicator (QVLD)
The CY7C1163V18 has a port select input for each port. This
enables easy depth expansion. Both port selects are only
sampled on the rising edge of the positive input clock (K). Each
port select input can deselect the specified port. Deselecting a
port does not affect the other port. All pending transactions (read
and write) are completed before the device is deselected.
QVLD is provided on the QDR-II+ to simplify data capture on high
speed systems. The QVLD is generated by the QDR-II+ device
along with data output. This signal is also edge-aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5X the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR-II+ to simplify data capture
on high speed systems. Two echo clocks are generated by the
QDR-II+. CQ is referenced with respect to K and CQ is referenced with respect to K. These are free running clocks and are
synchronized to the input clock of the QDR-II+. The timings for
the echo clocks are shown in the AC timing table.
Document Number: 001-06582 Rev. *C
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. The DLL may be disabled by applying ground to the
DOFF pin. When the DLL is turned off, the device behaves in
QDR-I mode (with 1.0 cycle latency and a longer access time).
For more information, refer to the application note, “DLL Considerations in QDRII/DDRII/QDRII+/DDRII+.” The DLL can also be
reset by slowing or stopping the input clocks K and K for a
minimum of 30 ns. However, it is not necessary for the DLL to be
reset in order to lock to the desired frequency. During power up
when the DOFF is tied HIGH, the DLL is locked after 2048 cycles
of stable clock.
Page 9 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Application Example
Figure 1 shows four QDR-II+ used in an application.
Figure 1. Application Example
ZQ
CQ/CQ
SRAM #1
Q
D
A RPS WPS BWS K K
Vt
R
RQ = 250ohms
ZQ
CQ/CQ
SRAM #4
Q
RPS WPS BWS K K
D
A
DATA IN
DATA OUT
Address
R
R
BUS MASTER RPS
(CPU or ASIC) WPS
RQ = 250ohms
Vt
Vt
BWS
CLKIN/CLKIN
Source K
Source K
R = 50ohms, Vt = VDDQ /2
Truth Table
The truth table for the CY7C1161V18, CY7C1176V18, CY7C1163V18, and CY7C1165V18 follows.[3, 4, 5, 6, 7, 8]
Operation
K
RPS WPS
DQ
DQ
DQ
DQ
Write Cycle: Load
address on rising edge of
K; input write data on two
consecutive K and K rising
edges.
L-H
H[9]
Read Cycle (2.5 Cycle
Latency): Load address on
rising edge of K; wait one
and a half cycle; read data
on two consecutive K and
K rising edges.
L-H
L[10]
X
Q(A) at K(t + 2) ↑ Q(A + 1) at K(t + 3) ↑ Q(A + 2) at K(t + 3)↑ Q(A + 3) at K(t + 4) ↑
NOP: No operation.
L-H
H
H
D=X
Q = High Z
D=X
Q = High Z
D=X
Q = High Z
D=X
Q = High Z
Stopped
X
X
Previous State
Previous State
Previous State
Previous State
Standby: Clock stopped.
L[10]
D(A) at K(t + 1) ↑ D(A + 1) at K(t + 1) ↑ D(A + 2) at K(t + 2) ↑ D(A + 3) at K(t + 2) ↑
Notes
2. The above application shows four QDR-II+ being used.
3. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.
4. Device powers up deselected and the outputs in a tri-state condition.
5. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.
6. “t” represents the cycle at which a read or write operation is started. t + 1, t + 2, t + 3 and t + 4 are the first, second, third, and fourth clock cycles, respectively succeeding
the “t” clock cycle.
7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.
8. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
9. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
10. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
second read or write request.
Document Number: 001-06582 Rev. *C
Page 10 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Write Cycle Descriptions
The write cycle descriptions of CY7C1161V18 and CY7C1163V18 follow.[3, 11]
BWS0/ BWS1/
K
K
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
NWS0
NWS1
L
Comments
During the data portion of a write sequence:
CY7C1161V18 − both nibbles (D[7:0]) are written into the device.
CY7C1163V18 − both bytes (D[17:0]) are written into the device.
L-H During the data portion of a write sequence:
CY7C1161V18 − both nibbles (D[7:0]) are written into the device.
CY7C1163V18 − both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C1161V18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1163V18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence:
CY7C1161V18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1163V18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence:
CY7C1161V18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1163V18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence:
CY7C1161V18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1163V18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
The write cycle operation of CY7C1176V18 follows.[3, 11]
BWS0
K
K
L
L–H
–
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
–
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device during this portion of a write operation.
H
–
L–H
No data is written into the device during this portion of a write operation.
Note
11. Is based upon a Write cycle was initiated per the Write Cycle Description Truth Table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different
portions of a Write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-06582 Rev. *C
Page 11 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
The write cycle descriptions of CY7C1165V18 follows.[3, 11]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
Document Number: 001-06582 Rev. *C
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During thedata portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Page 12 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard 1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively
be connected to VDD through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state which does not interfere with the operation of the device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to leave
this pin unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see “TAP Controller State
Diagram” on page 15 TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSb) on any register.
Instruction Register
Three-bit instructions are serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins as shown in “TAP Controller Block Diagram” on
page 16. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.
When the TAP controller is in the Capture IR state, the two least
significant bits are loaded with a binary “01” pattern to allow fault
isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables data to be shifted through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can
be used to capture the contents of the Input and Output ring.
The “Boundary Scan Order” on page 19 show the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSb of the register is connected to
TDI and the LSb is connected to TDO.
Test Data Out (TDO)
Identification (ID) Register
The TDO output pin is used to serially clock data out from the
registers. The output is active depending upon the current state
of the TAP state machine, see “Instruction Codes” on page 18
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSb) of any register.
The ID register is loaded with a vendor-specific 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in the “Identification Register Definitions”
on page 18.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high Z state.
TAP Instruction Set
TAP Registers
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the “Instruction
Codes” on page 18. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described below.
Registers are connected between the TDI and TDO pins and
enables data to be scanned into and out of the SRAM test
circuitry. Only one register is selected at a time through the
instruction registers. Data is serially loaded into the TDI pin on
the rising edge of TCK. Data outputs on the TDO pin on the falling
edge of TCK.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction once it is shifted in, the TAP controller needs to be
moved into the Update-IR state.
Document Number: 001-06582 Rev. *C
Page 13 of 29
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CY7C1176V18
CY7C1163V18
CY7C1165V18
IDCODE
The IDCODE instruction causes a vendor-specific 32-bit code to
be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and enables
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction is
loaded into the instruction register upon power up or whenever
the TAP controller is given a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register to
be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High Z state until the next command is given
during the Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a
snapshot of data on the inputs and output pins is captured in the
boundary scan register.
The user must be aware that the TAP controller clock only operates at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a
large difference in the clock frequencies, it is possible that during
the Capture-DR state, an input or output undergoes a transition.
The TAP then tries to capture a signal while in transition (metastable state). This does not harm the device but there is no guarantee as to the value that is captured. Repeatable results are not
possible.
PRELOAD enables an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
before the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required—that is, while data captured
is shifted out, the preloaded data is shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be driven
out through the system output pins. This instruction also selects
the boundary scan register to be connected for serial access
between the TDI and TDO in the shift-DR controller state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller puts the
output bus into a tri-state mode.
The boundary scan register has a special bit located at bit 47.
When this scan cell, called the “extest output bus tri-state”, is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a High
Z condition.
To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal is stabilized long enough
to meet the TAP controller's capture setup plus hold times (tCS
and tCH). The SRAM clock input is not captured correctly if there
is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to
capture all other signals and simply ignore the value of the CK
and CK captured in the boundary scan register.
This bit is set by entering the SAMPLE/PRELOAD or EXTEST
command, and then shifting the desired bit into that cell, during
the Shift-DR state. During Update-DR, the value loaded into that
shift register cell latches into the preload register. When the
EXTEST instruction is entered, this bit directly controls the output
Q-bus pins. Note that this bit is preset HIGH to enable the output
when the device is powered up, and also when the TAP controller
is in the Test Logic Reset state.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
Document Number: 001-06582 Rev. *C
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 14 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
TAP Controller State Diagram
Figure 2. Tap Controller State Diagram[12]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
0
SHIFT-DR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
1
0
SHIFT-IR
1
0
1
0
UPDATE-IR
1
0
Note
12. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-06582 Rev. *C
Page 15 of 29
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CY7C1176V18
CY7C1163V18
CY7C1165V18
TAP Controller Block Diagram
Figure 3. Tap Controller Block Diagram
0
Bypass Register
Selection
Circuitry
TDI
2
1
0
1
0
Instruction Register
31 30 29
.
.
2
Selection
Circuitry
TDO
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
The Tap Electrical Characteristics table over the operating range follows.[13, 14, 15]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 µA
1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
0.2
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and Output Load Current
0.65 VDD VDD + 0.3
GND ≤ VI ≤ VDD
V
–0.3
0.35 VDD
V
–5
5
µA
Notes
13. These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
14. Overshoot: VIH(AC) < VDDQ + 0.35V (pulse width less than tCYC/2), Undershoot: VIL(AC) > −0.3V (pulse width less than tCYC/2)
15. All voltage referenced to ground.
Document Number: 001-06582 Rev. *C
Page 16 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
TAP AC Switching Characteristics
The Tap AC Switching Characteristics over the operating range follows.[16, 17]
Parameter
Description
Min
Max
Unit
tTCYC
TCK Clock Cycle Time
50
ns
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
20
MHz
Setup Times
Hold Times
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
TAP Timing and Test Conditions
The Tap Timing and Test Conditions for the CY7C1161V18, CY7C1176V18, CY7C1163V18, and CY7C1165V18 follows.[17]
0.9V
ALL INPUT PULSES
50Ω
1.8V
TDO
0.9V
0V
Z0 = 50Ω
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Notes
16. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
17. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Document Number: 001-06582 Rev. *C
Page 17 of 29
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Identification Register Definitions
Instruction Field
Value
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
000
000
000
000
Revision Number
(31:29)
Description
Version number.
Cypress Device ID 11010010001000101 11010010001001101 11010010001010101 11010010001100101 Defines the type of
(28:12)
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
ID Register
Presence (0)
Enables unique
identification of
SRAM vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between
TDI and TDO. This forces all SRAM output drivers to a High Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output ring contents. Places the boundary scan register
between TDI and TDO. This operation does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect
SRAM operation.
Document Number: 001-06582 Rev. *C
Page 18 of 29
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Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
1
6P
27
11H
54
7B
81
3G
28
10G
55
6B
82
2G
2
6N
29
9G
56
6A
83
1J
3
7P
30
11F
57
5B
84
2J
4
7N
31
11G
58
5A
85
3K
5
7R
32
9F
59
4A
86
3J
6
8R
33
10F
60
5C
87
2K
7
8P
34
11E
61
4B
88
1K
8
9R
35
10E
62
3A
89
2L
9
11P
36
10D
63
1H
90
3L
10
10P
37
9E
64
1A
91
1M
11
10N
38
10C
65
2B
92
1L
12
9P
39
11D
66
3B
93
3N
13
10M
40
9C
67
1C
94
3M
14
11N
41
9D
68
1B
95
1N
15
9M
42
11B
69
3D
96
2M
16
9N
43
11C
70
3C
97
3P
17
11L
44
9B
71
1D
98
2N
18
11M
45
10B
72
2C
99
2P
19
9L
46
11A
73
3E
100
1P
20
10L
47
Internal
74
2D
101
3R
21
11K
48
9A
75
2E
102
4R
22
10K
49
8B
76
1E
103
4P
23
9J
50
7C
77
2F
104
5P
24
9K
51
6C
78
3F
105
5N
25
10J
52
8A
79
1G
106
5R
26
11J
53
7A
80
1F
Document Number: 001-06582 Rev. *C
Page 19 of 29
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Power Up Sequence in QDR-II+ SRA
During power up, when the DOFF is tied HIGH, the DLL gets
locked after 2048 cycles of stable clock. .QDR-II+ SRAMs must
be powered up and initialized in a predefined manner to prevent
undefined operations.
Power Up Sequence
■
Apply power with DOFF tied HIGH (All other inputs can be
HIGH or LOW)
DLL Constraints
■
DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var
■
The DLL functions at frequencies down to 120 MHz
■
If the input clock is unstable and the DLL is enabled, then the
DLL locks onto an incorrect frequency, causing unstable SRAM
behavior. To avoid this, provide 2048 cycles stable clock to
relock to the desired clock frequency
— Apply VDD before VDDQ
— Apply VDDQ before VREF or at the same time as VREF
■
Provide stable power and clock (K, K) for 2048 cycles to lock
the DLL
Power Up Waveforms
~
~
Figure 4. Power Up Waveforms
K
~
~
K
Unstable Clock
> 2048 Stable Clock
Start Normal
Operation
Clock Start (Clock Starts after VDD/VDDQ is Stable)
VDD/VDDQ
DOFF
Document Number: 001-06582 Rev. *C
VDD/VDDQ Stable (< + 0.1V DC per 50 ns)
Fix HIGH (tie to VDDQ)
Page 20 of 29
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Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Operating Range
Supply Voltage on VDD Relative to GND .......–0.5V to + 2.9V
Supply Voltage on VDDQ Relative to GND ..... –0.5V to + VDD
DC Applied to Outputs in High Z ........ –0.5V to VDDQ + 0.3V
DC Input Voltage[14] ............................... –0.5V to VDD + 0.3V
Range
Commercial
Industrial
Ambient
Temperature (TA)
VDD[18]
VDDQ[18]
0°C to +70°C
1.8 ± 0.1V
1.4V to
VDD
–40°C to +85°C
Electrical Characteristics
The DC Electrical Characteristics over the operating range follows.[15]
Parameter
Description
VDD
Power Supply Voltage
VDDQ
IO Supply Voltage
VOH
Output HIGH Voltage
VOL
VOH(LOW)
Test Conditions
Min
Typ
Max
Unit
1.7
1.8
1.9
V
1.4
1.5
VDD
V
Note 19
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
Output LOW Voltage
Note 20
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
Output HIGH Voltage
IOH = −0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
VREF
Input Reference Voltage[21]
Typical Value = 0.75V
IDD
VDD Operating Supply
ISB1
Automatic Power Down
Current
VSS
0.2
V
VREF + 0.1
VDDQ + 0.15
V
–0.15
VREF – 0.1
V
−2
2
µA
2
µA
0.95
V
VDD = Max, IOUT = 0 mA, 300 MHz
f = fmax = 1/tCYC
333 MHz
850
mA
920
mA
375 MHz
1020
mA
400 MHz
1080
mA
300 MHz
250
mA
333 MHz
260
mA
375 MHz
290
mA
400 MHz
300
mA
Max VDD,
Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fmax = 1/tCYC,
Inputs Static
−2
0.68
0.75
AC Electrical Characteristics
Over the operating range follows.[21]
Min
Typ
Max
Unit
VIH
Parameter
Input HIGH Voltage
Description
Test Conditions
VREF + 0.2
–
VDDQ + 0.24
V
VIL
Input LOW Voltage
–0.24
–
VREF – 0.2
V
Notes
18. Power up: Is based upon a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
19. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
20. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
21. VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller.
Document Number: 001-06582 Rev. *C
Page 21 of 29
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Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 1.8V
VDDQ = 1.5V
Max
Unit
5
pF
6
pF
7
pF
165 FBGA
Package
Unit
17.2
°C/W
4.15
°C/W
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
ΘJA
Thermal Resistance
(junction to ambient)
ΘJC
Thermal Resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
VREF = 0.75V
VREF
0.75V
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
ZQ
RL = 50Ω
VREF = 0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under
Test ZQ
RQ =
250Ω
(a)
0.75V
INCLUDING
JIG AND
SCOPE
5 pF
[22]
0.25V
Slew Rate = 2 V/ns
RQ =
250Ω
(b)
Notes
22. Unless otherwise noted, test conditions are based upon signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.
Document Number: 001-06582 Rev. *C
Page 22 of 29
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Switching Characteristics
Over the operating range[22, 23]
Cypress Consortium
Parameter Parameter
Description
VDD(Typical) to the First Access[24]
tPOWER
400 MHz
375 MHz
333 MHz
300 MHz
Min Max Min Max Min Max Min Max
1
–
1
–
Unit
1
–
1
–
ms
tCYC
tKHKH
K Clock Cycle Time
2.50 8.40 2.66 8.40
3.0
8.40
3.3
8.40
ns
tKH
tKHKL
Input Clock (K/K) HIGH
0.4
–
0.4
–
0.4
–
0.4
–
tCYC
tKL
tKLKH
Input Clock (K/K) LOW
0.4
–
0.4
–
0.4
–
0.4
–
tCYC
tKHKH
tKHKH
K Clock Rise to K Clock Rise
(rising edge to rising edge)
1.06
–
1.13
–
1.28
–
1.40
–
ns
Setup Times
tSA
tAVKH
Address Setup to K Clock Rise
0.4
–
0.4
–
0.4
–
0.4
–
ns
tSC
tIVKH
Control Setup to K Clock Rise (RPS, WPS)
0.4
–
0.4
–
0.4
–
0.4
–
ns
tSCDDR
tIVKH
Double Data Rate Control Setup to Clock (K, K) 0.28
Rise (BWS0, BWS1, BWS2, BWS3)
–
0.28
–
0.28
–
0.28
–
ns
tSD
tDVKH
D[X:0] Setup to Clock (K/K) Rise
0.28
–
0.28
–
0.28
–
0.28
–
ns
–
0.4
–
0.4
–
0.4
–
ns
Hold Times
tHA
tKHAX
Address Hold after K Clock Rise
0.4
tHC
tKHIX
Control Hold after K Clock Rise (RPS, WPS)
0.4
–
0.4
–
0.4
–
0.4
–
ns
tHCDDR
tKHIX
Double Data Rate Control Hold after Clock (K/K) 0.28
Rise (BWS0, BWS1, BWS2, BWS3)
–
0.28
–
0.28
–
0.28
–
ns
tHD
tKHDX
D[X:0] Hold after Clock (K/K) Rise
0.28
–
0.28
–
0.28
–
0.28
–
ns
–
0.45
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
–0.45
–
ns
–
0.45
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
–0.45
–
ns
–
0.2
0.2
ns
Output Times
tCO
tCHQV
K/K Clock Rise to Data Valid
tDOH
tCHQX
Data Output Hold after Output K/K Clock Rise
(Active to Active)
tCCQO
tCHCQV
K/K Clock Rise to Echo Clock Valid
tCQOH
tCHCQX
Echo Clock Hold after K/K Clock Rise
tCQD
tCQHQV
Echo Clock High to Data Valid
tCQDOH
tCQHQX
Echo Clock High to Data Invalid
–0.2
–
–0.2
–
–0.2
–
–0.2
–
ns
tCQH
tCQHCQL
Output Clock (CQ/CQ) HIGH[25]
0.81
–
0.88
–
1.03
–
1.15
–
ns
tCQHCQH
tCQHCQH
CQ Clock Rise to CQ Clock Rise[25]
(rising edge to rising edge)
0.81
–
0.88
–
1.03
–
1.15
–
ns
tCHZ
tCHQZ
Clock (K/K) Rise to High Z (Active to High Z)[26, 27]
–
0.45
–
0.45
–
0.45
–
0.45
ns
tCLZ
tCHQX1
Clock (K/K) Rise to Low Z[26, 27]
–0.45
–
–0.45
–
–0.45
–
–0.45
–
ns
tQVLD
tQVLD
Echo Clock High to QVLD Valid[28]
–0.20 0.20 –0.20 0.20 –0.20 0.20 –0.20 0.20
0.2
0.2
ns
Notes
23. When a part with a maximum frequency above 300 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
24. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation can
be initiated.
25. These parameters are extrapolated from the input timing parameters (tKHKH – 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already
included in the tKHKH). These parameters are only guaranteed by design and are not tested in production.
26. tCHZ, tCLZ are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured ± 100 mV from steady state voltage.
27. At any given voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
28. tQVLD spec is applicable for both rising and falling edges of QVLD signal.
Document Number: 001-06582 Rev. *C
Page 23 of 29
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Switching Characteristics
Over the operating range[22, 23] (continued)
Cypress Consortium
Parameter Parameter
Description
400 MHz
375 MHz
333 MHz
300 MHz
Min Max Min Max Min Max Min Max
Unit
DLL Timing
tKC Var
tKC Var
Clock Phase Jitter
tKC lock
tKC lock
DLL Lock Time (K)
tKC Reset
tKC Reset
[29]
K Static to DLL Reset
–
0.20
–
0.20
–
0.20
–
0.20
ns
2048
–
2048
–
2048
–
2048
–
Cycles
30
–
30
–
30
–
30
–
ns
Note
29. Hold to >VIH or <VIL.
Document Number: 001-06582 Rev. *C
Page 24 of 29
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Switching Waveforms
Read/Write/Deselect Sequence
Figure 6. Waveform for 2.5 Cycle Read Latency[30, 31, 32]
NOP
1
WRITE
3
READ
2
READ
4
NOP
6
WRITE
5
7
8
K
t KH
t KL
t CYC
t KHKH
K
RPS
t SC
tHC
t SC
t HC
WPS
A
A0
t SA
A1
A3
A2
t HD
t HA
t SD
D
t HD
t SD
D10
D11
D12
D30
D13
D31
D32
tQVLD
t QVLD
QVLD
D33
t CLZ
tDOH
t
CO
Q
Q00
tCQDOH
tCQD
Q01
(Read Latency = 2.5 Cycles)
Q02
Q03
Q20
Q21
tCHZ
Q22
Q23
tCCQO
tCQOH
CQ
t CQH
t CQHCQH
tCQOH
t CCQO
CQ
DON’T CARE
UNDEFINED
Notes
30. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
31. Outputs are disabled (High Z) one clock cycle after a NOP.
32. In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-06582 Rev. *C
Page 25 of 29
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Ordering Information
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or visit www.cypress.com
for actual products offered.
Speed
(MHz)
400
Ordering Code
CY7C1161V18-400BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C1176V18-400BZC
CY7C1163V18-400BZC
CY7C1165V18-400BZC
CY7C1161V18-400BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-400BZXC
CY7C1163V18-400BZXC
CY7C1165V18-400BZXC
CY7C1161V18-400BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1176V18-400BZI
CY7C1163V18-400BZI
CY7C1165V18-400BZI
CY7C1161V18-400BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-400BZXI
CY7C1163V18-400BZXI
CY7C1165V18-400BZXI
375
CY7C1161V18-375BZC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1176V18-375BZC
CY7C1163V18-375BZC
CY7C1165V18-375BZC
CY7C1161V18-375BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-375BZXC
CY7C1163V18-375BZXC
CY7C1165V18-375BZXC
CY7C1161V18-375BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1176V18-375BZI
CY7C1163V18-375BZI
CY7C1165V18-375BZI
CY7C1161V18-375BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-375BZXI
CY7C1163V18-375BZXI
CY7C1165V18-375BZXI
Document Number: 001-06582 Rev. *C
Page 26 of 29
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Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or visit www.cypress.com
for actual products offered.
Speed
(MHz)
333
Ordering Code
CY7C1161V18-333BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C1176V18-333BZC
CY7C1163V18-333BZC
CY7C1165V18-333BZC
CY7C1161V18-333BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-333BZXC
CY7C1163V18-333BZXC
CY7C1165V18-333BZXC
CY7C1161V18-333BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1176V18-333BZI
CY7C1163V18-333BZI
CY7C1165V18-333BZI
CY7C1161V18-333BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-333BZXI
CY7C1163V18-333BZXI
CY7C1165V18-333BZXI
300
CY7C1161V18-300BZC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1176V18-300BZC
CY7C1163V18-300BZC
CY7C1165V18-300BZC
CY7C1161V18-300BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-300BZXC
CY7C1163V18-300BZXC
CY7C1165V18-300BZXC
CY7C1161V18-300BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1176V18-300BZI
CY7C1163V18-300BZI
CY7C1165V18-300BZI
CY7C1161V18-300BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1176V18-300BZXI
CY7C1163V18-300BZXI
CY7C1165V18-300BZXI
Document Number: 001-06582 Rev. *C
Page 27 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Package Diagram
Figure 7. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
PIN 1 CORNER
Ø0.50 -0.06 (165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
E
F
F
G
G
H
J
14.00
E
15.00±0.10
15.00±0.10
10
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
A
1.00
5.00
10.00
B
B
13.00±0.10
13.00±0.10
1.40 MAX.
0.15 C
0.53±0.05
0.25 C
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDEC REFERENCE : MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
0.35±0.06
0.36
SEATING PLANE
C
Document Number: 001-06582 Rev. *C
51-85180-*A
Page 28 of 29
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CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document History Page
Document Title: CY7C1161V18/CY7C1176V18/CY7C1163V18/CY7C1165V18, 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
Document Number: 001-06582
REV.
ECN No.
Issue Date
Orig. of
Change
**
430351
See ECN
NXR
New data sheet
*A
461654
See ECN
NXR
Revised the MPNs from
CY7C1176BV18 to CY7C1176V18
CY7C1163BV18 to CY7C1163V18
CY7C1165BV18 to CY7C1165V18
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH,
tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC
Switching Characteristics table
Modified power up waveform
*B
497629
See ECN
NXR
Changed the VDDQ operating voltage to 1.4V to VDD in the Features section, in
Operating Range table and in the DC Electrical Characteristics table
Added foot note in page 1
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Changed VREF (max) spec from 0.85V to 0.95V in the DC Electrical Characteristics table and in the note below the table
Updated foot note 22 to specify Overshoot and Undershoot Spec
Updated ΘJA and ΘJC values
Removed x9 part and its related information
Updated footnote 25
*C
1167806
See ECN VKN/KKVTMP Converted from preliminary to final
Added x8 and x9 parts
Changed IDD values from 800 mA to 1080 mA for 400 MHz, 766 mA to 1020 mA
for 375 MHz, 708 mA to 920 mA for 333 MHz, 663 mA to 850 mA for 300 MHz
Changed ISB values from 235 mA to 300 mA for 400 MHz, 227 mA to 290 mA
for 375 MHz, 212 mA to 260 mA for 333 MHz, 201 mA to 250 mA for 300 MHz
Changed tCYC(max) spec to 8.4 ns for all speed bins
Changed ΘJA value from 13.48 °C/W to 17.2 °C/W
Updated Ordering Information table
Description of Change
© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-06582 Rev. *C
Revised June 15, 2007
Page 29 of 29
QDR™ is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All
product and company names mentioned in this document are the trademarks of their respective holders.
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