PFS 21DQ06

SCHOTTKY RECTIFIER
21DQ06
2 Amp
DO-41
Major Ratings and Characteristics
Description/Features
The 21DQ06 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection.
Characteristics
21DQ06
Units
IF(AV) Rectangular
waveform
2
A
60
V
0.55
V
Very low forward voltage drop
High frequency operation
- 40 to 150
°C
Guard ring for enhanced ruggedness and long term
reliability
Low profile, axial leaded outline
VRRM
VF
@ 2 Apk, TJ = 125°C
TJ
range
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
CASE STYLE AND DIMENSIONS
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1
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21DQ06
Voltage Ratings
Part number
VR
21DQ06
Max. DC Reverse Voltage (V)
60
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
21DQ06
Units
2
A
IF(AV) Max. Average Forward Current
Conditions
50% duty cycle @ TC = 106°C, rectangular wave form
* See Fig. 4
IFSM
Max. Peak One Cycle Non-Repetitive
340
5µs Sine or 3µs Rect. pulse
A
Surge Current * See Fig. 6
60
10ms Sine or 6ms Rect. pulse
EAS
Non-Repetitive Avalanche Energy
4.0
mJ
IAR
Repetitive Avalanche Current
0.5
A
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1 Amps, L = 8 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
21DQ06
Parameters
VFM
IRM
Max. Forward Voltage Drop
(1)
Max. Reverse Leakage Current
(1)
Units
Conditions
Typ.
Max.
0.53
0.67
0.49
0.60
0.75
0.55
V
V
V
@ 2A
@ 4A
@ 2A
0.61
0.67
V
@ 4A
0.02
0.50
mA
TJ = 25 °C
7.0
10
mA
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VR
CT
Typical Junction Capacitance
120
pF
VR = 5VDC(test signal range100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured lead to lead 5mm from package body
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
21DQ06 Units Conditions
TJ
Max. Junction Temperature Range
-40 to 150
°C
Tstg
Max. Storage Temperature Range
-40 to 150
°C
RthJA Max. Thermal Resistance Junction
to Ambient
100
°C/W DC operation
Without cooling fin
RthJL Typical Thermal Resistance Junction
to Lead
25
°C/W DC operation (See Fig. 4)
wt
Approximate Weight
Case Style
(*) dPtot
dTj
<
1
Rth( j-a)
0.33(0.012) g (oz.)
DO-204AL(DO-41)
thermal runaway condition for a diode on its own heatsink
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2
21DQ06
1 00
Reverse C urrent - I R (m A)
10
T J = 150°C
10
125°C
1
100°C
75°C
0 .1
50°C
0.01
25°C
0 .000 1
0
20
J
60
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
T = 125°C
J
1
40
Reverse V oltag e - VR (V )
T = 150°C
T J = 25°C
T
(pF)
100 0
0.1
0
0.3
0.6
0.9
1 .2
Forward V olta ge D rop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Jun ction C apacitan ce - C
Instantan eous Forw ard C urrent - I F (A)
0 .001
10 0
T J = 25°C
10
0
20
40
60
Reverse V olta ge - V R (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
3
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21DQ06
2
Average Power Loss - (W atts)
DC
1 20
90
Square w ave (D = 0.50)
80% Rated V R applied
60
30
= 1/8 inch
D
D
D
D
D
1.6
1.2
0.8
=
=
=
=
=
0.20
0.25
0.33
0.50
0.75
DC
RM S Lim it
0.4
see note (2)
0
0
0
1
2
0
3
Average Forw ard C urren t - I F(AV ) (A)
1
2
3
Average Forw ard C urren t - I F(AV) (A)
Fig. 4 - Maximum Allowable Lead Temperature
Vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
1000
Non-Repe titive Surge C urren t - I FSM (A)
Allowa ble Lead Te m pe ratu re - (° C )
1 50
100
At Any Rated Load C ondition
And W ith Rated V RRM Applied
Follow ing Surge
10
10
100
1000
10000
Square W ave Pulse D uration - t p (m icrosec)
Fig. 6 - Maximum Non-Repetitive Surge Current
(2) Formula used: TL = TJ - (Pd + PdREV) x RthJL ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 5);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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4