CY7C1326H 2-Mbit (128K x 18) Pipelined Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation • 128K × 18 common I/O architecture • 3.3V core power supply • 3.3V/2.5V I/O operation • Fast clock-to-output times — 3.5 ns (for 166-MHz device) — 4.0 ns (for 133-MHz device) • Provide high-performance 3-1-1-1 access rate • User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences • Separate processor and controller address strobes • Synchronous self-timed write • Asynchronous output enable • Offered in JEDEC-standard lead-free 100-pin TQFP package • “ZZ” Sleep Mode Option The CY7C1326H SRAM integrates 128K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:B] and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to two bytes wide as controlled by the Byte Write control inputs. GW when active LOW causes all bytes to be written. The CY7C1326H operates from a +3.3V core power supply while all outputs also operate with either a +3.3V/2.5V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible. Logic Block Diagram A0, A1, A ADDRESS REGISTER 2 MODE A[1:0] BURST Q1 COUNTER AND CLR LOGIC Q0 ADV CLK ADSC ADSP BWB DQB,DQPB WRITE DRIVER DQB,DQPB WRITE REGISTER MEMORY ARRAY BWA SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS DQA,DQPA WRITE DRIVER DQA,DQPA WRITE REGISTER DQs DQPA DQPB E BWE GW CE1 CE2 CE3 ENABLE REGISTER INPUT REGISTERS PIPELINED ENABLE OE Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05675 Rev. *B • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 6, 2006 [+] Feedback CY7C1326H Selection Guide 166 MHz 133 MHz Unit Maximum Access Time 3.5 4.0 ns Maximum Operating Current 240 225 mA Maximum CMOS Standby Current 40 40 mA Pin Configuration 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 NC NC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A 100-pin TQFP Pinout NC NC NC BYTE B VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD CY7C1326H 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC BYTE A MODE A A A A A1 A0 NC/72M NC/36M VSS VDD NC/18M NC/9M A A A A A A NC/4M 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Document #: 38-05675 Rev. *B Page 2 of 15 [+] Feedback CY7C1326H Pin Definitions Name I/O Description A0, A1, A InputAddress Inputs used to select one of the 128K address locations. Sampled at the rising edge of Synchronous the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. BWA, BWB InputByte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM. Synchronous Sampled on the rising edge of CLK. GW InputGlobal Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global Synchronous Write is conducted (ALL bytes are written, regardless of the values on BW[A:B] and BWE). BWE InputByte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be Synchronous asserted LOW to conduct a Byte Write. CLK InputClock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. CE1 InputChip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 Synchronous and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. CE2 InputChip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 Synchronous and CE3 to select/deselect the device. CE2 is sampled only when a new external address is loaded. CE3 InputChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 Synchronous and CE2 to select/deselect the device. Not connected for BGA. Where referenced, CE3 is assumed active throughout this document for BGA. CE3 is sampled only when a new external address is loaded. OE InputOutput Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW, Asynchronous the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state. ADV InputAdvance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it automatSynchronous ically increments the address in a burst cycle. ADSP InputAddress Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted Synchronous LOW, A is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. ADSC InputAddress Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted Synchronous LOW, A is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ZZ InputZZ “Sleep” Input, active HIGH. This input, when HIGH places the device in a non-time-critical “sleep” Asynchronous condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. DQA, DQB DQPA, DQPB I/OBidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the Synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by “A” during the previous clock rise of the Read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP[A:B] are placed in a tri-state condition. VDD Power Supply Power supply inputs to the core of the device. VSS Ground VDDQ I/O Ground MODE InputStatic NC Ground for the device. Ground for the I/O circuitry. Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode pin has an internal pull-up. No Connects. Not internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die. Document #: 38-05675 Rev. *B Page 3 of 15 [+] Feedback CY7C1326H Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The CY7C1326H supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte Write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BW[A:B]) inputs. A Global Write Enable (GW) overrides all Byte Write inputs and writes data to all four bytes. All Writes are simplified with on-chip synchronous self-timed Write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the Write signals (GW, BWE) are all deserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs (A) is stored into the address advancement logic and the Address Register while being presented to the memory array. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within tCO if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always tri-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single Read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will tri-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The Write signals (GW, BWE, and BW[A:B]) and ADV inputs are ignored during this first cycle. ADSP-triggered Write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQ inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the Write operation is controlled by BWE and BW[A:B] Document #: 38-05675 Rev. *B signals. The CY7C1326H provides Byte Write capability that is described in the Write Cycle Descriptions table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BW[A:B]) input, will selectively write to only the desired bytes. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1326H is a common I/O device, the Output Enable (OE) must be deserted HIGH before presenting data to the DQ inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the Write inputs (GW, BWE, and BW[A:B]) are asserted active to conduct a Write to the desired byte(s). ADSC-triggered Write accesses require a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The ADV input is ignored during this cycle. If a global Write is conducted, the data presented to DQ is written into the corresponding address location in the memory core. If a Byte Write is conducted, only the selected bytes are written. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1326H is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1326H provides a two-bit wraparound counter, fed by A[1:0], that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both Read and Write burst operations are supported. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Page 4 of 15 [+] Feedback CY7C1326H Interleaved Burst Address Table (MODE = Floating or VDD) Linear Burst Address Table (MODE = GND) First Address A[1:0] Second Address A[1:0] Third Address A[1:0] Fourth Address A[1:0] 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 First Address A[1:0] Second Address A[1:0] Third Address A[1:0] Fourth Address A[1:0] 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min. Max. Unit IDDZZ Sleep mode standby current ZZ > VDD – 0.2V 40 mA tZZS Device operation to ZZ ZZ > VDD – 0.2V 2tCYC ns tZZREC ZZ recovery time ZZ < 0.2V tZZI ZZ Active to sleep current This parameter is sampled tRZZI ZZ Inactive to exit sleep current This parameter is sampled Document #: 38-05675 Rev. *B 2tCYC ns 2tCYC 0 ns ns Page 5 of 15 [+] Feedback CY7C1326H Truth Table[2, 3, 4, 5, 6, 7] Next Cycle Unselected Add. Used None ZZ L CE1 H CE2 X CE3 X ADSP X ADSC L ADV X OE X DQ Tri-State Write X Unselected None L L X H L X X X Tri-State X Unselected None L L L X L X X X Tri-State X Unselected None L L X H H L X X Tri-State X Unselected None L L L X H L X X Tri-State X Begin Read External L L H L L X X X Tri-State X Begin Read External L L H L H L X X Tri-State Read Continue Read Next L X X X H H L H Tri-State Read Continue Read Next L X X X H H L L DQ Read Continue Read Next L H X X X H L H Tri-State Read Continue Read Next L H X X X H L L DQ Read Suspend Read Current L X X X H H H H Tri-State Read Suspend Read Current L X X X H H H L DQ Read Suspend Read Current L H X X X H H H Tri-State Read Suspend Read Current L H X X X H H L DQ Read Begin Write Current L X X X H H H X Tri-State Write Begin Write Current L H X X X H H X Tri-State Write Begin Write External L L H L H H X X Tri-State Write Continue Write Next L X X X H H H X Tri-State Write Continue Write Next L H X X X H H X Tri-State Write Suspend Write Current L X X X H H H X Tri-State Write Suspend Write Current L H X X X H H X Tri-State Write ZZ “Sleep” None H X X X X X X X Tri-State X Truth Table for Read/Write[2, 3] Read Function GW H BWE H BWB X BWA X Read H L H H Write Byte A – (DQA and DQPA) H L H L Write Byte B – (DQB and DQPB) H L L H Write Bytes B, A H L L L Write All Bytes H L L L Write All Bytes L X X X Notes: 2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. 3. WRITE = L when any one or more Byte Write Enable signals (BWA, BWB) and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals (BWA, BWB), BWE, GW = H. 4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 5. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2. 6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: B]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to Tri-State. OE is a don't care for the remainder of the Write cycle 7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are Tri-State when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document #: 38-05675 Rev. *B Page 6 of 15 [+] Feedback CY7C1326H Maximum Ratings DC Input Voltage ................................... –0.5V to VDD + 0.5V (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current.................................................... > 200 mA Operating Range Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD DC Voltage Applied to Outputs in Tri-State........................................... –0.5V to VDDQ + 0.5V Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VDD 3.3V –5%/+10% VDDQ 2.5V –5% to VDD Electrical Characteristics Over the Operating Range[8, 9] Parameter Description VDD Power Supply Voltage VDDQ I/O Supply Voltage VOH VOL VIH VIL IX Output HIGH Voltage Output LOW Voltage Input HIGH Voltage[8] Input LOW Voltage[8] Input Leakage Current except ZZ and MODE Test Conditions Min. Max. Unit 3.135 3.6 V V for 3.3V I/O 3.135 VDD for 2.5V I/O 2.375 2.625 for 3.3V I/O, IOH = –4.0 mA 2.4 for 2.5V I/O, IOH = –1.0 mA 2.0 for 3.3V I/O, IOL = 8.0 mA 0.4 for 2.5V I/O, IOL = 1.0 mA 0.4 V for 3.3V I/O 2.0 VDD + 0.3V V for 2.5V I/O 1.7 VDD + 0.3V V for 3.3V I/O –0.3 0.8 V for 2.5V I/O –0.3 0.7 V –5 5 µA GND ≤ VI ≤ VDDQ Input Current of MODE Input = VSS µA –30 Input = VDD Input Current of ZZ V 5 Input = VSS µA –5 Input = VDD µA 30 µA IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled 5 µA IDD VDD Operating Supply Current VDD = Max., IOUT = 0 mA, 6-ns cycle, 166 MHz f = fMAX = 1/tCYC 7.5-ns cycle, 133 MHz 240 mA 225 mA ISB1 Automatic CS Power-down Current—TTL Inputs VDD = Max, Device 6-ns cycle, 166 MHz Deselected, VIN ≥ VIH or 7.5-ns cycle, 133 MHz VIN ≤ VIL, f = fMAX = 1/tCYC 100 mA 90 mA –5 ISB2 Automatic CS VDD = Max, Device All speeds Power-down Deselected, VIN ≤ 0.3V or Current—CMOS Inputs VIN > VDDQ – 0.3V, f = 0 40 mA ISB3 Automatic CS VDD = Max, Device 6-ns cycle, 166 MHz Power-down Deselected, or VIN ≤ 0.3V 7.5-ns cycle, 133 MHz Current—CMOS Inputs or VIN > VDDQ – 0.3V f = fMAX = 1/tCYC 85 mA 75 mA Automatic CS Power-down Current—TTL Inputs 45 mA ISB4 VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL, f = 0 All speeds Notes: 8. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2). 9. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05675 Rev. *B Page 7 of 15 [+] Feedback CY7C1326H Capacitance[10] Parameter Description Test Conditions CIN Input Capacitance CCLK Clock Input Capacitance CI/O Input/Output Capacitance 100 TQFP Package Unit 5 pF 5 pF 5 pF 100 TQFP Package Unit 30.32 °C/W 6.85 °C/W TA = 25°C, f = 1 MHz, VDD = 3.3V. VDDQ = 2.5V Thermal Resistance[10] Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 AC Test Loads and Waveforms 3.3V I/O Test Load R = 317Ω 3.3V OUTPUT ALL INPUT PULSES VDD OUTPUT RL = 50Ω Z0 = 50Ω 10% GND 5 pF R = 351Ω VL = 1.5V (a) INCLUDING JIG AND SCOPE 2.5V I/O Test Load (b) (c) 10% (a) 90% 10% 90% GND 5 pF VT = 1.25V ALL INPUT PULSES VDDQ OUTPUT RL = 50Ω Z0 = 50Ω ≤ 1 ns ≤ 1 ns R = 1667Ω 2.5V OUTPUT 90% 10% 90% R =1538Ω INCLUDING JIG AND SCOPE (b) ≤ 1 ns ≤ 1 ns (c) Notes: 10. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05675 Rev. *B Page 8 of 15 [+] Feedback CY7C1326H Switching Characteristics Over the Operating Range [11, 12] 166 MHz Parameter tPOWER Description Min. [13] VDD(Typical) to the First Access Max 133 MHz Min. Max Unit 1 1 ms Clock tCYC Clock Cycle Time 6.0 7.5 ns tCH Clock HIGH 2.5 3.0 ns tCL Clock LOW 2.5 3.0 ns Output Times tCO Data Output Valid after CLK Rise tDOH Data Output Hold after CLK Rise 1.5 1.5 ns tCLZ Clock to Low-Z[14, 15, 16] 0 0 ns tCHZ Clock to High-Z[14, 15, 16] tOEV OE LOW to Output Valid tOELZ OE LOW to Output Low-Z[14, 15, 16] tOEHZ OE HIGH to Output 3.5 4.0 3.5 3.5 0 High-Z[14, 15, 16] 4.0 ns 4.5 ns 0 3.5 ns ns 4.0 ns Set-up Times tAS Address Set-up before CLK Rise 1.5 1.5 ns tADS ADSC, ADSP Set-up before CLK Rise 1.5 1.5 ns tADVS ADV Set-up before CLK Rise 1.5 1.5 ns tWES GW, BWE, BW[A:B] Set-up before CLK Rise 1.5 1.5 ns tDS Data Input Set-up before CLK Rise 1.5 1.5 ns tCES Chip Enable Set-Up before CLK Rise 1.5 1.5 ns tAH Address Hold after CLK Rise 0.5 0.5 ns tADH ADSP, ADSC Hold after CLK Rise 0.5 0.5 ns tADVH ADV Hold after CLK Rise 0.5 0.5 ns tWEH GW, BWE, BW[A:B] Hold after CLK Rise 0.5 0.5 ns tDH Data Input Hold after CLK Rise 0.5 0.5 ns tCEH Chip Enable Hold after CLK Rise 0.5 0.5 ns Hold Times Notes: 11. Timing reference level is 1.5V when VDDQ = 3.3V and 1.25V when VDDQ = 2.5V. 12. Test conditions shown in (a) of AC Test Loads unless otherwise noted. 13. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated. 14. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 16. This parameter is sampled and not 100% tested. Document #: 38-05675 Rev. *B Page 9 of 15 [+] Feedback CY7C1326H Switching Waveforms Read Cycle Timing[17] t CYC CLK t CH t ADS t CL t ADH ADSP tADS tADH ADSC tAS ADDRESS tAH A1 A2 tWES A3 Burst continued with new base address tWEH GW, BWE, BW[A:B] Deselect cycle tCES tCEH CE tADVS tADVH ADV ADV suspends burst. OE t OEHZ t CLZ Data Out (Q) High-Z Q(A1) tOEV tCO t OELZ tDOH Q(A2) t CHZ Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) t CO Single READ BURST READ DON’T CARE Burst wraps around to its initial state UNDEFINED Note: 17. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. Document #: 38-05675 Rev. *B Page 10 of 15 [+] Feedback CY7C1326H Switching Waveforms (continued) Write Cycle Timing[17, 18] t CYC CLK tCH tADS tCL tADH ADSP tADS ADSC extends burst tADH tADS tADH ADSC tAS tAH A1 ADDRESS A2 A3 Byte write signals are ignored for first cycle when ADSP initiates burst tWES tWEH BWE, BW[A :B] tWES tWEH GW tCES tCEH CE t t ADVS ADVH ADV ADV suspends burst OE tDS Data In (D) High-Z t OEHZ tDH D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Data Out (Q) BURST READ Single WRITE BURST WRITE DON’T CARE Extended BURST WRITE UNDEFINED Note: 18. Full width Write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A : B] LOW. Document #: 38-05675 Rev. *B Page 11 of 15 [+] Feedback CY7C1326H Switching Waveforms (continued) Read/Write Cycle Timing[17, 19, 20] tCYC CLK tCL tCH tADS tADH tAS tAH ADSP ADSC ADDRESS A1 A2 A3 A4 A5 A6 D(A5) D(A6) tWES tWEH BWE, BW[A:B] tCES tCEH CE ADV OE tDS tCO Data In (D) tOELZ High-Z tCLZ Data Out (Q) tDH High-Z Q(A1) Back-to-Back READs tOEHZ D(A3) Q(A2) Q(A4) Single WRITE Q(A4+1) Q(A4+2) BURST READ DON’T CARE Q(A4+3) Back-to-Back WRITEs UNDEFINED Notes: 19. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP, ADSC, or ADV cycle is performed. 20. GW is HIGH. Document #: 38-05675 Rev. *B Page 12 of 15 [+] Feedback CY7C1326H Switching Waveforms (continued) ZZ Mode Timing[21, 22] CLK t ZZ I t t ZZ ZZREC ZZI SUPPLY I t RZZI DDZZ ALL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes: 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 22. I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05675 Rev. *B Page 13 of 15 [+] Feedback CY7C1326H Ordering Information “Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered”. Speed (MHz) Package Diagram Ordering Code 166 133 Operating Range Package Type CY7C1326H-166AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1326H-166AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial CY7C1326H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1326H-133AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial Package Diagram 100-pin TQFP (14 x 20 x 1.4 mm) (51-85050) 16.00±0.20 1.40±0.05 14.00±0.10 81 100 80 1 20.00±0.10 22.00±0.20 0.30±0.08 0.65 TYP. 30 12°±1° (8X) SEE DETAIL A 51 31 50 0.20 MAX. 0.10 1.60 MAX. R 0.08 MIN. 0.20 MAX. 0° MIN. SEATING PLANE STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 NOTE: 1. JEDEC STD REF MS-026 GAUGE PLANE 0°-7° R 0.08 MIN. 0.20 MAX. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.60±0.15 0.20 MIN. 51-85050-*B 1.00 REF. DETAIL A i486 is a trademark, and Intel and Pentium are registered trademarks, of Intel Corporation. PowerPC is a registered trademark of IBM Corporation. All product and company names mentioned in this document may be trademarks of their respective holders. Document #: 38-05675 Rev. *B Page 14 of 15 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY7C1326H Document History Page Document Title: CY7C1326H 2-Mbit (128K x 18) Pipelined Sync SRAM Document Number: 38-05675 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 347357 See ECN PCI New Data Sheet *A 424820 See ECN RXU Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed Three-State to Tri-State. Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the Electrical Characteristics Table. Modified test condition from VIH < VDD to VIH < VDD Replaced Package Name column with Package Diagram in the Ordering Information table. Replaced Package Diagram of 51-85050 from *A to *B *B 459347 See ECN NXR Converted from Preliminary to Final Included 2.5V I/O option Updated the Ordering Information table. Document #: 38-05675 Rev. *B Page 15 of 15 [+] Feedback