VS-63CTQ100GPbF, VS-63CTQ100G-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base common cathode 2 • • • • TO-220AB • 3 2 Common Anode cathode 1 Anode • • • PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 30 A VR 100 V VF at IF 0.69 V IRM max. 20 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 11.25 mJ 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 60 A 100 V Rectangular waveform (per device) VRRM IFRM TC = 139 °C (per leg) IFSM tp = 5 μs sine VF 30 Apk, TJ = 125 °C TJ Range 60 A 1500 0.69 V - 65 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-63CTQ100GPbF VS-63CTQ100G-N3 UNITS 100 100 V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per leg per device Peak repetitive forward current per leg TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 139 °C, rectangular waveform IFRM Rated VR, square wave, 20 kHz, TC = 140 °C 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 30 60 60 A 1500 Maximum peak one cycle non-repetitive surge current per leg IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.75 A, L = 40 mH 11.25 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.75 A Revision: 29-Aug-11 10 ms sine or 6 ms rect. pulse 300 Document Number: 94508 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-63CTQ100GPbF, VS-63CTQ100G-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 30 A VFM (1) Maximum forward voltage drop TJ = 25 °C 60 A 30 A TJ = 125 °C 60 A TJ = 25 °C VR = Rated VR Maximum instantaneous reverse current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured from top of terminal to mounting plane Typical series inductance Maximum voltage rate of change dV/dt TJ = 125 °C Rated VR TYP. MAX. 0.78 0.82 0.94 1.0 0.64 0.69 0.78 0.83 0.02 0.3 11 20 UNITS V mA 1100 pF 8.0 nH 10 000 V/µs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS - 65 to 175 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg RthJC DC operation 1.2 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W Approximate weight Mounting torque Marking device Revision: 29-Aug-11 minimum maximum Non-lubricated threads Case style TO-220AB 2 g 0.07 oz. 6 (5) kgf cm (lbf in) 12 (10) 63CTQ100G Document Number: 94508 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-63CTQ100GPbF, VS-63CTQ100G-N3 www.vishay.com Vishay Semiconductors 1000 150˚C 125˚C R 10 100˚C Reverse Current - I (A) F 1 75˚C 0.1 50˚C 25˚C 0.01 0.001 100 0.0001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 (pF) Tj = 25˚C T 10 Junction Capacitance - C Instantaneous Forward Current - I Tj = 175˚C 100 (mA) 1000 Tj = 175˚C Tj = 125˚C Tj = 25˚C 1 0 0.2 0.4 0.6 0.8 1 100 1.2 1.4 1.6 1.8 0 Forward Voltage Drop - VFM (V) 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 0.01 t2 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Aug-11 Document Number: 94508 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-63CTQ100GPbF, VS-63CTQ100G-N3 www.vishay.com Vishay Semiconductors 30 170 Average Power Loss (Watts) Allowable Case Temperature (°C) 180 DC 160 150 140 130 120 Square wave (D = 0.50) 80% Rated Vr applied 110 100 see note (1) 90 0 F(AV) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 10 5 0 5 10 15 20 25 30 35 40 45 Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics 10000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge FSM (A) DC RMS Limit 15 (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Non-Repetitive Surge Current - I 20 0 5 10 15 20 25 30 35 40 45 Average Forward Current - I 25 1000 100 10 100 1000 Square Wave Pulse Duration - t 10000 (microsec) p Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Aug-11 Document Number: 94508 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-63CTQ100GPbF, VS-63CTQ100G-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 63 C T Q 100 G PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (60 A) 3 - C = Common cathode 4 - T = TO-220 5 - Q = Schottky “Q” series 6 - Voltage rating (100 = 100 V) 7 - G = Schottky generation 8 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-63CTQ100GPbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-63CTQ100G-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 29-Aug-11 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 Document Number: 94508 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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