PH1214-55EL Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25°C Symbol Rating Units Collector-Emitter Voltage Parameter VCES 58 V Emitter-Base Voltage VEBO 3.0 V IC 7.0 A Collector Current (Peak) Power Dissipation @ +25°C PTOT 220 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Collector-Emitter Breakdown Voltage IC = 120mA Symbol Min Max Units BVCES 58 - V ICES - 6.0 mA Collector-Emitter Leakage Current VCE = 28V Thermal Resistance Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.8 °C/W Output Power Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz POUT 55 - W Power Gain Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz GP 6.6 - dB Collector Efficiency Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz ηC 50 - % Input Return Loss Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz RL - -10 dB Load Mismatch Tolerance Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 - 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. PH1214-55EL Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty M/A-COM Products Released, 30 May 07 RF Test Fixture Impedance F (GHz) ZIF (Ω) ZOF (Ω) 1.2 5.8 + j1.8 5.5 - j3.4 1.3 2.4 + j1.3 3.3 - j2.3 1.4 2.4 + j0.6 2.0 - j2.3 Test Fixture Circuit Dimensions Test Fixture Assembly 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.