New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection 560 V Qg (Typ.) 3.5 nC APPLICATIONS PowerPAK SC-70-6 Dual • Load Switch for Portable Applications • High Frequency DC/DC Converter D2 D1 1 S1 2 G1 3 D2 D1 D1 6 Marking Code D2 G2 5 2.05 mm G2 G1 CCX 4 S2 2.05 mm Part # code XXX Lot Traceability and Date code S1 Ordering Information: SiA906EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current ID IDM IS PD TJ, Tstg Limit 20 ± 12 4.5a 4.5a 4.5a, b, c 4.1b, c 15 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t≤5s RthJA 52 65 Maximum Junction-to-Ambientb, f °C/W RthJC 12.5 16 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 69067 S-83087-Rev. A, 29-Dec-08 www.vishay.com 1 New Product SiA906EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 23 mV/°C - 3.3 0.6 1.4 VDS = 20 V, VGS = 0 V -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = 4.5 V V ±8 10 µA A VGS = 4.5 V, ID = 3.9 A 0.037 0.046 VGS = 2.5 V, ID = 3.3 A 0.051 0.063 VDS = 10 V, ID = 3.9 A 14 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 350 VDS = 10 V, VGS = 0 V, f = 1 MHz 63 VDS = 10 V, VGS = 10 V, ID = 5.1 A 7.5 12 3.5 5.5 37 VDS = 10 V, VGS = 4.5 V, ID = 5.1 A tr tf VDD = 10 V, RL = 2.4 Ω ID ≅ 4.1 A, VGEN = 4.5 V, Rg = 1 Ω td(on) tr td(off) tf 0.95 nC 0.75 f = 1 MHz td(on) td(off) pF VDD = 10 V, RL = 2.4 Ω ID ≅ 4.1 A, VGEN = 10 V, Rg = 1 Ω Ω 3.5 10 15 12 20 18 30 12 20 5 10 12 20 15 25 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4.5 15 IS = 4.1 A, VGS = 0 V IF = 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 30 ns 8 20 nC 8 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69067 S-83087-Rev. A, 29-Dec-08 New Product SiA906EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10-2 3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10-3 2 IGSS at 25 °C 1 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 10-9 10-10 0 0 3 6 9 12 15 0 18 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 5 VGS = 5 thru 3 V VGS = 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 2 V 3 TC = - 55 °C 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 500 0.12 Ciss 400 0.09 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS = 2.5 V 0.06 VGS = 4.5 V 300 200 Coss 0.03 100 Crss 0 0.00 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Document Number: 69067 S-83087-Rev. A, 29-Dec-08 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 New Product SiA906EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 1.7 ID = 3.9 A 1.5 8 VDS = 10 V 6 VDS = 16 V 4 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 5.1 A VGS = 4.5 V, 2.5 V 1.1 0.9 2 0.7 0 0 2 4 6 0.5 - 50 8 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.20 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 A 10 TJ = 150 °C TJ = 25 °C 1 0.16 0.12 0.08 TJ = 125 °C 0.04 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.3 20 1.2 Power (W) VGS(th) (V) 15 ID = 250 µA 1.1 1.0 0.9 0.8 10 5 0.7 0.6 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Document Number: 69067 S-83087-Rev. A, 29-Dec-08 New Product SiA906EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µA 1 1 ms 10 ms 100 ms 10 s, 1 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 12 Power Dissipation (W) I D - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69067 S-83087-Rev. A, 29-Dec-08 www.vishay.com 5 New Product SiA906EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69067. www.vishay.com 6 Document Number: 69067 S-83087-Rev. A, 29-Dec-08 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm/(Inches) Return to Index www.vishay.com 12 Document Number: 70487 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1