SENSITRON SHD230302

SENSITRON
SEMICONDUCTOR
SHD230302
TECHNICAL DATA
DATA SHEET 602, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.18 Ohm, 7.4A MOSFET
œ Fast Switching
œ Low RDS (on)
œ Equivalent to IRFE130
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
@ TC = 25•C
ON-STATE DRAIN CURRENT
@ TC = 100•C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ TC = 25•C
THERMAL RESISTANCE, JUNCTION TO CASE
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 5.4A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250mA
FORWARD TRANSCONDUCTANCE
VDS = 15V, IDS = 6.8A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Max. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
TURN ON DELAY TIME
VDD = 50V,
RISE TIME
ID = 10.8A,
TURN OFF DELAY TIME
RG = 7.5W
FALL TIME
TOTAL GATE CHARGE
ID = 10.8A,
GATE TO SOURCE CHARGE
VGS = 10V,
GATE TO DRAIN CHARGE
VDS =0.5xMax. Rating
DIODE FORWARD VOLTAGE
TC = 25•C, IS = 10.8A,
VGS = 0V
REVERSE RECOVERY CHARGE
TJ = 25•C,
di/dt ˆ 100A/msec, VDD ˆ 50V
REVERSE RECOVERY TIME
TJ = 25•C,
IF = 10.8A,
di/dt ˆ 100A/msec, VDD ˆ 50V
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
SYMBOL
VGS
ID
ID
TOP/TSTG
PD
RthJC
MIN.
-55
-
TYP.
-
MAX.
–20
10.8
6.8
+150
42
3.0
UNITS
Volts
Amps
Amps
•C
Watts
•C/W
BVDSS
100
-
-
Volts
RDS(ON)
-
-
0.18
W
VGS(th)
gfs
2.0
3.0
-
4.0
-
Volts
S(1/W)
-
-
mA
IGSS
-
-
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
VSD
-
-
12.8
1.0
3.8
-
-
25
250
100
-100
30
75
40
45
28.5
6.3
16.6
1.5
nC
nC
nC
Volts
QRR
-
-
3.0
mC
trr
-
-
300
Ciss
Coss
Crss
-
650
240
44
-
IDSS
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-mail Address - [email protected]
nA
nsec
nsec
pF
SHD230302
SENSITRON
DATA SHEET 602
REVISION -
MECHANICAL DIMENSIONS: in Inches / m
.011 (.279
.009 .228)
.040(1.02) x 45 o
Chamfer 3 Plcs
.458 (11.7
.442 11.2)
.050(1.27)Typ
.030(.762)Typ
.030Typ
(.762)
.310 (7.88
.290 7.36)
.040(1.02) x 45 o
Pin 26 Pin 1 Chamfer 3 Plcs
.305 (7.75
.295 7.49)
.035(.889)Typ
.010(.254)Typ
.095(2.42)Max
LCC-28T
PINOUT TABLE
Device Type
Single MOSFET in a
LCC-28T Package
PIN(S) 1 & 15-28
SOURCE
PINS 5-11
DRAIN
PINS 2,3,13,14
GATE
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-mail Address - [email protected]
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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Sensitron Semiconductor.
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]