PANJIT RB411D

RB411D
Schottky Barrier Diode
VOLTAGE
40Volts
POWER
500mA
FEATURES
High Reliability
Low Reverse Current
Ultra High-speed Switching
MECHANICAL DATA
Case : SOT-23, Plastic
Terminals : Solderable per MIL-STD-202G,
Method 208
Approx. Weight : 0.08 gram
Marking : 11D
ABSOLUTE RATINGS (TA=25
)
Parameter
Symbol
Value
Units
VRM
40
V
IO
500
mA
IFSM
3
A
Junction Temperature
TJ
125
Storage Temperature
TSTG
-40 to +125
Reverse Voltage
Average Rectified Forward Current
Forward Current Surge Peak (t=8.3ms)
8/02/2006
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RB411D
ELECTRICAL CHARACTERISTICS (TA=25
Parameter
Forward Voltage
8/02/2006
Symbol
)
Conditions
Min.
Typ.
Max.
Units
-
-
0.5
V
IF= 500mA
-
-
0.3
V
IF= 10mA
VF
Reverse Current
IR
-
-
30
uA
VR= 10V
Junction Capacitance
CJ
-
16
-
pF
VR= 10V, f=1MHz
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RB411D
ELECTRICAL CHARACTERISTICS CURVE
Fig. 1. Typical Forward Voltage
Fig. 2. Typical Reverse Current
Fig. 3. Typical Operating Temperature Derating
8/02/2006
Page 3
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RB411D
MOUNTING PAD LAYOUT
LEGAL STATEMENT
8/02/2006
Page 4
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