BYG22A thru BYG22D www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V to 200 V IFSM 35 A IR 1.0 μA VF 1.1 V trr 25 ns ER 20 mJ TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG22A BYG22B BYG22D BYG22A BYG22B BYG22D 50 100 200 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 35 A ER 20 mJ TJ, TSTG - 55 to + 150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range Revision: 21-Dec-11 V Document Number: 88959 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A thru BYG22D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Maximum instantaneous forward voltage IF = 2.0 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 25 °C TJ = 25 °C TJ = 100 °C SYMBOL BYG22A BYG22B BYG22D UNIT 1.0 VF (1) V 1.1 1 IR µA 10 trr 25 ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance, junction to lead, TL = const. BYG22A BYG22B RJL 150 RJA (2) 125 (3) 100 RJA UNIT 25 (1) RJA Maximum thermal resistance, junction to ambient BYG22D °C/W °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG22A-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG22A-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG22AHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel PREFERRED P/N BYG22AHE3/TR3 (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 2.5 Average Forward Current (A) Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 VR = VRRM Half Sine-Wave 2.0 RθJA ≤ 25 K/W 1.5 RθJA ≤ 125 K/W 1.0 RθJA ≤ 150 K/W 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 Forward Voltage (V) Ambient Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Revision: 21-Dec-11 Document Number: 88959 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A thru BYG22D www.vishay.com Vishay General Semiconductor 140 100 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 10 120 TA = 100 °C 100 TA = 75 °C 80 TA = 50 °C 60 40 TA = 25 °C 20 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.6 0.8 1.0 Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Recovery Time vs. Forward Current 60 50 TA = 125 °C VR = VRRM Reverse Recovery Charge (nC) Reverse Power Dissipation (mW) 0.4 0.2 Junction Temperature (°C) 40 30 PR - Limit at 100 % VR 20 PR - Limit at 80 % VR 10 50 TA = 100 °C 40 TA = 75 °C 30 TA = 50 °C 20 TA = 25 °C 10 IR = 0.5 A, iR = 0.125 A 0 0 25 50 75 100 125 0.2 0 150 0.4 0.6 0.8 1.0 Forward Current (A) Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current Thermal Resistance for Pulse Cond. (K/W) Junction Temperature (°C) 70 f = 1 MHz Diode Capacitance (pF) 60 50 40 30 20 10 0 0.1 1 10 100 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Reverse Voltage (V) Pulse Length (s) Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 8 - Thermal Response Revision: 21-Dec-11 101 102 Document Number: 88959 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A thru BYG22D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Dec-11 Document Number: 88959 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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