DG469, DG470 Vishay Siliconix High Voltage, Single and Dual Supply SPDT Analog Switch with Enable Pin DESCRIPTION FEATURES The DG469, DG470 are high voltage SPDT switches, with a typical on resistance of 3.6 Ω and typical flatness of 0.4 Ω. The DG469, DG470 are identical, except the DG470 provides an enable input. When the enable input is activated, both sides of the switch are in a high impedance mode (Off), maintaining a "Safe State" at power up. This function can also be used as a quick "disconnect" in the event of a fault condition. For audio switching, the enable pin provides a mute function. These are high voltage switches that are fully specified with dual supplies at ± 4.5 V and ± 15 V and a single supply of 12 V over an operating temperature range from - 40 °C to + 125 °C. Fast switching speeds coupled with high signal bandwidth makes these parts suitable for video switching applications. All digital inputs have 0.8 V and 2.4 V logic thresholds ensuring low voltage TTL/CMOS compatibility. Each switch conducts equally well in both directions when on and can handle an input signal range that extends to the supply voltage rails. They exhibit breakbefore-make switching action to prevent momentary shorting when switching between channels. The DG469, DG470 are offered in a MSOP 8 and SOIC 8 package. • • • • • • • • • Low on resistance (3.6 Ω typical) On resistance flatness (0.4 Ω typical) 44 V supply maximum rating RoHS COMPLIANT ± 15 V analog signal range Fully specified at supply voltages of ± 4.5 V, 12 V and ± 15 V TTL/CMOS compatible Break before make switching guaranteed Total harmonic distortion 0.0145 % Compliant to RoHS Directive 2002/95/EC APPLICATIONS • • • • • • • • • • • Audio and video signal switching Precision automatic test equipment Precision data acquisition Relay replacement Communications systems Automotive applications Sample and hold systems Power routing applications Telecom signal switching Medical equipment Portable and battery power systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG470 DG469 MSOP 8 and SOIC 8 MSOP 8 and SOIC 8 COM 1 8 NC 2 7 V- GND 3 6 IN V+ 4 5 No Connect NO COM 1 8 NO NC 2 7 V- GND 3 6 IN V+ 4 5 EN Top View Top View TRUTH TABLE DG469 TRUTH TABLE DG470 Logic NC NO ENABLE Logic NC NO 0 ON OFF 0 0 ON OFF 1 OFF ON 0 1 OFF ON 1 X OFF OFF Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 www.vishay.com 1 DG469, DG470 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number 8-Pin MSOP DG469EQ-T1-E3 DG470EQ-T1-E3 8-Pin Narrow SOIC DG469EY-T1-E3 DG470EY-T1-E3 DG469, DG470 - 40 °C to 125 °Ca Notes: a. - 40 °C to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Limit V+ to VGND to VDigital Inputsa Unit 44 25 V (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first , VS, VD Continuous Current (NO, NC, or COM) 120 Current (Any terminal except NO, NC, or COM) 30 Peak Current, (Pulsed 1 ms, 10 % Duty Cycle) 200 Storage Temperature mA - 65 to 150 Power Dissipation (Package)b 8-Pin MSOPc 320 8-Pin Narrow SOICd 400 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 4.0 mW/°C above 70 °C. d. Derate 5.0 mW/°C above 70 °C. SPECIFICATIONS for Dual Supplies Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VIN = 2.4 V, 0.8 Va - 40 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Unit - 15 15 - 15 15 V Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Switch Off Leakage Current Channel On Leakage Current VANALOG Full RON IS = 50 mA, VD = - 10 V to + 10 V Room Full 3.6 6 8 6 7 ΔRON IS = 50 mA, VD = ± 10 V Room Full 0.12 0.4 0.9 0.4 0.5 RFLATNESS IS = 50 mA, VD = - 5 V, 0 V, + 5 V Room Full 0.4 0.5 0.9 0.5 0.8 Room Full ± 0.1 - 0.5 - 20 0.5 20 - 0.5 - 2.5 0.5 2.5 Room Full ± 0.1 - 0.5 - 20 0.5 20 - 0.5 - 2.5 0.5 2.5 IS(off) VD = ± 14 V, VS = ± 14 V ID(off) ID(on) VS = VD = ± 14 V Room Full ± 0.2 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.05 -1 1 -1 1 Input Current, VIN High IIH VIN Under Test = 2.4 V Full 0.05 -1 1 -1 1 Input Capacitancee CIN f = 1 MHz Room 3.7 Ω nA Digital Control www.vishay.com 2 µA pF Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 DG469, DG470 Vishay Siliconix SPECIFICATIONS for Dual Supplies Parameter Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VIN = 2.4 V, 0.8 Va Symbol - 40 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Room Full 129 166 200 166 185 Room Full 80 108 135 108 120 Room 15 Unit Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injectione Off Isolation e RL = 300 Ω, CL = 35 pF VS = ± 10 V tD VS = 10 V RL = 300 Ω, CL = 35 pF Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Capacitancee RL = 50 Ω, CL = 5 pF f = 1 MHz CD(off) 58 - 57 Room - 63 Room 37 pC dB Room 85 CD(on) Room 125 Power Supply Current I+ Room Full 3.0 Negative Supply Current I- Room Full - 0.4 - 0.5 - 4.5 - 0.5 - 4.5 Room Full - 3.0 -6 -7 -6 -7 Drain Off Channel On Capacitance e f = 1 MHz Room Room ns pF Power Supplies Ground Current V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V IGND 6 7 6 7 µA SPECIFICATIONS for Dual Supplies Test Conditions Unless Specified V+ = 4.5 V, V- = - 4.5 V VIN = 2.4 V, 0.8 Va Temp.b VANALOG Full RON IS = 50 mA, VD = - 2 V to + 2 V Room Full 8 11 16 11 15 ΔRON IS = 50 mA, VD = ± 2 V Room Full 0.6 0.7 0.9 0.7 0.8 Turn-On Timee tON Room Full 245 265 340 65 310 Turn-Off Timee tOFF RL = 300 Ω, CL = 35 pF VS = 2 V Room Full 145 163 200 163 185 Parameter Symbol - 45 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit - 4.5 4.5 - 4.5 4.5 V Analog Switch Analog Signal Rangee On-Resistancee On-Resistance Matche Ω Dynamic Characteristics Break-Before-Makee Time Delay tD VS = 2 V RL = 300 Ω, CL = 35 pF Room Full 15 Charge Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Full 58 Room Full 3.0 Room Full - 0.4 - 0.5 - 4.5 - 0.5 - 4.5 Room Full 3.0 -6 -7 -6 -7 ns pC Power Supplies Power Supply Currente I+ Negative Supply Currente I- Ground Currente Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 IGND VIN = 0 or 4.5 V 6 7 6 7 µA www.vishay.com 3 DG469, DG470 Vishay Siliconix SPECIFICATIONS for Unipolar Supplies Parameter Test Conditions Unless Specified V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Va Temp.b VANALOG Full RON IS = 25 mA, VD = 0 V to + 10 V Room Full 7.5 ΔRON IS = 25 mA, VD = + 10 V Room Full 0.4 0.45 0.9 0.45 0.5 RFLATNESS IS = 25 mA, VD = 0 V, + 5 V, + 10 V Room Full 2.5 2.6 2.9 2.6 2.8 Room Full 190 200 255 200 240 Room Full 100 110 135 110 120 Symbol - 40 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit 12 12 V 8.5 14 8.5 11.3 Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Ω Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF VS = 10 V Break-Before-Make Time Delay tD VS = 10 V RL = 300 Ω, CL = 35 pF Room 50 Charge Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 2.4 Room Full 3.0 Room Full - 0.4 - 0.5 - 4.5 - 0.5 - 4.5 Room Full - 3.0 -6 -7 -6 -7 ns pC Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND VIN = 0 or 5 V 6 7 6 7 µA Notes: a. VIN = input voltage to perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 DG469, DG470 Vishay Siliconix TYPICAL CHARACTERISTICS 14 12 TA = 25 °C IS = 50 mA 13 ± 4.5 +/4.5V R ON - On-Resistance (Ω) R ON - On-Resistance (Ω) 10 8 ± 10.0 V ± 10.0 V ± 12.0 V ± 13.5 V ± 15.0 V ± 20.0 V 6 4 TA = 25 °C IS = 25 mA + 7.0 V 12 + 9.0 V 11 + 10.8 V 10 + 12.0 V 9 8 + 20.0 V 7 + 24.0 V 6 + 36.0 V 5 4 3 2 - 20 2 - 15 - 10 -5 0 5 10 15 0 20 8 16 20 24 28 32 36 VCOM - Analog Voltage (V) On-Resistance vs. VD and Single Supply Voltage 12 7 10 + 125 °C R ON - On-Resistance (Ω) 6 + 125 °C 5 + 85 °C 4 + 25 °C 3 - 40 °C 2 - 55 °C V+ = + 15 V V- = - 15 V IS = 50 mA 1 0 - 15 8 + 85 °C 6 + 25 °C - 40 °C 4 - 55 °C 0 - 10 -5 0 5 10 V+ = + 12 V V- = 0 V IS = 25 mA 2 15 0 2 4 6 8 10 12 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) On-Resistance vs. VD and Temperature On-Resistance vs. VD and Temperature 100 000 100 000 V+ = + 15 V V- = - 15 V V+ = + 12 V V- = - 12 V ID(on) ID(off) 1000 IS(off) 100 10 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Leakage Current vs. Temperature Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 ID(on) 10 000 Leakage Current (pA) 10 000 Leakage Current (pA) 12 On-Resistance vs. VD and Dual Supply Voltage 8 R ON - On-Resistance (Ω) 4 VCOM - Analog Voltage (V) ID(off) 1000 IS(off) 100 10 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 5 DG469, DG470 Vishay Siliconix TYPICAL CHARACTERISTICS 300 200 CL = 1 nF T = 25 °C 150 200 50 tON/tOFF (s) Q - Charge Injection (pC) 250 V+ = + 12 V V- = 0 V 100 0 - 50 t ON 150 100 - 100 - 150 - 200 t OFF 50 0 1 2 3 4 5 6 7 8 9 10 11 0 12 4 8 12 VCOM - Analog Voltage (V) 20 24 28 32 36 Supply Voltage (V) Switching Time vs. Single Supply Voltage Charge Injection vs. Analog Voltage 350 300 CL = 1 nF 300 250 250 V+ = + 5 V V- = - 15 V 200 150 t ON , V+ = 7 V 200 100 tON/tOFF (ns) Q - Charge Injection (pC) 16 50 0 - 50 - 100 t ON , V+ = 12 V 150 100 - 150 t OFF , V+ = 7 V - 200 - 250 50 t OFF , V+ = 12 V - 300 - 350 - 15 - 10 -5 0 5 VCOM - Analog Voltage (V) 10 0 - 55 15 - 40 25 85 125 Temperature (°C) Switching Time vs. Temperature and Single Supply Voltage Charge Injection vs. Analog Voltage 350 300 T = 25 °C 300 250 250 200 tON/tOFF (s) tON/tOFF (ns) t ON, V ± = ± 4.5 V 200 150 t ON, V ± = ± 15 V t ON 150 100 100 50 t OFF, V ± = ± 4.5 V t OFF, V ± = ± 15 V 0 - 55 0 - 40 25 Temperature (°C) 85 Switching Time vs. Temperature and Dual Supply Voltage www.vishay.com 6 t OFF 50 125 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Switching Time vs. Dual Supply Voltage Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 DG469, DG470 Vishay Siliconix TYPICAL CHARACTERISTICS 1.8 0 BW - 10 1.6 - 30 - 40 dB OIRR - 50 - 60 1.4 VT - Switching Threshold (V) - 20 XTALK - 70 1.2 1.0 0.8 0.6 0.4 0.2 - 80 - 90 0 Hz 0 300 kHz 1 MHz 10 MHz 100 MHz 1 GHz 4 8 12 Frequency (Hz) 16 20 24 28 32 36 V+ - Supply Voltage (V) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Switching Threshold vs. Signal Supply Voltage 1.8 1 1.4 + 12 V 1.2 0.1 THD (%) VT - Switching Threshold (V) 1.6 1.0 0.8 ± 15 V 0.6 0.01 0.4 0.2 ± 10 V 0 4 6 8 10 12 14 16 18 20 0.001 10 100 1000 10 000 100 000 Frequency (Hz) V+ - Supply Voltage (V) Switching Threshold vs. Dual Supply Voltage DG469, DG470 Total Harmonic Distortion TEST CIRCUITS + 15 V 3V Logic Input tr < 5 ns tf < 5 ns 50 % V+ 10 V S 0V D IN GND tOFF VO RL 300 V- CL 35 pF Switch Input VS VO 90 % 90 % 0V tON - 15 V CL (includes fixture and stray capacitance) VO = VS RL Note: Logic input waveform is inverted for switches that have the opposite logic sense control. RL + rDS(on) Figure 1. Switching Time Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 www.vishay.com 7 DG469, DG470 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ VNO VNC VINL COM NO tr < 5 ns tf < 5 ns VINH VO NC RL 50 Ω IN VNC = VNO VO CL 35 pF Switch Output V- GND 90 % 0V tD tD - 15 V CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make ΔVO Switch under test NO NC VINH or VINL IN VINH VINL + 15 V IN Rg VO EN X V+ ON OFF VO EN Vg OFF NO or NC COM CL 1 nF 3V V- GND EN X OFF ON Q = ΔVO x CL OFF - 15 V Figure 3. Charge Injection + 15 V + 15 V C V+ S VS C VO D V+ Rg = 50 Ω S RL 50 Ω IN 0 V, 2.4 V Meter 0 V, 2.4 V GND V- C IN HP4192A Impedance Analyzer or Equivalent D - 15 V Off Isolation = 20 log GND V- C VO VS C = RF Bypass Figure 4. Off-Isolation - 15 V Figure 5. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71470. www.vishay.com 8 Document Number: 71470 S09-1053-Rev. D, 08-Jun-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1