MCL4148, MCL4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • • • • • Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD-323 / SOT-23 footprints Electrical data identical with the devices 1N4148 and 1N4448 respectively MicroMELF package AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition 9612315 Applications Mechanical Data • Extreme fast switches Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3 / 10 k per 13" reel (8 mm tape), 10 k/box TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks MCL4148 VRRM = 100 V, VF at IF 50 mA = 1 V MCL4148-TR3 or MCL4148-TR Tape and Reel MCL4448 VRRM = 100 V, VF at IF 100 mA = 1 V MCL4448-TR3 or MCL4448-TR Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 µs Repetitive peak forward current Forward continuous current Average forward current Power dissipation Document Number 85566 Rev. 2.0, 20-Aug-10 VR = 0 Symbol Value VRRM Unit 100 V VR 75 V IFSM 2 A IFRM 450 mA IF 200 mA IFAV 150 mA Ptot 500 mW For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 MCL4148, MCL4448 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Mounted on epoxy-glass hard tissue, Fig. 5, Junction to ambient air 35 µm copper clad, 0.9 mm2 copper area per electrode Symbol Value Unit RthJA 500 K/W Tj 175 °C Tstg - 65 to + 175 °C Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Min. IF = 5 mA MCL4448 VF 620 IF = 50 mA MCL4148 VF IF = 100 mA MCL4448 VF Forward voltage Reverse current Unit 720 mV 860 1000 mV 930 1000 mV IR 25 nA VR = 20 V, Tj = 150 °C IR 50 µA 5 µA VR = 75 V IR Breakdown voltage V(BR) Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD Reverse recovery time Max. VR = 20 V IR = 100 µA, tp/T = 0.01, tp = 0.3 ms Rectification efficiency Typ. 100 V 4 pF VHF = 2 V, f = 100 MHz ηr IF = IR =10 mA, iR = 1 mA trr 8 ns IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω trr 4 ns 45 % Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 1000 MCL 4448 I F - Forward Current (mA) I F - Forward Current (mA) MCL 4148 100 Scattering Limit 10 1 100 Scattering Limit 10 1 Tj = 25 ° C Tj = 25 °C 0.1 0.1 0 16641 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage www.vishay.com 2 0 16643 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage For technical questions within your region, please contact one of the following: Document Number 85566 [email protected], [email protected], [email protected] Rev. 2.0, 20-Aug-10 MCL4148, MCL4448 Vishay Semiconductors IR- Reverse Current (nA) 1000 Tj = 25 °C 100 Scattering Limit 10 1 1 10 100 VR- Reverse Voltage (V) 94 9098 Figure 3. Reverse Current vs. Reverse Voltage CD - Diode Capacitance (pF) 3.0 f = 1 MHz Tj = 25 °C 2.5 2.0 1.5 1.0 0.5 0 0.1 1 100 10 VR - Reverse Voltage (V) 94 9099 Figure 4. Diode Capacitance vs. Reverse Voltage 0.71 1.3 1.27 9.9 0.152 10 25 0.355 2.5 95 10329 24 Figure 5. Board for RthJA definition (in mm) Document Number 85566 Rev. 2.0, 20-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 MCL4148, MCL4448 Vishay Semiconductors Package Dimensions in millimeter (inches): MicroMELF 0.6 (0.024) * 1.1 (0.043) 1.2 (0.047) < 1. surface plan gl 1 (0.039) 35 ( as 0.0 s 53 ) surface plan Cathode indification 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass 2 (0.079) 1.8 (0.071) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Wave soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 0.8 (0.031) Reflow soldering 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85566 [email protected], [email protected], [email protected] Rev. 2.0, 20-Aug-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000