RFM07U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM07U7X VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • Wide Band matching: f=450 to 530MHz • Drain efficiency: ηD = 68% (typ.) • Output power: PO = 8.2 W (typ.) • Gain: GP = 12.5 dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 16 V Gate-source voltage VGSS 3 V ID 3 A Drain current PW-X Power dissipation PD* 20 W JEDEC Channel temperature Tch 150 °C JEITA Storage temperature range Tstg −45 to 150 °C TOSHIBA 2-5N1A Weight: 0.08 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) Marking 2 UH 1 Type name F 3 ** Dot Lot No. 1. Gate 2. Source (heat sink) 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. 1 2012-05-25 RFM07U7X Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = 7.2 V, VGS = 0 V − − 10 μA Gate-source leakage current IGSS VGS = 3 V − − 5 μA Threshold voltage Vth VDS = 7.2 V, ID = 2 mA 0.4 0.9 1.4 V Output power PO 8.2 − W ηD 58 68 − % Power gain GP VDS = 7.2 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 0.5 W, ZG = ZL = 50 Ω 7.0 Drain efficiency 11.5 12.5 − dB VDS = 10 V, PO = 7 W (Pi = adjust), Iidle = 500 mA (VGS = adjust), f = 520 MHz, VSWR LOAD 20:1 all phase − Load mismatch No degradation − Note 1: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 450 to 530 MHz, VDS = 7.2 V, Iidle = 500 mA, Pi = 0.5 W) C2 L2 C9 C8 Pi ZG = 50 Ω PO R1 C1 C3 C5 C4 L1 C7 C11 C10 VGS C1: 10 pF C2: 2200 pF C3: 39 pF C4: 20 pF C5: 20 pF C6: 10 pF C7: 10 pF C8: 2200 pF C9: 2200 pF C10: 47 μF C11: 47 μF C6 ZL = 50 Ω VDS L1: φ0.6 mm enamel wire, 5.0ID, 10T L2: φ0.5 mm enamel wire, 2.5ID, 1.5T 2 R1: 1.5 kΩ 2012-05-25 RFM07U7X Vgs - Iidle f - Po, nD Vds=7.2V Pi=0.5W Iidle=500mA 8 80 7 70 6 60 5 50 4 40 3 30 2 20 Po 1.5 1.4 460 470 480 490 500 510 520 530 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 10 0.2 0.1 0 450 1.3 0.3 nD 1 0 440 Vds=7.2V 1.6 90 Iidle(A) OUTPUT POWER Po(W) 9 1.7 100 DRAIN EFFICIENCY nD(%) 10 0 540 0 FREQUENCY f (MHz) 0.2 0.4 0.6 0.8 Pi - Po 14 1.2 1.4 1.6 1.8 2 Pi - nD 80 f =520MHz Iidle=500mA 13 1 GATE VOLTAGE Vgs(V) f =520MHz Iidle=500mA 70 12 DRAIN EFFICIENCY nD(%) OUTPUT POWER Po(W) 11 10 9 8 7 6 5 4 3 60 50 40 30 20 Vds=9.6V 2 Vds=9.6V 10 Vds=7.2V 1 Vds=7.2V Vds=6.0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Vds=6.0V 0 1.0 0.0 0.1 0.2 INPUT POWER Pi(W) 0.3 9 0.5 0.6 0.7 0.8 0.9 1.0 INPUT POWER Pi(W) Pi - nD Pi - Po 10 0.4 70 f =520MHz Vds=7.2V f =520MHz Vds=7.2V 60 DRAIN EFFICIENCY nD(%) OUTPUT POWER Po(W) 8 7 6 5 4 3 50 40 30 20 Iidle=700mA 2 Iidle=700mA Iidle=500mA 1 Iidle=500mA 10 Iidle=300mA Iidle=300mA 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 INPUT POWER Pi(W) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INPUT POWER Pi(W) 3 2012-05-25 RFM07U7X Coss -Vds Ciss -Vds 100 57 f =1MHz f =1MHz 90 55 80 70 Coss (pF) Ciss (pF) 53 51 49 60 50 40 30 20 47 10 0 45 0 2 4 6 8 10 12 14 0 16 2 4 6 8 10 12 14 16 Vds(V) Vds(V) Crss -Vds 9 f =1MHz 8 7 Crss (pF) 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Vds(V) Note 2:These are only typical curves and devices are not necessarily guaranteed at these curves. 4 2012-05-25 RFM07U7X RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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