TIP142T TIP147T Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode TAB Application ■ Linear and switching industrial equipment 3 1 Description TO-220 The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Figure 1. Internal schematic diagrams R1 typ. = 5 kΩ R1 typ. = 8 kΩ R2 typ. = 60 Ω R2 typ. = 100 Ω Device summary Part number Marking Polarity TIP142T TIP142T NPN TIP147T TIP147T PNP May 2010 2 Doc ID 4135 Rev 5 Package Packaging TO-220 Tube 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 10 A Collector peak current 20 A Base current 0.5 A PTOT Total dissipation at Tcase = 25 °C 90 W TSTG Storage temperature -65 to 150 °C 150 °C ICM IB TJ Max. operating junction temperature For PNP type voltage and current are negative. Table 3. Symbol RthJC 2/8 Parameter VCBO IC Note: TIP142T, TIP147T Thermal data Parameter Thermal resistance junction-case Doc ID 4135 Rev 5 __max Value Unit 1.4 °C/W TIP142T, TIP147T 2 Electrical characteristics Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 100 V 1 mA ICEO Collector cut-off current (IB = 0) VCE = 50 V 2 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 2 mA Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) IC = 30 mA 100 V VCE(sat)(1) Collector-emitter saturation voltage IC = 5 A IC = 10 A IB = 10 mA IB = 40 mA 2 3 V V VBE(on)(1) Base-emitter on voltage IC = 10 A VCE = 4 V 3 V DC current gain IC = 5 A IC = 10 A VCE = 4 V VCE = 4 V hFE(1) ton toff 1. Min. Resistive load Turn-on time Turn-off time RL = 3 Ω IC = 10 A IB1 = -IB2 = 40 mA 1000 500 0.9 4 µs µs Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %. Note: For PNP type voltage and current are negative. Doc ID 4135 Rev 5 3/8 Electrical characteristics 2.1 TIP142T, TIP147T Test circuits Figure 2. Resistive load switching test circuit (NPN type) 1. Fast electronic switch 2. Non-inductive resistor Figure 3. Resistive load switching test circuit (PNP type) 1. Fast electronic switch 2. Non-inductive resistor 4/8 Doc ID 4135 Rev 5 TIP142T, TIP147T 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 4135 Rev 5 5/8 Package mechanical data TIP142T, TIP147T TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 6/8 Doc ID 4135 Rev 5 TIP142T, TIP147T 4 Revision history Revision history Table 5. Document revision history Date Revision 21-Jun-2004 4 20-May-2010 5 Changes Technology change from epitaxial base to planar base island. 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