MMDT4403TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts SOT-563 FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-563, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.003 gram 6 5 4 1 2 3 • Marking: TZ Fig.53 ABSOLUTE RATINGS Parameter Symbol Value Units Collector - E mitter Voltage VCEO -40 V Collector - B ase Voltage VCBO -40 V Emitter - B ase Voltage VEBO -5.0 V IC -500 mA Symbol Value Units Max Power Dissipation (Note 1) PTOT 200 mW Thermal Resistance , Junction to Ambient RJA 625 Junction Temperature TJ -55 to 150 O Storage Temperature TSTG -55 to 150 O Collector Current - C ontinuous THERMAL CHARACTERISTICS Parameter C/W O C C Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.1-JUN.29.2009 PAGE . 1 MMDT4403TB6 ELECTRICAL CHARACTERISTICS P a ra me te r MIN. TYP. MA X . Uni ts V ( B R) C E O IC =-1 .0 mA , IB =0 -4 0 - - V C o lle c to r - B a s e B re a kd o wn Vo lta g e V ( B R) C B O IC =-1 0 0 uA , IE =0 -4 0 - - V E mi tte r - B a s e B re a k d o wn V o lta g e V ( B R) E B O IE = -1 0 0 uA , IC = 0 -5 .0 - - V C o lle c to r - E mi tte r B r e a k d o wn Vo lta g e B a s e C uto ff C urre nt C o lle c to r C uto ff C urre nt D C C urr e nt Ga i n ( No te 2 ) S ymb o l Te st C o nd i ti o n IB L V C E =-3 5 V, V E B =-0 .4 V - - -100 nA IC E X V C E =-3 5 V, V E B =-0 .4 V - - -100 nA hF E IC =-0 .1 mA , V C E =- 1 .0 V IC =-1 .0 mA , V C E =- 1 .0 V IC =-1 0 mA , V C E =- 1 .0 V IC =-1 5 0 mA , V C E =- 2 .0 V IC =-5 0 0 mA , V C E =- 2 .0 V 30 60 100 90 20 - 300 - - C o lle c to r - E mi tte r S a tura ti o n Vo lta g e ( No te 2 ) V C E ( S AT) IC =-1 5 0 mA , IB =- 1 5 mA IC =-5 0 0 mA , IB =- 5 0 mA - - - 0 .4 0 - 0 .7 5 V B a s e - E mi tte r S atura ti o n Vo lta g e ( No te 2 ) V B E (S AT) IC =-1 5 0 mA , IB =- 1 5 mA IC =-5 0 0 mA , IB =- 5 0 mA 0 .7 5 - - - 0 .9 5 - 1 .3 0 V C o lle c to r - B a s e C a p a ci ta nc e C CBO V C B = -5 V, IE =0 , f =1 MHz - - 6 .5 pF E mi tte r - B a s e C a p a c i ta nce C EBO V C B = -0 .5 V, I C = 0 , f= 1 MHz - - 30 pF C ur re nt Ga i n - B a nd wi d th P ro d uc t FT V C E =-1 0 V, IC =-2 0 mA , f=1 0 0 MHz 200 - - MHz D e la y Ti me td V C C =-3 0 V,V B E =-2 .0 V, IC =-1 5 0 mA ,IB 1 =- 1 5 mA - - 15 ns Ri s e Ti me tr V C C =-3 0 V,V B E =-2 .0 V, IC =-1 5 0 mA ,IB 1 =- 1 5 mA - - 20 ns S to ra g e Ti me ts V C C =-3 0 V,IC =-1 5 0 mA IB 1 =IB 2 =-1 5 mA - - 225 ns F a ll Ti me tf V C C =-3 0 V,IC =-1 5 0 mA IB 1 =IB 2 =-1 5 mA - - 30 ns REV.0.1-JUN.29.2009 PAGE . 2 MMDT4403TB6 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 4K per 7" plastic Reel T/R - 10K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-JUN.29.2009 PAGE . 3