MMBD330/MMBD770 Schottky Barrier Diodes SOT-323 Features Extremely low minority carrier lifetime. Very low capacitance. Low reverse leakage. Applications For high-efficiency UHF and VHF detector application. Dimensions in inches and (millimeters) Ordering Information Type No. Marking Package Code MMBD330 MMBD770 4T 5H SOT-323 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit VR 30 70 V Forward Continuous Current (DC) IF 200 mA Peak Forward Surge Current IFSM 1.0 A Power Dissipation Pd 120 mW Junction temperature Tj 150 ℃ Storage temperature range Tstg -55-+150 ℃ Reverse voltage MMBD330 MMBD770 http://www.luguang.cn mail:[email protected] MMBD330/MMBD770 Schottky Barrier Diodes ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown voltage MMBD330 MMBD770 Reverse current MMBD330 MMBD770 Forward voltage MMBD330 MMBD770 Diode capacitance MMBD330 MMBD770 Symbol V(BR)R Test conditions IR=100μA MIN MAX 30 70 UNIT V IR VR=25V VR=35V 200 200 nA VF IF=1.0mA IF=10mA IF=1.0mA IF=10mA 0.45 0.60 0.50 1.0 V CD VR=15V,f=1MHz VR=20V,f=1MHz 0.9 0.5 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified http://www.luguang.cn mail:[email protected] MMBD330/MMBD770 Schottky Barrier Diodes http://www.luguang.cn mail:[email protected]