TC4W66F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4W66F,TC4W66FU Dual Bilateral Switch The TC4W66 contains two independence circuits of bidirectional switches. When control input CONT is set to “H” level, the impedance between input and output of the switch becomes low and when it is set to “L” level, the switch becomes high. This can be applied for switching of analog signals and digital signals. TC4W66F Features • ON-resistance, RON 250 Ω (typ.) ................... VDD − VSS = 5 V TC4W66FU 110 Ω (typ.) ................... VDD − VSS = 10 V 70 Ω (typ.)..................... VDD − VSS = 15 V • OFF-resistance, ROFF ROFF (typ.) > 109 Ω Weight SOP8-P-1.27: 0.05 g (typ.) SSOP8-P-0.65: 0.02 g (typ.) Absolute Maximum Ratings Symbol Rating Unit DC supply voltage Characteristics VDD VSS − 0.5 to VSS + 20 V Control input voltage VC IN VSS − 0.5 to VDD + 0.5 V Switch I/O voltage VI/O VSS − 0.5 to VDD + 0.5 V Power dissipation PD 300 mW Potential difference across I/O during ON VI-VO ±0.5 V Control input current IC IN ±10 mA Operating temperature range Topr −40 to 85 °C Storage temperature Tstg −65 to 150 °C Lead temp./time TL 260°C/10 s Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TC4W66F TC4W66FU 1 2007-11-01 TC4W66F/FU Logic Diagram Pin Assignment (top view) (1/2 TC4W66F) Truth Table Control Impedance Between IN/OUT-OUT/IN (Note 1) 2 H 0.5 to 5 × 10 Ω L >10 Ω 9 Note 1: See static electrical characteristics. Operating Ranges (VSS = 0 V) Characteristics DC supply voltage Input/output voltage Symbol Test Condition Min Typ. Max Unit VDD ⎯ 3 ⎯ 18 V VDD/VOUT ⎯ 0 ⎯ VDD V Static Electrical Characteristics (in case not specifically appointed, VSS = 0 V) Characteristics Control input high voltage Control input low voltage On-state resistance VIH VIL RON ΔOn-state resistance (between any 2 switches) Input/output leakage current Quiescent device current Input current Symbol H level L level RONΔ IOFF IDD IIH IIL Test Test Condition V Circuit DD (V) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⏐IIS⏐ = 10 μA ⏐IIS⏐ = 10 μA 0< = VIS < = VDD RL = 10 kΩ Ta = −40°C Ta = 25°C Ta = 85°C Min Max Min Typ. Max Min Max 5 3.5 ⎯ 3.5 2.75 ⎯ 3.5 ⎯ 10 7.0 ⎯ 7.0 5.50 ⎯ 7.0 ⎯ 15 11.0 ⎯ 11.0 8.25 ⎯ 11.0 ⎯ 5 ⎯ 1.5 ⎯ 2.25 1.5 ⎯ 1.5 10 ⎯ 3.0 ⎯ 4.5 3.0 ⎯ 3.0 15 ⎯ 4.0 ⎯ 6.75 4.0 ⎯ 4.0 5 ⎯ 800 ⎯ 290 950 ⎯ 1200 10 ⎯ 210 ⎯ 120 250 ⎯ 300 15 ⎯ 140 ⎯ 85 160 ⎯ 200 5 ⎯ ⎯ ⎯ 10 ⎯ ⎯ ⎯ 10 ⎯ ⎯ ⎯ 6 ⎯ ⎯ ⎯ 15 ⎯ ⎯ ⎯ 4 ⎯ ⎯ ⎯ VIN = 18 V, VOUT = 0 V 18 ⎯ ±100 ⎯ ±0.1 ±100 ⎯ ±1000 VIN = 0 V, VOUT = 18 V 18 ⎯ ±100 ⎯ ±0.1 ±100 ⎯ ±1000 5 ⎯ 0.25 ⎯ 0.001 0.25 ⎯ 7.5 10 ⎯ 0.5 ⎯ 0.001 0.5 ⎯ 15 15 ⎯ 1.0 ⎯ 0.002 1.0 ⎯ 30 0.1 ⎯ 1.0 −0.1 ⎯ −1.0 ⎯ VIN = VDD, VSS* VIH = 18 V VIL = 0 V Unit V V Ω Ω nA 18 18 ⎯ ⎯ 2 0.1 −0.1 ⎯ ⎯ 10 −5 −10 −5 μA μA 2007-11-01 TC4W66F/FU Dynamic Electrical Characteristics (Ta = 25°C, VSS = 0 V, CL = 50 pF) Characteristics Phase difference between input to output Propagation delay time (CONTROL-OUT) Propagation delay time (CONTROL-OUT) Max control input repetition Rate −3dB cutoff frequency Symbol φI-O tpZL tpZH tpLZ tpHZ fmax (C) fmax (I-O) Test Circuit ⎯ ⎯ ⎯ ⎯ ⎯ Total harmonic distortion ⎯ ⎯ −50dB feed through frequency ⎯ −50dB crosstalk frequency ⎯ Crosstalk (CONTROL-OUT) Input capacitance Feed through capacitance ⎯ CIN CIN-OUT Test Condition CL = 50 pF RL = 1 kΩ CL = 50 pF RL = 1 kΩ CL = 50 pF RL = 1 kΩ CL = 50 pF RL = 1 kΩ CL = 50 pF (Note 1) RL = 10 kΩ VSS (V) VDD (V) Min Typ. Max Unit 0 5 ⎯ 15 40 0 10 ⎯ 8 20 0 15 ⎯ 5 15 0 5 ⎯ 55 120 0 10 ⎯ 25 40 0 15 ⎯ 20 30 0 5 ⎯ 45 80 0 10 ⎯ 30 70 0 15 ⎯ 25 60 0 5 ⎯ 10 ⎯ 0 10 ⎯ 12 ⎯ 0 15 ⎯ 12 ⎯ −5 5 ⎯ 30 ⎯ MHz −5 5 ⎯ 0.03 ⎯ % ns ns ns MHz f = 1 kHz (Note 2) ⎯ RL = 1 kΩ (Note 3) −5 5 ⎯ 600 ⎯ kHz ⎯ RL = 1 kΩ (Note 4) −5 5 ⎯ 1 ⎯ MHz RIN = 1 kΩ 0 5 ⎯ 200 ⎯ ROUT = 10 kΩ 0 10 ⎯ 400 ⎯ CL = 15 pF 0 15 ⎯ 600 ⎯ ⎯ ⎯ Control input ⎯ 5 7.5 ⎯ Switch I/O ⎯ 10 ⎯ ⎯ 0.5 ⎯ ⎯ ⎯ Note 1: Since wave of ±2.5 Vp-p shall be used for VIS and the frequency of 20 ℓog 10 mV pF pF VOS = −3dB shall be fmax. VIS Note 2: VIS shall be sine wave of ±2.5 Vp-p. Note 3: Sine wave of ±2.5 Vp-p shall be used for VIS and the frequency of 20 ℓog 10 VOUT VIS = −50dB shall be VOUT VIS = −50dB shall be feed-through. Note 4: Sine wave of ±2.5 Vp-p shall be used for VIS and the frequency of 20 ℓog 10 crosstalk. 3 2007-11-01 TC4W66F/FU 1. tpLH, tpHL I/O-O/I 2. tpZL, tpZH, tpLZ, tpHZ Control-O/I 3. RON 4. fmax (C) 4 2007-11-01 TC4W66F/FU 5. Crosstalk (switch I/O) 6. Crosstalk (control input) 7. Total Harmonic Distortion, fmax (I/O-O/I), Feedthrough (switch OFF) 2.5 V I/O IN. 0V −2.5 V 1 f 5 2007-11-01 TC4W66F/FU Package Dimensions Weight: 0.05 g (typ.) 6 2007-11-01 TC4W66F/FU Package Dimensions Weight: 0.02 g (typ.) 7 2007-11-01 TC4W66F/FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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