TC74HC04AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC04AP,TC74HC04AF
Hex Inverter
The TC74HC04A is a high speed CMOS INVERTER fabricated
with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages, including buffered
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against satic
discharge or transient excess voltage.
TC74HC04AP
Features
TC74HC04AF
•
High speed: tpd = 6 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
Output drive capability: 10 LSTTL loads
•
•
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
∼ tpHL
Balanced propagation delays: tpLH −
•
Wide operating voltage range: VCC (opr) = 2 to 6 V
•
Pin and function compatible with 74LS04
Pin Assignment
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
: 0.96 g (typ.)
: 0.18 g (typ.)
IEC Logic Symbol
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TC74HC04AP/AF
Truth Table
A
Y
L
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
−65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2 to 6
V
Input voltage
VIN
0 to VCC
V
VOUT
0 to VCC
V
Topr
−40 to 85
°C
Output voltage
Operating temperature
0 to 1000 (VCC = 2.0 V)
Input rise and fall time
tr, tf
0 to 500 (VCC = 4.5 V)
ns
0 to 400 (VCC = 6.0 V)
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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TC74HC04AP/AF
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
VCC (V)
Min
Typ.
Max
Min
Max
2.0
1.50
⎯
⎯
1.50
⎯
4.5
3.15
⎯
⎯
3.15
⎯
6.0
4.20
⎯
⎯
4.20
⎯
2.0
⎯
⎯
0.50
⎯
0.50
4.5
⎯
⎯
1.35
⎯
1.35
6.0
⎯
⎯
1.80
⎯
1.80
2.0
1.9
2.0
⎯
1.9
⎯
4.5
4.4
4.5
⎯
4.4
⎯
6.0
5.9
6.0
⎯
5.9
⎯
IOH = −4 mA
4.5
4.18
4.31
⎯
4.13
⎯
IOH = −5.2 mA
6.0
5.68
5.80
⎯
5.63
⎯
2.0
⎯
0.0
0.1
⎯
0.1
4.5
⎯
0.0
0.1
⎯
0.1
6.0
⎯
0.0
0.1
⎯
0.1
IOL = 4 mA
4.5
⎯
0.17
0.26
⎯
0.33
IOL = 5.2 mA
6.0
⎯
0.18
0.26
⎯
0.33
⎯
VIH
⎯
VIL
IOH = −20 μA
High-level output
voltage
VOH
VIN
= VIH or VIL
IOL = 20 μA
Low-level output
voltage
VOL
Ta =
−40 to 85°C
Ta = 25°C
Test Condition
Symbol
VIN
= VIH or VIL
Unit
V
V
V
V
Input leakage
current
IIN
VIN = VCC or GND
6.0
⎯
⎯
±0.1
⎯
±1.0
μA
Quiescent supply
current
ICC
VIN = VCC or GND
6.0
⎯
⎯
1.0
⎯
10.0
μA
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
4
8
ns
⎯
⎯
6
12
ns
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
tTLH
tTHL
tpLH
tpHL
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TC74HC04AP/AF
AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Characteristics
Output transition time
Propagation delay
time
Symbol
tTLH
tTHL
tpLH
tpHL
Input capacitance
CIN
Power dissipation
capacitance
CPD
Note:
(Note)
Ta =
−40 to 85°C
Ta = 25°C
Test Condition
Unit
VCC (V)
Min
Typ.
Max
Min
Max
2.0
⎯
30
75
⎯
95
4.5
⎯
8
15
⎯
19
6.0
⎯
7
13
⎯
16
2.0
⎯
27
75
⎯
95
4.5
⎯
9
15
⎯
19
6.0
⎯
8
13
⎯
16
⎯
⎯
5
10
⎯
10
pF
⎯
⎯
20
⎯
⎯
⎯
pF
⎯
⎯
ns
ns
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC/6 (per gate)
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TC74HC04AP/AF
Package Dimensions
Weight: 0.96 g (typ.)
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TC74HC04AP/AF
Package Dimensions
Weight: 0.18 g (typ.)
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2012-02-29
TC74HC04AP/AF
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