KSA473 PNP Epitaxial Silicon Transistor Features • • • • Low Frequency Power Amplifier, Power Regulator Collector Current : IC= -3A Collector Dissipation : PC = 10W (TC=25°C) Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 30 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to + 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2009 Fairchild Semiconductor Corporation KSA473 Rev. A2 www.fairchildsemi.com 1 KSA473 — PNP Epitaxial Silicon Transistor August 2009 Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = - 500μA, IE = 0 - 30 V BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 30 V BVEBO Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = - 20V, IE = 0 - 1.0 μA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1.0 μA hFE1 hFE2 DC Current Gain VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A VCE(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.8 V VBE(on) Base-Emitter On Voltage VCE = - 2V, IC = - 0.5A - 0.75 - 1.0 V Current Gain Bandwidth Product VCE= - 2V, IC = - 0.5A 100 MHz Output Capacitance VCB = - 10V, IE = 0, f = 1MHz 40 pF fT Cob 70 25 240 hFE Classification Classification O Y hFE1 70 ~ 140 120 ~ 240 © 2009 Fairchild Semiconductor Corporation KSA473 Rev. A2 www.fairchildsemi.com 2 KSA473 — PNP Epitaxial Silicon Transistor Electrical Characteristics -3.2 1000 IB = -40mA IB = -35mA IB = -30mA -2.4 VCE = -2V IB = -25mA -2.0 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -2.8 IB = -20mA -1.6 IB = -15mA -1.2 IB = -10mA -0.8 IB = -5mA -0.4 100 10 IB = -3mA -0.0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 1 -0.01 -10 -0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -3.6 IC = 10 IB VCE = -2V IC[A], COLLECTOR CURRENT -3.2 VBE(sat) -0.1 -0.01 -0.01 -10 Figure 2. DC current Gain -10 -1 -1 IC[A], COLLECTOR CURRENT VCE(sat) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.0 -0.0 -0.1 -1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -10 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 1000 IC MAX. (Pulse) IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE f=1MHz IE=0 100 10 1 -1 -10 o TC=25 C -1 S/B limitation * Single Pulse o TC=25 C -1 VCB[V], COLLECTOR-BASE VOLTAGE -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area © 2009 Fairchild Semiconductor Corporation KSA473 Rev. A2 Thermal limitation *50ms -0.1 -100 *1ms *10ms IC MAX. (DC) www.fairchildsemi.com 3 KSA473 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics KSA473 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating © 2009 Fairchild Semiconductor Corporation KSA473 Rev. A2 www.fairchildsemi.com 4 KSA473 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-220 © 2009 Fairchild Semiconductor Corporation KSA473 Rev. A2 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com