AP2304AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Small Package Outline
BVDSS
30V
RDS(ON)
117mΩ
ID
▼ Surface Mount Device
2.5A
S
▼ RoHS Compliant
SOT-23
G
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
The SOT-23 package is widely used for all commercial-industrial
applications.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±20
V
3
2.5
A
3
2
A
10
A
1.38
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200805211
AP2304AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=2.5A
-
-
117
mΩ
VGS=4.5V, ID=2A
-
-
190
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=2.5A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=2.5A
-
3
5
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.8
-
nC
VDS=15V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=15Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
120
190
pF
Coss
Output Capacitance
VDS=25V
-
62
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
24
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.67
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
IS=2A, VGS=0V,
-
24
-
ns
dI/dt=100A/µs
-
23
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2304AGN-HF
10
10
T A =150 o C
T A =25 o C
10V
6.0V
5.0V
6
4.0V
4
10V
6.0V
5.0V
8
ID , Drain Current (A)
ID , Drain Current (A)
8
6
4.0V
4
2
2
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
6
7
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
140
1.8
I D =2A
130
V G =10V
I D =2.5A
1.6
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
120
110
100
90
1.4
1.2
1.0
0.8
80
0.6
70
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
10.00
2.05
1.85
1.00
T j =25 o C
VGS(th) (V)
IS (A)
T j =150 o C
1.65
0.10
1.45
1.25
0.01
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2304AGN-HF
12
f=1.0MHz
1000
I D =2.5A
V DS =24V
V DS =20V
V DS =15V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
100
C oss
4
C rss
2
10
0
0
1
2
3
4
5
1
6
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thja)
Duty factor=0.5
ID (A)
10
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.01
0.1
1
10
100
0.2
0.1
0.1
0.05
PDM
t
0.01
0.01
T
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
Single Pulse
Rthja = 270℃/W
0.001
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4