Infineon® Basic LED Driver TLD1121EL 1 Channel High Side Current Source Data Sheet Rev. 1.0, 2013-08-08 Automotive TLD1121EL 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 3.1 3.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 4.1 4.2 4.3 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5.1 5.2 5.3 5.3.1 5.3.2 5.4 EN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EN Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internal Supply Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EN Unused . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EN - Pull Up to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EN - Direct Connection to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Internal Supply / EN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6.1 6.2 IN_SET Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Output Current Adjustment via RSET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Smart Input Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 7.1 7.2 7.3 ST Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disable Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 18 18 18 8 8.1 8.2 8.3 Load Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit to GND detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics IN_SET Pin and Load Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 20 21 23 9 9.1 9.1.1 9.1.2 9.2 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Load Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Battery Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 25 25 25 26 10 10.1 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Data Sheet 2 8 8 9 9 10 10 11 12 12 12 13 Rev. 1.0, 2013-08-08 1 Channel High Side Current Source Basic LED Driver 1 TLD1121EL Overview Features • • • • • • • • • • • • • 1 Channel device with integrated output stage (current source), optimized to drive LEDs Output current up to 360mA Low current consumption in sleep mode PWM-operation supported via VS- and EN-pin Output current adjustable via external low power resistor and possibility to connect PTC resistor for LED protection during over temperature conditions Reverse polarity protection Overload protection Undervoltage detection Open load and short circuit to GND diagnosis Wide temperature range: -40 °C < Tj < 150 °C PG-SSOP14 package with exposed heatslug Green Product (RoHS compliant) AEC Qualified PG-SSOP14 Description The Basic LED Driver TLD1121EL is a one channel high side driver IC with integrated output stage. It is designed to control LEDs with a current up to 360 mA. In typical automotive applications the device is capable to drive i.e. 3 red LEDs with a current up to 180 mA, which is limited by thermal cooling aspects. The output current is controlled practically independent of load and supply voltage changes. Table 1 Product Summary VS(nom) VS(max) VOUT(max) IOUT(nom) Operating voltage Maximum voltage Nominal output (load) current Maximum output (load) current Output current accuracy at RSET = 12 kΩ Current consumption in sleep mode IOUT(max) kLT IS(sleep,typ) 5.5 V… 40 V 40 V 180 mA when using a supply voltage range of 8V - 18V (e.g. Automotive car battery). Currents up to IOUT(max) possible in applications with low thermal resistance RthJA 360 mA; depending on thermal resistance RthJA 2250 ± 7% 0.1 µA Type Package Marking TLD1121EL PG-SSOP14 TLD1121EL Data Sheet 3 Rev. 1.0, 2013-08-08 TLD1121EL Overview Protective functions - ESD protection - Under voltage lock out - Over Load protection - Over Temperature protection - Reverse Polarity protection Diagnostic functions - OL detection - SC to Vs (indicated by OL diagnosis) - SC to GND detection Applications Designed for exterior LED lighting applications such as tail/brake light, turn indicator, position light, side marker,... The device is also well suited for interior LED lighting applications such as ambient lighting, interior illumination and dash board lighting. Data Sheet 4 Rev. 1.0, 2013-08-08 TLD1121EL Block Diagram 2 Block Diagram VS Internal supply EN Thermal protection Output control OUT IN_SET Current adjust TLD1121EL Figure 1 Data Sheet Status ST GNDS GND Basic Block Diagram 5 Rev. 1.0, 2013-08-08 TLD1121EL Pin Configuration 3 Pin Configuration 3.1 Pin Assignment Figure 2 Data Sheet VS 1 VS 2 EN 3 NC 4 GNDS 14 NC 13 NC 12 OUT 11 NC 5 10 ST IN_SET 6 9 GND NC 7 8 NC TLD1121EL EP Pin Configuration 6 Rev. 1.0, 2013-08-08 TLD1121EL Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Input/ Output Function 1, 2 VS – Supply Voltage; battery supply, connect a decoupling capacitor (100 nF 1 µF) to GND 3 EN I Enable pin 4 NC – Pin not connected 5 GNDS – 1) 6 IN_SET I/O Input / SET pin; Connect a low power resistor to adjust the output current 7 NC – Pin not connected 8 NC – Pin not connected GNDS; Signal GND, connect to GND 9 GND – 1) 10 ST I/O Status pin 11 NC – Pin not connected 12 OUT O Output 13 NC – Pin not connected 14 NC – Pin not connected – 1) Exposed Pad GND Ground Exposed Pad; connect to GND in application 1) Connect all GND-pins together. Data Sheet 7 Rev. 1.0, 2013-08-08 TLD1121EL General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. VS VEN VEN(VS) VEN VOUT VOUT VPS -16 40 V – -16 40 V – VS - 40 VS + 16 V – -16 40 V – -1 40 V – -16 40 V – -0.3 6 V – -0.3 6 V – Voltages 4.1.1 Supply voltage 4.1.2 Input voltage EN 4.1.3 Input voltage EN related to VS 4.1.4 Input voltage EN related to VOUT VEN - VOUT 4.1.5 4.1.6 Output voltage Power stage voltage VPS = VS - VOUT 4.1.7 IN_SET voltage 4.1.8 Status voltage VIN_SET VST 4.1.9 IN_SET current IIN_SET – – 2 8 mA – Diagnosis output 4.1.10 Output current IOUT – 390 mA – Tj Tstg -40 150 °C – -55 150 °C – Currents Temperatures 4.1.11 Junction temperature 4.1.12 Storage temperature ESD Susceptibility 4.1.13 ESD resistivity to GND VESD -2 2 kV Human Body Model (100 pF via 1.5 kΩ)2) 4.1.14 ESD resistivity all pins to GND -500 500 V CDM3) 4.1.15 ESD resistivity corner pins to GND VESD VESD -750 750 V CDM3) 1) Not subject to production test, specified by design 2) ESD susceptibility, Human Body Model “HBM” according to ANSI/ESDA/JEDEC JS-001-2011 3) ESD susceptibility, Charged Device Model “CDM” according to JESD22-C101E Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 8 Rev. 1.0, 2013-08-08 TLD1121EL General Product Characteristics 4.2 Pos. Functional Range Parameter Symbol Limit Values Min. Max. Unit Conditions 4.2.16 Supply voltage range for normal operation VS(nom) 5.5 40 V – 4.2.17 Power on reset threshold VS(POR) – 5 V VEN = VS RSET = 12 kΩ IOUT = 80% IOUT(nom) VOUT = 2.5 V 4.2.18 Junction temperature Tj -40 150 °C – Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Pos. Thermal Resistance Parameter 4.3.1 Junction to Case 4.3.2 Junction to Ambient 1s0p board Symbol RthJC RthJA1 Limit Values Min. Typ. Max. – 8 10 – – 4.3.3 Junction to Ambient 2s2p board 61 56 Unit Conditions K/W 1) 2) K/W 1) 3) Ta = 85 °C Ta = 135 °C – – RthJA2 K/W – – 45 43 – – 1) 4) Ta = 85 °C Ta = 135 °C 1) Not subject to production test, specified by design. Based on simulation results. 2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins and the exposed Pad are fixed to ambient temperature). Ta = 85°C, Total power dissipation 1.5 W. 3) The RthJA values are according to Jedec JESD51-3 at natural convection on 1s0p FR4 board. The product (chip + package) was simulated on a 76.2 x 114.3 x 1.5 mm3 board with 70µm Cu, 300 mm2 cooling area. Total power dissipation 1.5 W distributed statically and homogenously over power stage. 4) The RthJA values are according to Jedec JESD51-5,-7 at natural convection on 2s2p FR4 board. The product (chip + package) was simulated on a 76.2 x 114.3 x 1.5 mm3 board with 2 inner copper layers (outside 2 x 70 µm Cu, inner 2 x 35µm Cu). Where applicable, a thermal via array under the exposed pad contacted the first inner copper layer. Total power dissipation 1.5 W distributed statically and homogenously over power stage. Data Sheet 9 Rev. 1.0, 2013-08-08 TLD1121EL EN Pin 5 EN Pin The EN pin is a dual function pin: Internal Supply Output Control EN V EN Figure 3 Block Diagram EN pin Note: The current consumption at the EN-pin IEN needs to be added to the total device current consumption. The total current consumption is the sum of the currents at the VS-pin IS and the EN-pin IEN. 5.1 EN Function If the voltage at the pin EN is below a threshold of VEN(off) the Basic LED Driver IC will enter Sleep mode. In this state all internal functions are switched off, the current consumption is reduced to IS(sleep). A voltage above VEN(on) at this pin enables the device after the Power on reset time tPOR. VS V EN IOU T t t tPOR 100% 80% t Figure 4 Data Sheet Power on reset 10 Rev. 1.0, 2013-08-08 TLD1121EL EN Pin 5.2 Internal Supply Pin The EN pin can be used to supply the internal logic. There are two typical application conditions, where this feature can be used: 1) In “DC/DC control Buck” configurations, where the voltage Vs can be below 5.5V. 2) In configurations, where a PWM signal is applied at the Vbatt pin of a light module. The buffer capacitor CBUF is used to supply the Basic LED Driver IC during Vbatt low (Vs low) periods. This feature can be used to minimize the turn-on time to the values specified in Pos. 9.2.13. Otherwise, the power-on reset delay time tPOR (Pos. 5.4.7) has to be considered. The capacitor can be calculated using the following formula: I EN ( LS ) C BUF = tLOW ( max ) ⋅ -------------------------------------------------V S – V D1 – V S ( POR ) (1) See also a typical application drawing in Chapter 10. VBATT VS D1 EN CBUF Internal supply Thermal protection Output control OUT IN_SET RSET Current adjust Basic LED Driver GND GND Figure 5 Data Sheet External circuit when applying a fast PWM signal on VBATT 11 Rev. 1.0, 2013-08-08 TLD1121EL EN Pin V EN t V BATT IOU T t tON (VS) 100% 80% Switch off behavior depends on V BATT and load characteristics 20% t Figure 6 Typical waveforms when applying a fast PWM signal on VBATT The parameter tON(VS) is defined at Pos. 9.2.13. The parameter tOFF(VS) depends on the load and supply voltage VBATT characteristics. 5.3 EN Unused In case of an unused EN pin, there are two different ways to connect it: 5.3.1 EN - Pull Up to VS The EN pin can be connected with a pull up resistor (e.g. 10 kΩ) to Vs potential. In this configuration the Basic LED Driver IC is always enabled. 5.3.2 EN - Direct Connection to VS The EN pin can be connected directly to the VS pin (IC always enabled). This configuration has the advantage (compared to the configuration described in Chapter 5.3.1) that no additional external component is required. Data Sheet 12 Rev. 1.0, 2013-08-08 TLD1121EL EN Pin 5.4 Electrical Characteristics Internal Supply / EN Pin Electrical Characteristics Internal Supply / EN pin Unless otherwise specified: VS = 5.5 V to 40 V, Tj = -40 °C to +150 °C, RSET = 12 kΩ all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol 5.4.1 Current consumption, sleep mode IS(sleep) 5.4.2 Current consumption, active mode IS(on) Limit Values Min. Typ. Max. – 0.1 2 Current consumption, device disabled via ST – – – – – – 1.4 0.65 1.4 Current consumption, IS(dis,IN_SET) device disabled via IN_SET mA – – – 1.4 0.7 1.4 Current consumption, IS(fault,STu) active mode in fault detection condition with STpin unconnected mA – – – – – – Data Sheet 1) mA – – – 5.4.5 µA 1.4 0.75 1.5 IS(dis,ST) – – – 5.4.4 Conditions mA – – – 5.4.3 Unit 13 1.7 1.1 1.8 VEN = 0.5 V Tj < 85 °C VS = 18 V VOUT = 3.6 V 2) IIN_SET = 0 µA Tj < 105 °C VS = 18 V VOUT = 3.6V VEN = 5.5 V VEN = 18 V 1) REN = 10 kΩ between VS and EN-pin 2) VS = 18 V Tj < 105 °C VST = 5 V VEN = 5.5 V VEN = 18 V 1) REN = 10 kΩ between VS and EN-pin 2) VS = 18 V Tj < 105 °C VIN_SET = 5 V VEN = 5.5 V VEN = 18 V 1) REN = 10 kΩ between VS and EN-pin 2) VS = 18 V Tj < 105 °C RSET = 12 kΩ VOUT = 18 V or 0 V VEN = 5.5 V VEN = 18 V 1) REN = 10 kΩ between VS and EN-pin Rev. 1.0, 2013-08-08 TLD1121EL EN Pin Electrical Characteristics Internal Supply / EN pin (cont’d) Unless otherwise specified: VS = 5.5 V to 40 V, Tj = -40 °C to +150 °C, RSET = 12 kΩ all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol 5.4.6 Current consumption, IS(fault,STG) active mode in fault detection condition with STpin connected to GND Limit Values Min. Typ. – – – – – – Unit Conditions mA 2) Max. VS = 18 V Tj < 105 °C RSET = 12 kΩ VOUT = 18 V or 0 V VST = 0 V VEN = 5.5 V VEN = 18 V 1) REN = 10 kΩ between 6.0 4.9 5.9 VS and EN-pin 5.4.7 Power-on reset delay time 3) tPOR – – 25 µs 1) VOUT(nom) = 3.6 ± 0.3V IOUT = 80% IOUT(nom) VEN = 5.5 V VOUT = 3 V IOUT = 50% IOUT(nom) VEN = 5.5 V VOUT = 3.6 V IOUT ≥ 90% IOUT(nom) 5.4.8 Required supply voltage for VS(on) output activation – – 4 V 5.4.9 Required supply voltage for VS(CC) current control – – 5.2 V 5.4.10 VEN(on) EN turn off threshold VEN(off) EN input current during low IEN(LS) – – 2.5 V – 0.8 – – V – – – 1.8 mA 1) – – – – – – – – 0.1 0.1 1.65 0.45 5.4.11 5.4.12 EN turn on threshold supply voltage 5.4.13 EN high input current IEN(H) mA VS = VEN = 0 → 13.5 V VS = 4.5 V Tj < 105 °C VEN = 5.5 V Tj < 105 °C VS = 13.5 V, VEN = 5.5 V VS = 18 V, VEN = 5.5 V VS = VEN = 18 V 1) VS = 18 V, REN = 10 kΩ between VS and EN-pin 1) Not subject to production test, specified by design 2) The total device current consumption is the sum of the currents IS and IEN(H), please refer to Pos. 5.4.13 3) See also Figure 4 Data Sheet 14 Rev. 1.0, 2013-08-08 TLD1121EL IN_SET Pin 6 IN_SET Pin The IN_SET pin is a multiple function pin for output current definition, input and diagnostics: Logic IN_SET high impedance IIN_SET VIN_SET VIN_SET(OL/SC) GND Figure 7 Block Diagram IN_SET pin 6.1 Output Current Adjustment via RSET The current adjustment can be done by placing a low power resistor (RSET) at the IN_SET pin to ground. The dimensioning of the resistor can be done using the formula below: kR SET = ---------I OUT (2) The gain factor k (RSET * output current) is specified in Pos. 9.2.4 and Pos. 9.2.5. The current through the RSET is defined by the resistor itself and the reference voltage VIN_SET(ref), which is applied to the IN_SET during supplied device. 6.2 Smart Input Pin The IN_SET pin can be connected via RSET to the open-drain output of a µC or to an external NMOS transistor as described in Figure 8. This signal can be used to turn off the output stage of the IC. A minimum IN_SET current of IIN_SET(act) is required to turn on the output stage. This feature is implemented to prevent glimming of LEDs caused by leakage currents on the IN_SET pin, see Figure 11 for details. In addition, the IN_SET pin offers the diagnostic feedback information, if the status pin is connected to GND. Another diagnostic possibility is shown in Figure 9, where the diagnosis information is provided via the ST pin (refer to Chapter 7 and Chapter 8) to a micro controller. In case of a fault event with the ST pin connected to GND the IN_SET voltage is increased to VIN_SET(OL/SC) Pos. 8.3.2. Therefore, the device has two voltage domains at the IN_SET-pin, which is shown in Figure 12. Data Sheet 15 Rev. 1.0, 2013-08-08 TLD1121EL IN_SET Pin Microcontroller (e.g. XC866) OUT RSET/2 RSET/2 IN_SET Current adjust Status Basic LED Driver ST GND IN VDDP = 5 V Figure 8 Schematics IN_SET interface to µC, diagnosis via IN_SET pin Microcontroller (e.g. XC866) OUT RSET IN_SET Current adjust Status Basic LED Driver ST GND IN VDDP = 5 V Figure 9 optional Schematics IN_SET interface to µC, diagnosis via ST pin The resulting switching times are shown in Figure 10: IIN_ SET IOU T tON (IN_ SET ) tOFF(IN _ SET) t 100% 80% 20% t Figure 10 Data Sheet Switching times via IN_SET 16 Rev. 1.0, 2013-08-08 TLD1121EL IN_SET Pin IOUT [mA] k = IOUTx * VIN_SET(ref) / IIN_SETx IOUTx IIN_SET(ACT) Figure 11 IIN_SETx IIN_SET [µA] IOUT versus IINSET V IN_ SET VIN _SET( OL /SC)m ax Diagnostic voltage range V IN_ SET(OL /SC) m in VIN _SET (ref ) m ax Normal operation and high temperature current reduction range Figure 12 Data Sheet Voltage domains for IN_SET pin, if ST pin is connected to GND 17 Rev. 1.0, 2013-08-08 TLD1121EL ST Pin 7 ST Pin The ST pin is a multiple function pin. IST(OL/SC) VST(OL/SC) No fault Fault Output Control ST No fault Fault VST IST(PD) Figure 13 Block Diagram ST pin 7.1 Diagnosis Selector If the status pin is unconnected or connected to GND via a high ohmic resistor (VST to be below VST(L)), the ST pin acts as diagnosis output pin. In normal operation (device is activated) the ST pin is pulled to GND via the internal pull down current IST(PD). In case of an open load or short circuit to GND condition the ST pin is switched to VST(OL/SC) after the open load or short circuit detection filter time (Pos. 8.3.9, Pos. 8.3.12). If the device is operated in PWM operation via the VS and/or EN pins the ST pin should be connected to GND via a high ohmic resistor (e.g. 470kΩ) to ensure proper device behavior during fast rising VS and/or EN slopes. If the ST pin is shorted to GND the diagnostic feedback is performed via the IN_SET-pin, which is shown in Chapter 6.2 and Chapter 8. 7.2 Diagnosis Output If the status pin is unconnected or connected to GND via a high ohmic resistor (VST to be below VST(L)), it acts as a diagnostic output. In case of a fault condition the ST pin rises its voltage to VST(OL/SC) (Pos. 8.3.7). Details are shown in Chapter 8. 7.3 Disable Input If an external voltage higher than VST(H) (Pos. 8.3.5) is applied to the ST pin, the device is switched off. This function is used for applications, where multiple drivers should be used for one light function. It is possible to combine the drivers’ fault diagnosis via the ST pins. If a single LED chain fails, the entire light function is switched off. In this scenario e.g. the diagnostic circuit on the body control module can easily distinguish between the two cases (normal load or load fault), because nearly no current is flowing into the LED module during the fault scenario - the drivers consume a current of IS(fault,STu) (Pos. 5.4.5) or IS(dis,ST) (Pos. 5.4.3). As soon as one LED chain fails, the ST-pin of this device is switched to VST(OL/SC). The other devices used for the same light function can be connected together via the ST pins. This leads to a switch off of all devices connected together. Application examples are shown in Chapter 10. Data Sheet 18 Rev. 1.0, 2013-08-08 TLD1121EL ST Pin V ST IOU T tON (ST) tOFF( ST) t 100% 80% 20% t Figure 14 Data Sheet Switching times via ST Pin 19 Rev. 1.0, 2013-08-08 TLD1121EL Load Diagnosis 8 Load Diagnosis 8.1 Open Load An open load diagnosis feature is integrated in the TLD1121EL driver IC. If there is an open load on the output, the output is turned off. The potential on the IN_SET pin rises up to VIN_SET(OL/SC). This high voltage can be used as input signal for an µC as shown in Figure 9. The open load status is not latched, as soon as the open load condition is no longer present, the output stage will be turned on again. An open load condition is detected, if the voltage drop over the output stage VPS is below the threshold according Pos. 8.3.10 and a filter time of tOL is passed. V IN_ SET VIN _SET( OL /SC) VIN_ SET( ref ) tOL tIN _SET (re se t) VOU T t VS V S – VPS(OL ) VF open load occurs open load disappears t Figure 15 Data Sheet IN_SET behavior during open load condition with ST pin connected to GND 20 Rev. 1.0, 2013-08-08 TLD1121EL Load Diagnosis VIN _SET VIN _SET( ref ) t VST V ST( OL /SC) tOL tIN_ SET(re se t) VOU T t VS VS – VPS( OL) VF open load occurs open load disappears t Figure 16 IN_SET and ST behavior during open load condition (ST unconnected) 8.2 Short Circuit to GND detection The TLD1121EL has an integrated SC to GND detection. If the output stage is turned on and the voltage at the output falls below VOUT(SC) the potential on the IN_SET pin is increased up to VIN_SET(OL/SC) after tSC, if the ST pin is connected to GND. If the ST is open or connected to GND via a high ohmic resistor the fault is indicated on the ST pin according to Chapter 7 after tSC. More details are shown in Figure 18. This condition is not latched. For detecting a normal condition after a short circuit detection an output current according to IOUT(SC) is driven by the channel. Data Sheet 21 Rev. 1.0, 2013-08-08 TLD1121EL Load Diagnosis VIN _SET VIN _SET( OL /SC) VIN _SET (ref ) VOU T tSC t tIN_ SET( re se t) VF VOUT (SC) t short circuit occurs short circuit disappears IN_SET behavior during short circuit to GND condition with ST connected to GND and VDEN > Figure 17 VDEN(act) V IN_ SET V IN_ SET(ref ) t V ST VST (OL /SC) V OU T tSC tIN _SET (re se t) t VF V OUT (SC) t short circuit occurs short circuit disappears Figure 18 IN_SET and ST behavior during short circuit to GND condition (ST unconnected) Data Sheet 22 Rev. 1.0, 2013-08-08 TLD1121EL Load Diagnosis 8.3 Electrical Characteristics IN_SET Pin and Load Diagnosis Electrical Characteristics IN_SET pin and Load Diagnosis Unless otherwise specified: VS = 5.5 V to 40 V, Tj = -40 °C to +150 °C, RSET = 12 kΩ, all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions 1) Min. Typ. Max. 1.19 1.23 1.27 V 8.3.1 IN_SET reference voltage VIN_SET(ref) 8.3.2 IN_SET open load/short circuit voltage VIN_SET(OL/SC) 4 – 5.5 V 8.3.3 IN_SET open load/short circuit current IIN_SET(OL/SC) 1.5 – 7.4 mA VOUT = 3.6 V Tj = 25...115 °C 1) VS > 8 V Tj = 25...150 °C VS = VOUT (OL) or VOUTx = 0 V (SC) 1) VS > 8 V Tj = 25...150 °C VIN_SET = 4 V VS = VOUT (OL) or VOUT = 0 V (SC) 8.3.4 ST device turn on threshold (active low) in case of voltage applied from external (ST-pin acting as input) VST(L) 0.8 – – V – 8.3.5 ST device turn off threshold (active low) in case of voltage applied from external (ST-pin acting as input) VST(H) – – 2.5 V – 8.3.6 ST pull down current IST(PD) – – 15 µA 8.3.7 ST open load/short circuit voltage (ST-pin acting as diagnosis output) VST(OL/SC) 4 – 5.5 V VEN = 5.5 V VST= 0.8 V 1) VS > 8 V Tj = 25...150 °C RST = 470 kΩ VS = VOUT (OL) or VOUT = 0 V (SC) 8.3.8 ST open load/short circuit current (ST-pin acting as diagnosis output) IST(OL/SC) 100 – 220 µA 1) VS > 8 V Tj = 25...150 °C VST = 2.5 V VS = VOUT (OL) or VOUT = 0 V (SC) 8.3.9 8.3.10 OL detection filter time OL detection voltage VPS(OL) = VS - VOUT tOL VPS(OL) 10 22 35 µs 1) 0.2 – 0.4 V VS > 8 V VS > 8 V 8.3.11 Short circuit to GND detection threshold VOUT(SC) 0.8 – 1.4 V VS > 8 V 8.3.12 SC detection filter time tSC 10 22 35 µs 1) Data Sheet 23 VS > 8 V Rev. 1.0, 2013-08-08 TLD1121EL Load Diagnosis Electrical Characteristics IN_SET pin and Load Diagnosis (cont’d) Unless otherwise specified: VS = 5.5 V to 40 V, Tj = -40 °C to +150 °C, RSET = 12 kΩ, all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol 8.3.13 IN_SET diagnosis reset time tIN_SET(reset) 8.3.14 Limit Values Unit Conditions Min. Typ. Max. – 5 20 µs 1) SC detection current in IOUT(SC,STu) case of unconnected STpin 100 200 300 µA VS > 8 V VOUT= 0 V 8.3.15 SC detection current in IOUT(SC,STG) case of ST-pin shorted to GND 0.1 2 4.75 mA VS > 8 V VOUT= 0 V VST = 0 V 8.3.16 IN_SET activation IIN_SET(act) current without turn on of output stage 2 – 15 µA See Figure 11 VS > 8 V 1) Not subject to production test, specified by design Data Sheet 24 Rev. 1.0, 2013-08-08 TLD1121EL Power Stage 9 Power Stage The output stage is realized as high side current source with a current of 360 mA. During off state the leakage current at the output stage is minimized in order to prevent a slightly glowing LED. The maximum current of the channel is limited by the power dissipation and used PCB cooling areas (which results in the applications RthJA). For an operating current control loop the supply and output voltages according to the following parameters have to be considered: • • • Required supply voltage for current control VS(CC), Pos. 5.4.9 Voltage drop over output stage during current control VPS(CC), Pos. 9.2.6 Required output voltage for current control VOUT(CC), Pos. 9.2.7 9.1 Protection The device provides embedded protective functions, which are designed to prevent IC destruction under fault conditions described in this data sheet. Fault conditions are considered as “outside” normal operating range. Protective functions are neither designed for continuous nor for repetitive operation. 9.1.1 Over Load Behavior An over load detection circuit is integrated in the Basic LED Driver IC. It is realized by a temperature monitoring of the output stage (OUT). As soon as the junction temperature exceeds the current reduction temperature threshold Tj(CRT) the output current will be reduced by the device by reducing the IN_SET reference voltage VIN_SET(ref). This feature avoids LED’s flickering during static output overload conditions. Furthermore, it protects LEDs against over temperature, which are mounted thermally close to the device. If the device temperature still increases, the output current decreases close to 0 A. As soon as the device cools down the output current rises again. IOU T V IN_ SET Tj (C R T) Figure 19 Tj Output current reduction at high temperature Note: This high temperature output current reduction is realized by reducing the IN_SET reference voltage voltage (Pos. 8.3.1). In case of very high power loss applied to the device and very high junction temperature the output current may drop down to IOUT = 0 mA, after a slight cooling down the current increases again. 9.1.2 Reverse Battery Protection The TLD1121EL has an integrated reverse battery protection feature. This feature protects the driver IC itself, but also connected LEDs. The output reverse current is limited to IOUTx(rev) by the reverse battery protection. Data Sheet 25 Rev. 1.0, 2013-08-08 TLD1121EL Power Stage Note: Due to the reverse battery protection a reverse protection diode for the light module may be obsolete. In case of high ISO-pulse requirements and only minor protecting components like capacitors a reverse protection diode may be reasonable. The external protection circuit needs to be verified in the application. 9.2 Electrical Characteristics Power Stage Electrical Characteristics Power Stage Unless otherwise specified: VS = 5.5 V to 18 V, Tj = -40 °C to +150 °C, VOUT = 3.6 V, all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. 9.2.1 Output leakage current Typ. Unit Conditions µA VEN = 5.5 V IIN_SET = 0 µA VOUT = 2.5 V Tj = 150 °C 1) Tj = 85 °C 1) VEN = 5.5 V IIN_SET = 0 µA VOUT = VS = 40 V 1) VS = -16 V Max. IOUT(leak) – – – – 21 9 9.2.2 Output leakage current in boost over battery setup -IOUT(leak,B2B) – – 150 µA 9.2.3 Reverse output current -IOUT(rev) – 3 µA – Output load: LED with break down voltage < - 0.6 V 9.2.4 9.2.5 Output current accuracy limited temperature range Output current accuracy over temperature 1) kLT 2092 1800 2250 2250 2408 2700 1980 1710 2250 2250 2520 2790 kALL 9.2.6 Voltage drop over power VPS(CC) stage during current control VPS(CC) = VS - VOUT 0.75 – – V 9.2.7 Required output voltage for VOUT(CC) current control 2.3 – – V 9.2.8 Maximum output current IOUT(max) 360 – – mA Tj = 25...115 °C VS = 8...18 V VPS = 2 V RSET = 12 kΩ RSET = 30 kΩ 1) Tj = -40...115 °C VS = 8...18 V VPS = 2 V RSET = 6...12 kΩ RSET = 30 kΩ 1) VS = 13.5 V RSET = 12 kΩ IOUT ≥ 90% of (kLT(typ)/RSET) 1) VS = 13.5 V RSET = 12 kΩ IOUT ≥ 90% of (kLT(typ)/RSET) RSET = 4.7 kΩ The maximum output current is limited by the thermal conditions. Please refer to Pos. 4.3.1 - Pos. 4.3.3 Data Sheet 26 Rev. 1.0, 2013-08-08 TLD1121EL Power Stage Electrical Characteristics Power Stage (cont’d) Unless otherwise specified: VS = 5.5 V to 18 V, Tj = -40 °C to +150 °C, VOUT = 3.6 V, all voltages with respect to ground, positive current flowing into pin for input pins (I), positive currents flowing out of the I/O and output pins (O) (unless otherwise specified) Pos. Parameter Symbol 9.2.9 ST turn on time tON(ST) Limit Values Min. Typ. Max. – – 15 Unit Conditions µs 2) VS = 13.5 V RSET = 12 kΩ ST → L 9.2.10 ST turn off time tOFF(ST) – – 10 µs IOUT = 80% of (kLT(typ)/RSET) 2) VS = 13.5 V RSET = 12 kΩ ST → H 9.2.11 IN_SET turn on time tON(IN_SET) – – 15 µs 9.2.12 IN_SET turn off time tOFF(IN_SET) – – 10 µs 9.2.13 VS turn on time tON(VS) – – 20 µs 9.2.14 Current reduction temperature threshold Tj(CRT) – 140 – °C 9.2.15 Output current during current reduction at high temperature IOUT(CRT) 85% of – (kLT(typ)/ RSET) – A IOUT = 20% of (kLT(typ)/RSET) VS = 13.5 V IIN_SET = 0 → 100 µA IOUT = 80% of (kLT(typ)/RSET) VS = 13.5 V IIN_SET = 100 → 0 µA IOUT = 20% of (kLT(typ)/RSET) 1) 3) VEN = 5.5 V RSET = 12 kΩ VS = 0 → 13.5 V IOUT = 80% of (kLT(typ)/RSET) 1) IOUT = 95% of (kLT(typ)/RSET) 1) RSET = 12 kΩ Tj = 150 °C 1) Not subject to production test, specified by design 2) see also Figure 14 3) see also Figure 6 Data Sheet 27 Rev. 1.0, 2013-08-08 TLD1121EL Application Information 10 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Light module VBATT Cmo d=2.2µF C VS=4.7nF VS 10kΩ OUT ISO-Pulse protection circuit depending on requirements Microcontroller (e.g. XC866) OUT Internal supply EN Thermal protection Output control 4.7nF** OUT R SET IN_SET Current adjust Basic LED Driver Status ST GNDS GND IN Eventually to other Basic LED Driver 470kΩ * * In case PWM via VS or EN is performed. ** For EMI improvement, if required, ≈10nF Figure 20 Application Diagram Note: This is a very simplified example of an application circuit. In case of high ISO-pulse requirements a reverse protection diode may be used for LED protection. The function must be verified in the real application. 10.1 • Further Application Information For further information you may contact http://www.infineon.com/ Data Sheet 28 Rev. 1.0, 2013-08-08 TLD1121EL Package Outlines 11 Package Outlines 0.19 +0.06 0.08 C 0.15 M C A-B D 14x 0.64 ±0.25 1 8 1 7 0.2 M D 8x Bottom View 3 ±0.2 A 14 6 ±0.2 D Exposed Diepad B 0.1 C A-B 2x 14 7 8 2.65 ±0.2 0.25 ±0.05 2) 0.1 C D 8˚ MAX. C 0.65 3.9 ±0.11) 1.7 MAX. Stand Off (1.45) 0 ... 0.1 0.35 x 45˚ 4.9 ±0.11) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion Dimensions in mm PG-SSOP-14-1,-2,-3-PO V02 Figure 21 PG-SSOP14 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 29 Rev. 1.0, 2013-08-08 TLD1121EL Revision History 12 Revision History Revision Date Changes 1.0 2013-08-08 Inital revision of data sheet Data Sheet 30 Rev. 1.0, 2013-08-08 Edition 2013-08-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.