Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com (–)50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Large current capacity and wide ASO • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)60 V (--)50 V (--)6 V Collector Current VEBO IC (--)4 A Collector Current (Pulse) ICP (--)6 A 1.5 W Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 10 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7516A-002 • Package : TO-126ML • JEITA, JEDEC : TO-126 • Minimum Packing Quantity : 200 pcs./bag 8.0 4.0 3.6 3.3 1.0 11.0 Marking B1143 D1683 RANK LOT No. RANK LOT No. 1.5 7.5 3.0 1.4 1.0 2SB1143S 2SB1143T 2SD1683S 2SD1683T 3.0 1.6 0.8 0.8 0.75 15.5 0.7 Electrical Connection 2 3 1.7 1 1 : Emitter 2 : Collector 3 : Base 2.4 4.8 2 3 2 3 TO-126ML 2SB1143 Semiconductor Components Industries, LLC, 2013 September, 2013 1 2SD1683 1 90512 TKIM/O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063-1/7 2SB1143 / 2SD1683 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A hFE1 VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)3A hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 100* max Unit (--)1 μA (--)1 μA 560* 40 150 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA MHz (39)25 IC=(--)2A, IB=(--)100mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage typ VCE=(--)10V, IC=(--)50mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings min V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. pF (--350)190 (--700)500 (--)0.94 (--)1.2 mV V (--)60 V (--)50 V (--)6 V (70)70 ns (450)650 ns (30)35 ns * : The 2SB1143/2SD1683 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 25Ω 50Ω + 100μF + 470μF VBE= --5V VCC=25V IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.) Ordering Information Package Shipping 2SB1143S Device TO-126ML 200pcs./bag 2SB1143T TO-126ML 200pcs./bag 2SD1683S TO-126ML 200pcs./bag 2SD1683T TO-126ML 200pcs./bag memo Pb Free No.2063-2/7 2SB1143 / 2SD1683 IC -- VCE --5 IC -- VCE 5 2SB1143 2SD1683 A 100m 80mA 60mA mA --4 mA --50mA --3 --20mA --2 --10mA --1 0 --5mA IB=0mA 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V mA A 20mA 2 10mA 5mA 1 IB=0mA 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V ITR09048 IC -- VCE 2.0 2SD1683 8mA 7mA --10mA --1.6 40mA 3 ITR09047 2SB1143 --12m --14 4 0 --2.0 IC -- VCE --2.0 Collector Current, IC -- A Collector Current, IC -- A --100 Collector Current, IC -- A Collector Current, IC -- A 0 --20 --8mA --6mA --1.2 --4mA --0.8 --2mA --0.4 1.6 6mA 5mA 1.2 4mA 0.8 3mA 2mA 0.4 1mA 0 IB=0mA 0 --4 --8 --12 --16 0 --20 IB=0mA 0 IC -- VBE --2.4 --1.6 0 --0.2 --0.4 --0.6 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 7 2.4 1.6 5 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR09053 1.4 ITR09052 Ta=75°C 25°C --25°C 7 5 2 2 1.2 2SD1683 VCE=2V 100 2 7 --0.1 1.0 2 3 5 0.8 hFE -- IC 3 3 3 0.6 5 7 2 0.4 Base-to-Emitter Voltage, VBE -- V 7 Ta=75°C 25°C --25°C 7 --0.01 0.2 1000 100 10 0 ITR09051 DC Current Gain, hFE DC Current Gain, hFE 5 2 3.2 0 --1.4 2SB1143 VCE= --2V 3 2SD1683 VCE=2V 0.8 --0.8 20 Ta= 75 25° °C C --25 °C Collector Current, IC -- A --3.2 0 16 4.0 Ta= 75 25° °C --25 C °C Collector Current, IC -- A --4.0 12 IC -- VBE 4.8 2SB1143 VCE= --2V --0.8 8 Collector-to-Emitter Voltage, VCE -- V ITR09050 Collector-to-Emitter Voltage, VCE -- V ITR09049 --4.8 4 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR09054 No.2063-3/7 2SB1143 / 2SD1683 f T -- IC 1000 5 3 2SD 168 2 3 2SB 1143 100 7 5 3 2 10 0.01 For PNP, the minus sign is omitted. 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A --1000 7 5 3 2 --100 25°C 7 5 Ta= 3 --25°C 75°C 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 For PNP, the minus sign is omitted. 2 3 5 2 10 3 2 25°C 7 75°C 5 7 100 ITR09056 2SD1642 IC / IB=20 3 2 1000 7 5 3 2 100 7 5 25°C Ta=75°C 3 --25°C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A VBE(sat) -- IC 2 3 5 ITR09058 2SD1683 IC / IB=20 7 3 Ta= --25°C 7 VCE(sat) -- IC 10 5 5 2 10 5 2SB1143 IC / IB=20 --1.0 3 ITR09057 VBE(sat) -- IC --10 2SB1 143 2SD 168 3 5 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 7 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 100 5 2SB1143 IC / IB=20 3 2 10 1.0 5 7 10 ITR09055 VCE(sat) -- IC 5 2SB1143 / 2SD1683 f=1MHz 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 7 Cob -- VCB 5 2SB1143 / 2SD1683 VCE=10V 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 2 3 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 0.1 5 ms DC DC s 0m era 1.0 7 5 tio nT c= 25 °C op era tio nT a= 3 25 °C 2 0.1 7 5 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 5 7 1.0 2 3 5 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09061 7 0.1 2 3 5 7 1.0 2 3 5 ITR09060 PC -- Ta 12 op 2 2 Collector Current, IC -- A 2SB1143 / 2SD1683 1m s 10 IC=4A 3 10 7 0.01 ITR09059 Collector Dissipation, PC -- W ICP=6A 7 5 Collector Current, IC -- A 3 ASO 10 3 2 2 2SB1143 / 2SD1683 10 8 6 4 2 1.5 0 No heat si nk 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09062 No.2063-4/7 2SB1143 / 2SD1683 Bag Packing Specification 2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T No.2063-5/7 2SB1143 / 2SD1683 Outline Drawing 2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T Mass (g) Unit 0.97 mm * For reference No.2063-6/7 2SB1143 / 2SD1683 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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