NCS2003, NCV2003 Low Voltage, Rail-to-Rail Output Operational Amplifier The NCS2003/NCV2003 is a low voltage operational amplifier with rail−to−rail output drive capability. The 1.8 V operation allows high performance operation in low voltage, low power applications. Additional features include no output phase reversal with overdriven inputs, a low input offset voltage of 0.5 mV, ultra low input bias current of 1 pA, and a unity gain bandwidth of 5 MHz at 1.8 V. The tiny NCS2003 is the ideal solution for small portable electronic applications and is available in the space saving SOT23−5 and SOT−553 packages. The NCV2003 is available in SOT23−5 and is AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 5 1 SOT23−5 CASE 483−02 (NCS/NCV2003) MARKING DIAGRAMS Features • • • • • • • • • 7 MHz Unity Gain Bandwidth at 5 V 5 MHz Unity Gain Bandwidth at 1.8 V Rail−to−Rail Output No Output Phase Reversal for Over−Driven Input Signals Low Offset Voltage − 500 mV typical Low Input Bias Current – 1 pA typical Space saving SOT23−5 and SOT553−5 Packages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 5 AN3YWG G A3M 1 AN3 A3 Y W M G = = = = = = NCS/NCV2003SN2T1G NCS2003XV53T2G Year Work Week Date Code Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS Typical Applications • • • • • SOT553, 5 LEAD CASE 463B (NCS2003) Cellular Telephones Current Shunt Monitors for battery monitoring Pulse Oximetry Signal Conditioning Blood Pressure Monitor Conditioning and Filtering Hard Drive Sensor Buffer VOUT 1 VSS 2 IN+ 3 + − 5 VDD 4 IN− SOT23−5 IN+ 1 VSS 2 IN− 3 + − 5 VDD 4 OUT SOT553−5 ORDERING INFORMATION This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 2 1 See detailed ordering and shipping information on page 8 of this data sheet. Publication Order Number: NCS2003/D NCS2003, NCV2003 ABSOLUTE MAXIMUM RATINGS Over operating free−air temperature, unless otherwise stated Parameter Symbol Limit Unit VS 7 V Input Voltage (Note 1) VIN VSS − 300 mV to 7.0 V V Input Current IIN 10 mA IOSC 100 mA Storage Temperature TSTG −65 to 150 °C Junction Temperature TJ 150 °C Human Body Model HBM 2000 V Machine Model MM 200 V Supply Voltage (VDD − VSS) INPUT AND OUTPUT PINS Output Short Circuit Current (Note 2) TEMPERATURE ESD RATINGS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Neither input should exceed the range of VSS − 300 mV to 7.0 V 2. Indefinite duration; however, maximum package power dissipation limits must be observed to ensure that the maximum junction temperature is not exceeded. THERMAL INFORMATION (Note 3) Thermal Metric Junction to Ambient − SOT23−5 Junction to Ambient − SOT553−5 3. As mounted on an 80 x 80 x 1.5 mm FR4 PCB with 650 JESD/EIA 51.1, 51.2, 51.3 test guidelines. mm2 Symbol Limit Unit qJA 235 °C/W qJA 250 °C/W and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC OPERATING CONDITIONS Parameter Operating Supply Voltage Specified Operating Range NCS2003 NCV2003 http://onsemi.com 2 Symbol Limit Unit VS 1.7 to 5.5 V TA −40 to +85 −40 to +125 °C NCS2003, NCV2003 ELECTRICAL CHARACTERISTICS: VS = +1.8 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = –40°C to +85°C (NCS2003), TA = –40°C to +125°C (NCV2003). Guaranteed by design and/or characterization. Parameter Symbol Conditions Min Typ Max Unit 0.5 4.0 mV INPUT CHARACTERISTICS Offset Voltage VOS 5.0 Offset Voltage Drift DV/DT 2.0 mV/°C Input Bias Current IIB 1 pA Input Offset Current IOS 1 pA Differential Input Resistance RIN >1 TW Differential Input Capacitance CIN Input Common Mode Range VICR Common Mode Rejection Ratio CMRR 1.2 Inferred from CMRR VSS VIN = 0 V to VDD – 0.6 V 70 VIN = 0.2 V to VDD – 0.6 V 65 pF VDD − 0.6 V 80 dB 1.798 V OUTPUT CHARACTERISTICS Output Voltage High VOH VID = +0.5 V, RL = 10 kW 1.75 1.75 VID = +0.5 V, RL = 2 kW 1.7 1.78 1.7 Output Voltage Low VOL 7.0 VID = −0.5 V, RL = 10 kW 50 mV 50 20 VID = −0.5 V, RL = 2 kW 100 100 Short Circuit Current ISC VID = +0.5 V, VO = VSS, Sourcing 5.0 8.0 VID = −0.5 V, VO = VDD, Sinking 10 14 mA NOISE PERFORMANCE Voltage Noise Density eN f = 1 kHz 20 nV/√Hz Current Noise Density iN f = 1 kHz 0.1 pA/√Hz 92 dB 92 dB DYNAMIC PERFORMANCE Open Loop Voltage Gain AVOL 80 RL = 10 kW 75 RL = 2 kW 70 Gain Bandwidth Product 5 MHz Gain Margin AM RL = 10 kW, CL = 5 pF 12 dB Phase Margin yM RL = 10 kW, CL = 5 pF 53 ° Slew Rate SR Positive Slope, RL = 2 k, AV = +1 6 V/ms Negative Slope, RL = 2 k, AV = +1 9 V/ms VO = 1 Vpp, RL = 2 kW, AV = +1, 1 kHz 0.015 % VO = 1 Vpp, RL = 2 kW, AV = +1, 10 kHz 0.025 % 80 dB Total Harmonic Distortion + Noise GBWP THD+N POWER SUPPLY Power Supply Rejection Ratio 72 PSRR 65 Quiescent Current ICC 230 No Load http://onsemi.com 3 560 mA 1 mA NCS2003, NCV2003 ELECTRICAL CHARACTERISTICS: VS = +5.0 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = –40°C to +85°C (NCS2003), TA = –40°C to +125°C (NCV2003). Guaranteed by design and/or characterization. Parameter Symbol Conditions Min Typ Max Unit 0.5 4.0 mV INPUT CHARACTERISTICS Offset Voltage VOS 5.0 Offset Voltage Drift DV/DT 2.0 mV/°C Input Bias Current IIB 1 pA Input Offset Current IOS 1 pA Differential Input Resistance RIN >1 TW Differential Input Capacitance CIN Input Common Mode Range VICR Common Mode Rejection Ratio CMRR 1.2 Inferred from CMRR VSS VIN = 0 V to VDD – 0.6 V 65 VIN = 0.2 V to VDD – 0.6 V 63 pF VDD − 0.6 V 70 dB 4.99 V OUTPUT CHARACTERISTICS Output Voltage High VOH VID = +0.5 V, RL = 10 kW 4.95 4.95 VID = +0.5 V, RL = 2 kW 4.9 4.97 4.9 Output Voltage Low VOL 8.0 VID = −0.5 V, RL = 10 kW 50 mV 50 24 VID = −0.5 V, RL = 2 kW 100 100 Short Circuit Current ISC VID = +0.5 V, VO = VSS, Sourcing 40 76 VID = −0.5 V, VO = VDD, Sinking 50 96 mA NOISE PERFORMANCE Voltage Noise Density eN f = 1 kHz 20 nV/√Hz Current Noise Density iN f = 1 kHz 0.2 pA/√Hz 92 dB 92 dB 7.0 MHz VO = 4Vpp, RL = 2 kW, AV = +1, 1 kHz 0.005 % VO = 4Vpp, RL = 2 kW, AV = +1, 10 kHz 0.01 % dB DYNAMIC PERFORMANCE Open Loop Voltage Gain AVOL RL = 10 kW 86 78 RL = 2 kW 83 78 Gain Bandwidth Product GBWP Total Harmonic Distortion + Noise THD+N Gain Margin AM RL = 10 kW, CL = 5 pF 9 Phase Margin yM RL = 10 kW, CL = 5 pF 64 ° Slew Rate SR Positive Slope, RL = 2 k, AV = +1 7 V/ms Negative Slope, RL = 2 k, AV = +1 14 V/ms 80 dB POWER SUPPLY Power Supply Rejection Ratio 72 PSRR 65 Quiescent Current ICC 300 No Load http://onsemi.com 4 660 mA 1 mA NCS2003, NCV2003 TYPICAL CHARACTERISTICS 600 700 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 600 +85°C 500 +125°C 400 +25°C 300 −40°C 200 100 500 400 300 VS = 1.8 V 200 100 No Load No Load 0 0 3 2 4 0 −50 5 −25 0 Figure 1. Quiescent Supply Current vs. Supply Voltage 18 16 14 12 10 +85°C +25°C 6 +125°C 4 2 0 0 1 2 3 4 1.4 1.2 +125°C 1 0.8 +85°C 0.6 −40°C 0.4 +25°C 0.2 VS = 1.8 V 0 5 0 VCM, COMMON MODE VOLTAGE (V) 0.5 HIGH LEVEL OUTPUT VOLTAGE (V) +125°C −40°C +25°C 0 5 10 15 1.8 0.2 0 10 20 LOW LEVEL OUTPUT CURRENT (mA) 0.4 0.1 5 Figure 4. Low Level Output Voltage vs. Output Current @ VS = 1.8 V VS = 5 V +85°C 125 1.6 Figure 3. Input Offset Current vs. VCM 0.3 100 1.8 VS = 5 V −40°C 75 Figure 2. Quiescent Supply Current vs. Temperature LOW LEVEL OUTPUT VOLTAGE (V) INPUT OFFSET CURRENT (pA) 20 8 50 25 TEMPERATURE (°C) SUPPLY VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) VS = 5 V VS = 2.7 V 15 20 −40°C 1.6 VS = 1.8 V 1.4 1.2 +25°C 1 +85°C 0.8 0.6 0.4 +125°C 0.2 0 0 −2 −4 −6 −8 −10 LOW LEVEL OUTPUT CURRENT (mA) HIGH LEVEL OUTPUT CURRENT (mA) Figure 5. Low Level Output Voltage vs. Output Current @ VS = 5 V Figure 6. High Level Output Voltage vs. Output Current @ VS = 1.8 V http://onsemi.com 5 NCS2003, NCV2003 TYPICAL CHARACTERISTICS 140 VS = 5 V −40°C 4.9 100 +25°C 4.8 +85°C 4.7 60 +125°C 40 20 4.5 0 −4 −8 −12 −16 100 RL = 10 kW TA = 25°C 80 1k 10k 100k 1M −20 10 VS = 1.8 V CL = 5 pF TA = 25°C 100 60 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) Figure 10. Open Loop Gain and Phase vs. Frequency @ VS = 1.8 V 300 PHASE (°) 180 20 120 VS = 5 V CL = 5 pF TA = 25°C 100 60 1k 10k 100k 1M 10M VS = 1.8 V RL = 10 kW TA = 25°C 70 240 Phase 0 100M 80 360 PHASE MARGIN (°) Gain 240 120 Figure 9. CMRR vs. Frequency Gain − 2 kW Gain − 10 kW Phase − 2 kW Phase − 10 kW 300 PHASE (°) AVOL (dB) 100 360 180 Phase 20 0 VS = 1.8 V VS = 5 V 60 AVOL (dB) Gain 40 1M Gain − 10 kW Gain − 2 kW Phase − 10 kW Phase − 2 kW 60 100 −20 10 100k Figure 8. PSRR vs. Frequency 40 0 10k Figure 7. High Level Output Voltage vs. Output Current @ VS = 5 V 60 40 1k FREQUENCY (Hz) 80 80 100 HIGH LEVEL OUTPUT CURRENT (mA) 100 0 10 VS = 1.8 V VS = 5 V 0 10 −20 120 CMRR (dB) 80 4.6 20 RL = 10 kW TA = 25°C 120 PSRR (dB) HIGH LEVEL OUTPUT VOLTAGE (V) 5 60 50 40 30 20 10 0 0 100M 0 FREQUENCY (Hz) 50 100 150 200 CAPACITIVE LOAD (pF) Figure 11. Open Loop Gain and Phase vs. Frequency @ VS = 5 V Figure 12. Phase Margin vs. Capacitive Load http://onsemi.com 6 NCS2003, NCV2003 TYPICAL CHARACTERISTICS 120 VOLTAGE (mV) 100 VS = 1.8 V RL = 2 kW TA = 25°C 120 100 80 60 40 60 40 20 0 0 1800 1600 1400 0 20 40 −20 −20 60 60 TIME (ms) VS = 1.8 V RL = 2 kW TA = 25°C 1800 Output Input 1600 VOLTAGE (mV) 1400 600 400 Output Input VS = 1.8 V RL = 2 kW TA = 25°C 1200 1000 800 600 400 200 200 0 0 −200 −20 0 20 40 −200 −20 60 0 20 40 60 TIME (ms) TIME (ms) Figure 15. Inverting Large Signal Transient Response Figure 16. Non−Inverting Large Signal Transient Response VS = 5 V RL = 2 kW TA = 25°C 2 Output Input 1.5 1 VOLTAGE (V) 4 VOLTAGE (V) 40 Figure 14. Non−Inverting Small Signal Transient Response 800 3 2 1 VS = 1.8 V RL = 2 kW TA = 25°C Output Input 0.5 0 −0.5 −1 0 −1 −20 20 TIME (ms) 1000 5 0 Figure 13. Inverting Small Signal Transient Response 1200 6 Output Input VS = 1.8 V RL = 2 kW TA = 25°C 80 20 −20 −20 VOLTAGE (mV) 140 Output Input VOLTAGE (mV) 140 −1.5 0 20 40 −2 −2E−5 60 0E+0 2E−5 4E−5 6E−5 TIME (ms) TIME (ms) Figure 17. Non−Inverting Large Signal Transient Response Figure 18. Output Overload Recovery http://onsemi.com 7 NCS2003, NCV2003 TYPICAL CHARACTERISTICS THD+N (%) 1 140 RL = 2 kW AV = +1 TA = 25°C VOLTAGE NOISE (nV/√Hz) 10 VS = 1.8 V 0.1 VS = 5 V 0.01 0.001 10 100 1k 10k VS = 1.8 V VIN = VS/2 120 100 80 60 40 20 0 10 100k 100 1k 10k 100k FREQUENCY (Hz) Figure 19. THD+N vs. Frequency Figure 20. Input Voltage Noise vs. Frequency CURRENT NOISE DENSITY (pA/√Hz) FREQUENCY (Hz) 10 1 VS = 1.8 V VIN = VS/2 0.1 0.01 0.001 0.0001 0.00001 10 100 1k 10k 100k FREQUENCY (Hz) Figure 21. Noise Density vs. Frequency ORDERING INFORMATION Marking Package Shipping† NCS2003SN2T1G AN3 SOT23−5 (Pb−Free) 3000 / Tape and Reel NCV2003SN2T1G* (In Development) AN3 SOT23−5 (Pb−Free) 3000 / Tape and Reel NCS2003XV53T2G A3 SOT553−5 (Pb−Free) 4000 / Tape and Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 8 NCS2003, NCV2003 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE K 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 NCS2003, NCV2003 PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B ISSUE C D −X− 5 A 4 1 e 2 L E −Y− 3 b HE DIM A b c D E e L HE c 5 PL 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. M X Y MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.65 1.20 1.25 0.50 BSC 0.10 0.20 0.30 1.55 1.60 1.65 MIN 0.50 0.17 0.08 1.55 1.15 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.061 0.063 MIN 0.020 0.007 0.003 0.061 0.045 MAX 0.024 0.011 0.007 0.065 0.049 0.012 0.065 RECOMMENDED SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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