A Product Line of Diodes Incorporated ZXMN6A11Z ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V(BR)DSS RDS(on) Max 60V 120mΩ @ VGS = 10V 180mΩ @ VGS = 4.5V • • • • • • • ID max TA = 25°C (Note 5) 3.6A 2.9A Low On-Resistance Low Threshold Fast Switching Speed Low Gate Drive Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • DC-DC Converters • Power Management functions • Motor control • Disconnect switches • • • SOT89 Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.052 grams (approximate) D G S Device symbol Top View Top View Pin-Out Ordering Information (Note 3) Product ZXMN6A11ZTA Notes: Marking 11N6 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 11N6 ZXMN6A11Z Document number DS33557 Rev. 4 - 2 11N6 = Product type Marking Code 1 of 7 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11Z Characteristic Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Value 60 ±20 Unit V V ID 3.6 2.9 2.7 A IDM IS ISM 14.5 3.7 14.5 A A A Symbol Value 1.5 12 2.6 21 83.3 47.4 -55 to +150 Unit W mW/°C W mW/°C °C/W °C/W °C @ VGS = 10V ; TA = 25°C (Note 5) @ VGS = 10V ; TA = 75°C (Note 5) @ VGS = 10V ; TA = 25°C (Note 4) Steady State Continuous Drain Current Pulsed Drain Current (Note 6) Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) (Note 6) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Linear Derating Factor Power Dissipation (Note 5) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Notes: PD PD RθJA RθJA TJ, TSTG 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 5. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. 6. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature. Thermal Characteristics RDS(on) Max Power Dissipation (W) ID Drain Current (A) 10 1.50 Limited 1.25 1 1.00 DC 1s 0.75 100m 100ms 10ms 10m Single Pulse T amb=25°C 0.50 1ms 0.25 100µs 1 0.00 0 10 VDS Drain-Source Voltage (V) 20 Safe Operating Area 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 90 80 T amb=25°C Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified 70 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 10 1 100µ Pulse Width (s) Document number DS33557 Rev. 4 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMN6A11Z Single Pulse T amb=25°C 100 2 of 7 www.diodes.com Pulse Power Dissipation December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A11Z Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 1.0 100 V μA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1 RDS (ON) - Forward Transconductance (Note 7 & 9) Diodes Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance (Note 8 & 9) Output Capacitance (Note 8 & 9) Reverse Transfer Capacitance (Note 8 & 9) Gate Charge (Note 8 & 9) Total Gate Charge (Note 8 & 9) Gate-Source Charge (Note 8 & 9) Gate-Drain Charge (Note 8 & 9) Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) Turn-On Delay Time (Note 8 & 9) Turn-On Rise Time (Note 8 & 9) Turn-Off Delay Time (Note 8 & 9) Turn-Off Fall Time (Note 8 & 9) gFS VSD - 2.2 120 180 0.95 V Static Drain-Source On-Resistance (Note 7) 4.9 0.85 VDS = VGS, ID = 250μA VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2A VDS = 15V, ID = 2.5A TJ = 25°C, IS = 2.8A, VGS = 10V Ciss Coss Crss Qg Qg Qgs Qgd trr Qrr tD(on) tr tD(off) tf - 330 35.2 17.1 3 5.7 1.25 0.86 21.5 20.5 1.95 3.5 8.2 4.6 - Notes: - - mΩ S V pF pF pF nC nC nC nC ns nC ns ns ns ns Test Condition VDS = 40V, VGS = 0V, f = 1.0MHz VGS = 5V, VDS = 15V, ID = 2.5A VGS = 10V, VDS = 15V, ID = 2.5A TJ = 25°C, IS = 2.5A, di/dt = 100A/μs VGS = 10V, VDD = 30V, RG = 6Ω , ID = 2.5A 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. 8. Switching characteristics are independent of operating junction temperature. 9. For design aid only, not subject to production testing. ] ZXMN6A11Z Document number DS33557 Rev. 4 - 2 3 of 7 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics T = 150°C 10V 5V 10 ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 2.5V 4 5 VGS Gate-Source Voltage (V) Normalised RDS(on) and VGS(th) ID Drain Current (A) 0.1 1 4.5V VGS 5V 10V 0.1 T = 25°C 1 ID Drain Current (A) 10 On-Resistance v Drain Current ZXMN6A11Z Document number DS33557 Rev. 4 - 2 10 1.8 VGS = 10V 1.6 ID = 2.5A RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature ISD Reverse Drain Current (A) Typical Transfer Characteristics 4V 1 Output Characteristics T = 25°C 3.5V 2V VDS Drain-Source Voltage (V) 1 3V VGS 0.1 0.1 VDS = 10V 3 3V 1 10 T = 150°C 2 4V 3.5V Output Characteristics 10 10V 5V 10 VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance (W) ADVANCE INFORMATION ZXMN6A11Z 10 1 T = 150°C T = 25°C 0.1 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 4 of 7 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11Z VGS = 0V 400 f = 1MHz 300 CISS COSS 200 CRSS 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 VGS Gate-Source Voltage (V) 500 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics - Continued ID = 2.5A 8 6 VDS = 30V 4 2 0 0 1 2 3 4 Q - Charge (nC) 5 6 Gate-Source Voltage v Gate Charge Test Circuits ZXMN6A11Z Document number DS33557 Rev. 4 - 2 5 of 7 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A11Z Package Outline Dimensions R0 D1 .2 00 C E H L B e B1 e1 8° (4 X ) A SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm D Suggested Pad Layout X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X2 (2x) Y1 Y3 Y4 Y2 Y C X (3x) ZXMN6A11Z Document number DS33557 Rev. 4 - 2 6 of 7 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A11Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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