A Product Line of Diodes Incorporated ZXTD718MC DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • • • BVCEO > -20V; IC = -3.5A Continuous Collector Current RSAT = 64 mΩ for Low Equivalent On Resistance Low Saturation Voltage (-220mV @ -1A) hFE characterized up to -6A for high current gain holds up Dual NPN saving footprint and component count Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3020B-8 Case material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Terminals: Pre-Plated NiPdAu leadframe. Nominal package height: 0.8mm Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) Applications • • • • • • Battery charging circuits Load disconnect switches DC-DC converters Motor drive LED backlighting circuits Portable applications C2 DFN3020B-8 B2 C1 B1 Bottom View E1 PNP Transistor C2 C1 C2 E2 Top View C2 PNP Transistor E2 C1 C1 B2 E1 B1 Pin 1 Bottom View Pin Out Equivalent Circuit Ordering Information (Note 3) Product ZXTD718MCTA Notes: Marking D22 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For Packaging Details, go to our website at http://www.diodes.com. Marking Information D22 ZXTD718MC Document Number DS32000 Rev. 2 - 2 D22 = Product type Marking Code Top view, dot denotes Pin 1 1 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD718MC Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 4 and 7) Base Current Symbol VCBO VCEO VEBO ICM IC IB Limit -25 -20 -7 -6 -3.5 -1 Unit V A Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol (Notes 4 & 7) Power Dissipation Linear Derating Factor (Notes 5 & 7) PD (Notes 6 & 7) (Notes 6 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 4 & 7) (Notes 5 & 7) (Notes 6 & 7) (Notes 6 & 8) (Notes 7 & 9) RθJA RθJL TJ, TSTG Value 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit W mW/°C °C/W °C 2 4. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec. 6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXTD718MC Document Number DS32000 Rev. 2 - 2 2 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD718MC Thermal Characteristics 10 2.0 Max Power Dissipation (W) IC Collector Current (A) VCE(SAT) Limited 1 DC 1s 100ms 0.1 10ms 8sqcm 2oz Cu One active die 0.01 1ms 100us Single Pulse, T amb=25°C 0.1 1 10 VCE Collector-Emitter Voltage (V) T amb=25°C 10sqcm 1oz Cu Two active die 1.5 8sqcm 2oz Cu One active die 1.0 0.5 10sqcm 1oz Cu One active die 0.0 0 25 50 75 100 125 150 Temperature (°C) Derating Curve Safe Operating Area 80 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Thermal Resistance (°C/W) Thermal Resistance (°C/W) 225 8sqcm 2oz Cu One active die 1oz Cu One active die 200 175 1oz Cu Two active die 150 125 100 75 50 2oz Cu One active die 2oz Cu Two active die 25 0 0.1 Pulse Width (s) 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area Transient Thermal Impedance 3.5 PD Dissipation (W) T amb=25°C 2oz Cu Two active die 3.0 T =150°C j max 2.5 Continuous 2.0 2oz Cu One active die 1.5 1.0 0.5 0.0 0.1 1oz Cu Two active die 1oz Cu One active die 1 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ZXTD718MC Document Number DS32000 Rev. 2 - 2 3 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD718MC Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Collector-Emitter Saturation Voltage (Note 10) VCE(sat) Base-Emitter Turn-On Voltage (Note 10) Base-Emitter Saturation Voltage (Note 10) Output Capacitance VBE(on) VBE(sat) Cobo Min -25 -20 -7 300 300 150 15 - Static Forward Current Transfer Ratio (Note 10) hFE Transition Frequency fT 150 Turn-On Time ton - 40 - ns VCC = -10V, IC = 1A Turn-Off Time toff - 670 - ns IB1 = IB2 = 20mA Notes: Typ -35 -25 8.5 475 450 230 30 -19 -170 -190 -240 -225 -0.87 -1.01 21 Max -100 -100 -100 -30 -220 -250 -350 -300 -0.95 -1.12 30 Unit V V V nA nA nA 180 - MHz - mV V V pF Test Condition IC = -100µA IC = 10mA IE = -100µA VCB = -20V VEB = -6V VCES = -16V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = - 0.1A, IB = -10mA IC = -1A, IB = -20mA IC = -1.5A, IB = -50mA IC = -2.5A, IB = -150mA IC = -3.5A, IB = -350m IC = -3.5A, VCE = -2V IC = -3.5A, IB = -350mA VCB = 10V, f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% ZXTD718MC Document Number DS32000 Rev. 2 - 2 4 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD718MC Typical Electrical Characteristics 0.25 1 IC/IB=50 Tamb=25°C VCE(SAT) (V) VCE(SAT) (V) 0.20 100m IC/IB=100 IC/IB=50 10m IC/IB=10 1m 10m 100m 1 25°C 0.10 -55°C 0.05 0.00 1m 10 IC Collector Current (A) 100°C 0.15 10m 1.4 1.0 450 25°C 360 0.6 270 0.4 180 -55°C 0.2 0.0 1m 90 10m 100m 1 IC Collector Current (A) 1.0 0 10 VBE(SAT) (V) 540 Typical Gain (hFE) Normalised Gain VCE=2V 630 100°C 0.8 10 1 10 IC/IB=50 0.8 -55°C 0.6 25°C 100°C 0.4 1m hFE v IC 1.0 1 VCE(SAT) v IC VCE(SAT) v IC 1.2 100m IC Collector Current (A) 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V VBE(ON) (V) 0.8 -55°C 0.6 25°C 0.4 0.2 1m 100°C 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ZXTD718MC Document Number DS32000 Rev. 2 - 2 5 of 7 www.diodes.com January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD718MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTD718MC Document Number DS32000 Rev. 2 - 2 Dimensions C G G1 X X1 Y Y1 Y2 6 of 7 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 January 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD718MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com ZXTD718MC Document Number DS32000 Rev. 2 - 2 7 of 7 www.diodes.com January 2011 © Diodes Incorporated