zxtps720mc - Diodes Incorporated

A Product Line of
Diodes Incorporated
ZXTPS720MC
40V PNP LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Features and Benefits
Mechanical Data
PNP Transistor
•
BVCEO > -40V
•
IC = -3A Continuous Collector Current
•
Low Saturation Voltage (-220mV max @ -1A)
•
RSAT = 104mΩ for a low equivalent On-Resistance
•
hFE characterized up to -3A for high current gain hold up
•
•
•
•
•
•
•
Schottky Diode
•
BVR > 40V
•
IFAV = 3A Average Peak Forward Current
•
Low VF < 500mV (@1A) for reduced power loss
•
Fast switching due to Schottky barrier
•
•
•
•
•
•
Case: DFN3020B-8
Case Material: Molded Plastic, “Green” Molding Component
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.013 grams (approximate)
Applications
•
•
•
•
•
Low profile 0.8mm high package for thin applications
RθJA efficient, 40% lower than SOT26
2
6mm footprint, 50% smaller than TSOP6 and SOT26
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
DC – DC Converters
Charging circuits
Mobile phones
Motor control
Portable applications
C1
DFN3020B-8
K2
K2
B1
PNP Transistor
Bottom View
C1
K2
A2
E1
Top View
K2
A2
Schottky Diode
Equivalent Circuit
C1
C1
n/c
E1
B1
Pin 1
Bottom View
Pin-Out
n/c = Not Connected internally
Ordering Information (Note 3)
Product
ZXTPS720MCTA
Notes:
Marking
3S1
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
3S1
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
3S1 = Product type marking code
Top view, dot denotes pin 1
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A Product Line of
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ZXTPS720MC
PNP - Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
VCBO
VCEO
VEBO
ICM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
(Notes 4 and 7)
(Notes 5 and 7)
Base Current
IC
IB
Limit
-50
-40
-7
-4
-3
-3.4
-1
Unit
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
V
A
PNP - Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 4 & 7)
Power Dissipation
Linear Derating Factor
(Notes 5 & 7)
PD
(Notes 6 & 7)
(Notes 6 & 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Note 9)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2
4. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
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ZXTPS720MC
PNP - Thermal Characteristics
10
2.0
Max Power Dissipation (W)
IC Collector Current (A)
VCE(SAT)
Limited
1
DC
1s
100ms
0.1
10ms
8sqcm 2oz Cu
One active die
Single Pulse, Tamb=25°C
0.01
0.1
1ms
100us
1
10
VCE Collector-Emitter Voltage (V)
T amb=25°C
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
1.0
0.5
10sqcm 1oz Cu
One active die
0.0
0
25
50
75
100
125
150
Temperature (°C)
Derating Curve
Safe Operating Area
60
D=0.5
40
20
Single Pulse
D=0.2
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
225
8sqcm 2oz Cu
One active die
80
1oz Cu
One active die
200
175
1oz Cu
Two active die
150
125
100
75
50
25
0
0.1
Pulse Width (s)
2oz Cu
One active die
1
2oz Cu
Two active die
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Transient Thermal Impedance
3.5
PD Dissipation (W)
T amb=25°C
2oz Cu
Two active die
3.0 T =150°C
j max
2.5 Continuous
2.0
2oz Cu
One active die
1.5
1.0
0.5
1oz Cu
Two active die
1oz Cu
One active die
0.0
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
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ZXTPS720MC
Schottky - Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
VR
IF
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
D = 0.5
Pulse width ≤ 300µs
t ≤ 100µs
t ≤ 10ms
Limit
40
1.85
IFRM
3
IFSM
12
7
Unit
V
A
Schottky - Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 10 & 13)
Power Dissipation
Linear Derating Factor
(Notes 11 & 13)
PD
(Notes 12 & 13)
(Notes 12 & 14)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Maximum Junction Temperature
Notes:
(Notes 10 & 13)
(Notes 11 & 13)
(Notes 12 & 13)
(Notes 12 & 14)
(Note 15)
RθJA
RθJL
TSTG
TJ
Value
1.2
12
2
20
0.9
9
1.36
13.6
83.3
51.0
111
73.5
20.2
-55 to +150
125
Unit
W
mW/°C
°C/W
°C
10. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed cathode and collector pads connected to each half.
11. Same as note (10), except the device is measured at t <5 sec.
12. Same as note (10), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
13. For a dual device with one active die.
14. For dual device with 2 active die running at equal power.
15. Thermal resistance from junction to solder-point (on the exposed cathode pad).
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
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A Product Line of
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ZXTPS720MC
Schottky - Thermal Characteristics
80
60
D=0.5
40
20
Single Pulse
D=0.2
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.5
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
Two active die
8sqcm 2oz Cu
One active die
1.0
10sqcm 1oz Cu
One active die
0.5
0.0
0
Pulse Width (s)
100
125
Tj max=125°C
2oz Cu
Two active die
Continuous
2.0
2oz Cu
One active die
1.0
0.5
1oz Cu
One active die
0.0
0.1
1
1oz Cu
Two active die
10
100
Thermal Resistance (°C/W)
225
Tamb=25°C
PD Dissipation (W)
75
Derating Curve
3.0
1.5
50
Temperature (°C)
Transient Thermal Impedance
2.5
25
200
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
1oz Cu
Two active die
150
125
100
75
50
2oz Cu
One active die
2oz Cu
Two active die
25
0
0.1
Board Cu Area (sqcm)
Power Dissipation v Board Area
1oz Cu
One active die
175
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
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ZXTPS720MC
PNP - Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 16)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Collector-Emitter Saturation Voltage (Note 16)
VCE(sat)
Base-Emitter Turn-On Voltage (Note 16)
Base-Emitter Saturation Voltage (Note 16)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
Min
-50
-40
-7
300
300
180
60
12
-
Static Forward Current Transfer Ratio (Note 16)
hFE
Typ
-80
-70
-8.5
480
450
290
130
22
-25
-150
-195
-210
-260
-0.89
-0.97
19
Max
-100
-100
-100
-40
-220
-300
-300
-370
-0.95
-1.05
25
Unit
V
V
V
nA
nA
nA
Transition Frequency
fT
150
190
-
MHz
Turn-on Time
Turn-off Time
ton
toff
-
40
435
-
ns
ns
-
mV
V
V
pF
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -40V
VEB = -6V
VCES = -32V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -1.5A, VCE = -2V
IC = -3A, VCE = -2V
IC = -0.1A, IB = -10mA
IC = -1A, IB = -50mA
IC = -1.5A, IB = -100mA
IC = -2A, IB = -200mA
IC = -2.5A, IB = -250mA
IC = -2.5A, VCE = -2V
IC = -2.5A, IB = -250mA
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -15V, IC = -0.75A
IB1 = IB2 = -15mA
Schottky - Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 16)
VF
Reverse Current
Diode Capacitance
IR
CD
Min
40
-
Reverse Recovery Time
trr
-
Notes:
Symbol
BVR
Typ
60
240
265
305
355
390
425
495
420
50
25
Max
270
290
340
400
450
500
600
100
-
Unit
V
12
-
ns
mV
µA
pF
Test Condition
IR = -300µA
IF = 50mA
IF = 100mA
IF = 250mA
IF = 500mA
IF = 750mA
IF = 1000mA
IF = 1500mA
IF = 1000mA, TA = 100°C
VR = 30V
VR = 25V, f = 1MHz
switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
16. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
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ZXTPS720MC
PNP - Typical Electrical Characteristics
1
0.25
IC/IB=50
Tamb=25°C
VCE(SAT) (V)
VCE(SAT) (V)
0.20
100m I /I =100
C B
IC/IB=50
10m
1m
IC/IB=10
10m
100m
0.15
0.10
25°C
0.05
0.00
1m
1
IC Collector Current (A)
100°C
-55°C
10m
1.0
450
25°C
0.8
360
0.6
270
0.4
180
-55°C
0.2
0.0
1m
90
10m
100m
1.0
VBE(SAT) (V)
540
Typical Gain (hFE)
Normalised Gain
1.2
630
VCE=2V
100°C
-55°C
0.6
25°C
100°C
0.4
0
1
IC/IB=50
0.8
IC Collector Current (A)
hFE v IC
1.0
1
VCE(SAT) v IC
VCE(SAT) v IC
1.4
100m
IC Collector Current (A)
1m
10m
100m
IC Collector Current (A)
1
VBE(SAT) v IC
VCE=2V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
IC Collector Current (A)
VBE(ON) v IC
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
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ZXTPS720MC
Schottky - Typical Electrical Characteristics
IR - Reverse Current (A)
IF - Forward Current (A)
100m
1
+125°C
10m
100m
+85°C
1m
100µ
+125°C
+85°C
+25°C
0°C
-40°C
-55°C
10m
1m
0.0
0.2
0.4
+25°C
10µ
0°C
-40°C
-55°C
1µ
100n
10n
0.6
0
10
20
Foward Current (A)
IFRM - Repetitive Peak
8
6
4
PFAV - Average Forward Power (W)
Repetitive Rating
Rectangular
Pulse Width=300μs
D=
0.02
0.05
0.1
0.2
0.5
1
2
0
25
50
75
100
125
TA - Ambient Temp (°C)
50
1.2
1.0
D=
1
0.5
0.2
0.1
0.05
0.02
0.8
0.6
0.4
Repetitive Rating
Rectangular
Pulse Width=300μs
Tj = 125°C
0.2
0.0
0
2
4
6
8
10
12
14
16
IFRM - Repetitive Peak Foward Current (A)
IFRM v TA
PFAV v IFRM
125
200
Typical
Tj = 125°C
100
Rth(j-a)=
50°C/W
83°C/W
100°C/W
150°C/W
200°C/W
300°C/W
75
50
0
5
10
15
20
25
30
35
40
VR - Continuous Reverse Voltage (V)
CD - Diode Capacitance (pF)
TA - Ambient Temp (°C)
40
IR v VR
IF v VF
10
30
VR - Reverse Voltage (V)
VF - Forward Voltage (V)
150
125
100
TA v VR
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
f = 1MHz
175
75
50
25
0
100m
1
10
VR - Reverse Voltage (V)
CD v VR
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ZXTPS720MC
Package Outline Dimensions
A
DFN3020B-8
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
A3
A1
D
D4
D4
D2
E
E2
b
Z
e
L
Suggested Pad Layout
C
X
Y1
G1
G
Y2
Y
X1
ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
Dimensions
C
G
G1
X
X1
Y
Y1
Y2
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Value (in mm)
0.650
0.285
0.090
0.400
1.120
0.730
0.500
0.365
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS720MC
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2011, Diodes Incorporated
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ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
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