星合电子

US3ABF THRU US3MBF
Surface Mount Ultrafast Recovery Rectifier
Reverse Voltage – 50V~1000 V
Forward Current – 3.0 A
SMBF
Cathode Band
Top View
FEATURES
0.145(3.70)
0.137(3.50)
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
0.087(2.20)
0.075(1.90)
0.174(4.40)
0.166(4.20)
0.012(0.30)
0.006(0.15)
0.055(1.40)
0.043(1.10)
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 57mg / 0.002oz
0.217(5.50)
0.201(5.10)
Maximum Ratings and Electrical characteristics
Dimensions in inches and (millimeters)
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
Parameter
US3ABF US3BBF
US3DBF
US3GBF US3JBF
US3KBF US3MBF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
at Ta = 65 °C
I F(AV)
3
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
100
A
Maximum Instantaneous Forward Voltage at 3 A
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Ta = 25 °C
Ta =125 °C
1)
Maximum Reverse Recovery Time
2)
Typical Thermal Resistance 3)
Operating and Storage Temperature Range
1.3
1.0
1.6
V
IR
5
100
μA
Cj
75
pF
t rr
50
RθJA
75
ns
RθJL
55
16
°C/W
T j , T stg
-55 ~ +150
°C
1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
2 ) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
2
3)P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm ) copper pad areas.
1
US3ABF THRU US3MBF
Surface Mount Ultrafast Recovery Rectifier
Reverse Voltage – 50V~1000 V
Forward Current – 3.0 A
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t rr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
OSCILLOSCOPE
Note 1
NonInductive
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
3.5
300
100LFM
3.0
I R - Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
Lead
2.4
Ambient
1.8
1.2
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm ) pad areas.
0.6
100
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0.0
25
75
50
100
125
150
175
0
Ambient /Lead Temperature (°C)
Peak Forward Surage Current (A)
Instaneous Forward Current (A)
T J =25°C
pulse with 300μs
1% duty cycle
1.0
0.1
US3ABF~US3DBF
US3GBF
US3JBF~US3MBF
0.5
1.0
1.5
2.0
60
80
100
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
20
0.01
0.0
40
% of PIV.VOLTS
Fig.3 Typical Instaneous Forward
Characteristics
10
20
120
100
80
60
40
8.3 ms Single Half Sine Wave
(JEDEC Method)
20
00
1
2.5
Instaneous Forward Voltage (V)
10
Number of Cycles
2
100