桂林斯壯微電子有限責任公司

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
SS12 THRU SS110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 1.0 Ampere
FEATURES
DO-214AC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.110(2.80)
0.100(2.54)
0.067 (1.70)
0.051 (1.30)
0.181(4.60)
0.157(3.99)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
0.096(2.42)
0.078(1.98)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
Case: JEDEC DO-214AC molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.003 ounce, 0.093 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS12
SS13
SS14
SS15
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
50
35
50
SS16
SS18 SS110
60
42
60
80
56
80
100
70
100
UNITS
VOLTS
VOLTS
VOLTS
I(AV)
1.0
Amp
IFSM
30.0
Amps
VF
0.45
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1
0.85
0.5
IR
CJ
RθJA
TJ,
TSTG
0.70
0.55
10.0
5.0
90
110
88.0
-65 to +125
-65 to +150
-65 to +150
Volts
mA
pF
C/W
C
C
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
FIG. 1- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
RATINGS AND CHARACTERISTIC CURVES SS12 THRU SS110
1.0
0.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.6
0.4
SS12-SS16
SS18-SS110
0.2
0
0
25
50
75
100
125
150
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
24
18
12
6
175
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
AMBIENT TEMPERATURE, C
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD
CURRENT,AMPERES
TJ=25 C
10.0
1
SS12-SS14
SS15-SS16
SS18-SS110
0.1
100
10
TJ=100 C
1
TJ=75 C
0.1
0.01
TJ=25 C
0.001
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
0
20
40
60
80
400
TJ=25 C
20
SS12-SS14
SS15-SS110
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
2
0.1
1.0
10
100
PERCENT OF PEAK REVERSE VOLTAGE,%
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
200
100
NUMBER OF CYCLES AT 60 Hz
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
2
100