BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications DATASHEET | SEPTEMBER 2012 SPACE PHOTOVOLTAICS 28% Minimum Average Efficiency Features & Characteristics Highest efficiency flight cell with monolithic diode in the market Triple-Junction with Monolithic Diode (BTJM) InGaP/InGaAs/Ge Solar Cells with n-on-p Polarity on 140-µm Uniform Thickness Substrate Fully space-qualified InGaAs monolithic diode protection in production at Emcore since 2007 Typical Performance Data Electrical Parameters @ AM0 (135.3 mW/cm2) 28˚C BOL Efficiency at Maximum Power Point 28.0% Voc 2.69V Jsc 17.0 mA/cm2 Vmp 2.33V Jmp 16.3 mA/cm7 Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence Lowest solar cell mass of 84 mg/cm2 Good mechanical strength for reduced attrition during assembly and laydown Weldable or Solderable contacts Standard and custom sizes available BTJM Cell Structure Solar Cell Monolithic Diode p/n p/n – InGaAs InGaAs Typical BTJM Illuminated I-V Plot Solar Cell Area = 26.6 cm2 Copyright © 2008 Emcore| REV Corporation © 2012 EMCORE Corporation 2012.09 505 332 5000 505-332-5000 505 332 5100 505-332-5100 [email protected] [email protected] www.emcore.com www.emcore.com Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice. BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications DATASHEET | SEPTEMBER 2012 SPACE PHOTOVOLTAICS Radiation Performance at 1 MeV Electron Irradiation, EOL/BOL Ratios Typical Performance Data Monolithic Diode Electrical Performance VRB <2.0 V @ IRB 500 mA, 28˚ IRB <50 µA @ VRB 2.5V (Dark), 28˚C IRB <200 µA @ VRB 2.5V (Illuminated), 28˚C IRB <10 µA @ VRB 2.5V (Dark), –150˚C IRB <1 µA @ VRB 2.5V (Dark), +120˚C Fluence (e/cm2) Voc Isc Vmp Imp Pmp Efficiency 5E 13 0.96 1.00 0.97 1.00 0.97 0.97 1E 14 0.95 1.00 0.96 1.00 0.95 0.96 5E 14 0.91 0.97 0.92 0.96 0.89 0.89 1E 15 0.90 0.95 0.90 0.93 0.84 0.84 Temperature Coefficients Key Space Qualification Results Test Performed Industry Quality Standard Typical Test Results Fluence (e/cm2) Voc (mV/˚C) Jsc (1) (µA/˚Ccm2) Vm (mV/˚C) Jmp(2) (µA/˚Ccm2) Metal Contact Thickness 4-8 µm 6 µm BOL -5.9 +5 -5.9 +3 Dark Current degradation after reverse bias ∆ Ispec <2% Electrical performance after 2,000 thermal cycles -180°C to +95°C <2% <0.4% 5E 13 -6.0 +6 -6.3 +4 <0.8% 1E 14 -6.2 +6 -6.2 +4 5E 14 -6.2 +7 -6.4 High-Temperature Anneal at 200°C for >5,000 hrs. <2% No measurable difference +6 1E 15 -6.3 +9 -6.5 +8 Contact pull strength >300 grams >1000 grams Electrical performance degradation after 40 day humidity exposure at 60°C and 95% relative humidity <1.5% <0.4% (1) Jsc is the symbol for normalized Isc (2) Jmp is the symbol for normalized Imp About EMCORE Corporation EMCORE Photovoltaics Albuquerque, NM Incorporated in 1984 Appx. 900 Employees Nasdaq: EMKR Regulatory EMCORE CORPORATION ISO 9001 CERTIFIED Copyright © 2008 Emcore| REV Corporation © 2012 EMCORE Corporation 2012.09 505 332 5000 505-332-5000 505 332 5100 505-332-5100 EMCORE PHOTOVOLTAICS AS9100 CERTIFIED [email protected] [email protected] www.emcore.com www.emcore.com Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice.