G1033-202, 2.5G 1310 nm DFB Laser Chip DATASHEET | SEPTEMBER 2015 EMCORE’s G1033-202, 2.5G 1310 nm Distributed Feedback (DFB) laser diode chip is designed for digital uncooled applications. Applications • Uncooled PON Applications • FTTx Networks FIBER OPTICS Performance Highlights Parameter Features • Advanced Digital Chip Design • Wide Operating Temperature Range: -25 to +85°C • Telcordia Technologies™ 468 Compliant • RoHS Compliant Wavelength Operating Temperature Range Optical Output Power Side Mode Suppression Ratio (SMSR) Min Typical Max Units 1290 1310 1330 nm -25 +25 +85 °C - - 30 mW 30 40 - dB Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated for extended periods of time may effect device reliability. Parameter Symbol Min Max -25 +85 °C -40 +100 °C Continuous - 30 mW Vr Continuous - 1 V Iop Continuous - 120 mA - - - 500 V Operating Temperature Range Top Storage Temperature Range TSTG Optical Output Power Po Laser Reverse Voltage Continuous Operating Current 1 ESD Susceptibility Condition Continuous Unit 1 Based on human-body model of R = 1500 Ohm and C = 100 pF. In general, ESD precautions should be taken to avoid damage to the device | REV 2015.09 Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice. G1033-202, 2.5G 1310 nm DFB Laser Chip FIBER OPTICS DATASHEET | SEPTEMBER 2015 Chip Electrical/Optical Performance Characteristics Parameter Symbol Condition Min Typ Max Unit Top - -25 +25 +85 °C Optical Output Power Iop +25°C, lth+20mA +85°C, lth+20mA 6.5 4.5 9 6.5 - mW Threshold Current ITH +25°C +85°C - 10 26 15 33 mA Slope Efficiency QE +25°C +85°C 0.30 0.20 0.42 0.31 - mW/mA VOP - - 1.3 1.6 V λ -20°C to +85°C 1290 1310 1330 nm SMSR DC bias 30 40 - dB Operating Temperature Operating Voltage Central Wavelength 1 Side Mode Suppression Ratio Beam Divergence Angle, Vertical - Full Width, Half Max 30 36 42 deg Beam Divergence Angle, Horizontal - Full Width, Half Max 18 24 30 deg Laser Reverse Voltage Vr - 1 - - V Spectral Width Modulation bandwidth 2 Rise/Fall time Δλ Lth+20mA - - 1 nm f3dB Lth+20mA 5 - - GHz tr / tf 20/80% - - 150 ps 1 Unless otherwise specified 2 The bandwidth measurement based on DC and AC bias using bias-tee. The submount with a 42-ohm resistor was subjected to the RF power of 5dBm Outline Drawing Figure 1: Drawing of 2.5G uncooled DFB laser diode chip | REV 2015.09 Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice. G1033-202, 2.5G 1310 nm DFB Laser Chip DATASHEET | SEPTEMBER 2015 FIBER OPTICS Ordering Information Part Number: G1033-202 Laser Safety This product meets the appropriate standard in Title 21 of the Code of Federal Regulations (CFR). FDA/CDRH Class 1M laser product. This device has been classified with the FDA/CDRH under accession number 0220309. All Versions of this laser are Class 1M laser product, tested according to IEC 60825-1:2007/EN 60825-1:2007 Single-mode fiber pigtail with SC/APC connectors (standard). Wavelength = 1.5 μm. Maximum power = 30 mW. Because of size constraints, laser safety labeling (including an FDA class 1M label) is not affixed to the module, but attached to the outside of the shipping carton. Product is not shipped with power supply. Caution: Use of controls, adjustments and procedures other than those specified herein may result in hazardous laser radiation exposure. | REV 2015.09 Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.